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High Yield Assembly And Electron Transport Investigation Of Semiconducting-Rich Local-Gated Single-Walled Carbon Nanotube Field Effect Transistors
Authors
Saiful I. Khondaker
Kristy J. Kormondy
Paul Stokes
Publication date
14 October 2011
Publisher
'Information Bulletin on Variable Stars (IBVS)'
Abstract
We report the fabrication and electron transport investigation of individual local-gated single-walled carbon nanotube field effect transistors (SWNT-FET) with high yield using a semiconducting-rich carbon nanotube solution. The individual semiconducting nanotubes were assembled at the selected position of the circuit via dielectrophoresis. Detailed electron transport investigations on 70 devices show that 99% display good FET behavior, with an average threshold voltage of 1V, subthreshold swing as low as 140mV/dec, and on/off current ratio as high as 8 × 105. The high yield directed assembly of local-gated SWNT-FET will facilitate large scale fabrication of CMOS (complementary metal-oxide-semiconductor) compatible nanoelectronic devices. © IOP Publishing Ltd
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Last time updated on 18/10/2022