Progress on single barrier varactors for submillimeter wave power generation

Theoretical work on Single Barrier Varactor (SBV) diodes, indicate that the efficiency for a multiplier has a maximum for a considerably smaller capacitance variation than previously thought. The theoretical calculations are performed, both with a simple theoretical model and a complete computer simulation using the method of harmonic balance. Modeling of the SBV is carried out in two steps. First, the semiconductor transport equations are solved simultaneously using a finite difference scheme in one dimension. Secondly, the calculated I-V, and C-V characteristics are input to a multiplier simulator which calculates the optimum impedances, and output powers at the frequencies of interest. Multiple barrier varactors can also be modeled in this way. Several examples on how to design the semiconductor layers to obtain certain characteristics are given. The calculated conversion efficiencies of the modeled structures, in a multiplier circuit, are also presented. Computer simulations for a case study of a 750 GHz multiplier show that InAs diodes perform favorably compared to GaAs diodes. InAs and InGaAs SBV diodes have been fabricated and their current vs. voltage characteristics are presented. In the InAs diode, was the large bandgap semiconductor AlSb used as barrier. The InGaAs diode was grown lattice matched to an InP substrate with InAlAs as a barrier material. The current density is greatly reduced for these two material combinations, compared to that of GaAs/AlGaAs SBV diodes. GaAs based diodes can be biased to higher voltages than InAs diodes

A Distributed Heterostructure Barrier Varactor Frequency Tripler

We present a broadband nonlinear transmission line (NLTL) frequency multiplier at F-band. The multiplier consists of a finline section periodically loaded with 15 heterostructure barrier varactor (HBV) diodes. Tapered slot antennas are used to couple the fundamental signal from a WR-22 rectangular waveguide to the distributed multiplier as well as radiate the output power into free space. The frequency tripler exhibits 10-dBm peak radiated power at 130.5 GHz with more than 10% 3-dB bandwidth and 7% conversion efficiency. The tripler can be used as an inexpensive broad-band solid-state source for millimeter-wave applications

Heterostructure-Barrier-Varactor Design

In this paper, we propose a simple set of accurate frequency-domain design equations for calculation of optimum embedding impedances, optimum input power, bandwidth, and conversion efficiency of heterostructure-barrier-varactor (HBV) frequency triplers. A set of modeling equations for harmonic balance simulations of HBV multipliers are also given. A 141-GHz quasi-optical HBV tripler was designed using the method and experimental results show good agreement with the predicted results

Effects of Self-Heating on Planar Heterostructure Barrier Varactor Diodes

The conversion efficiency for planar Al0.7GaAs-GaAs heterostructure barrier varactor triplers is shown to be reduced from a theoretical efficiency of 10% to 3% due to self-heating. The reduction is in accordance with measurements on planar Al0.7GaAs-GaAs heterostructure barrier varactor (HBV) triplers to 261 GHz at room temperature and with low temperature tripler measurements to 255 GHz. The delivered maximum output power at 261 GHz is 2.0 mW. Future HBV designs should carefully consider and reduce the device thermal resistance and parasitic series resistance. Optimization of the RF circuit for a 10 ?m diameter device yielded a delivered output power of 3.6 mW (2.5% conversion efficiency) at 234 GH

Do we really need ferroelectrics in paraelectric phase only in electrically controlled microwave devices?

Typical paraelectric materials (e.g., SrTiO3, KTaO3, BaxSr1-xTiO3, x<0.5) and electrically tunable microwave devices based on these materials are briefly reviewed. The analysis shows that in spite of the recent year's extensive efforts, no considerable improvement in the microwave losses in thin paraelectric films has been achieved. Thin films, regardless of fabrication method and substrate type, have much lower dielectric permittivity than bulk single crystals, and the loss tangent at microwave frequencies (f>10 GHz) is of the order of 0.01 (at zero dc-bias field) at room temperature. Nevertheless, quite promising component and subsystem level devices are successfully demonstrated. Use of ceramic (bulk and thick film) ferroelectrics in tunable microwave devices, currently considered for industrial applications, offer cost reduction. In this paper, explicitly for the first time, we consider possibilities and benefits of using ferroelectrics in polar phase in electrically controllable microwave devices. Examples of using ferroelectrics in polar state (e.g., Na0.5K0.5NbO3, SrTiO3 in antiferroelectric phase) in electrically tunable devices are reporte

Quantum-Noise Theory for Terahertz Hot Electron Bolometer Mixers

Abstract— In this paper we first review general quantum mechanical limits on the sensitivity of heterodyne receivers. The main aim of the paper is to explore the quantum noise properties of Hot Electron Bolometric (HEB) mixers. HEB mixers have a characteristic feature not found in other mixers: based on the “hot-spot” model, the conversion loss varies along the length dimension of the bolometer, and some sections of the bolometer are essentially passive, in which little frequency conversion occurs. We analyze a quantitative distributed quantum noise model of the HEB mixer, making use of simulated hot spot model data, that takes into account the continuous variation of the sensitivity along the bolometer bridge. An expression for the HEB receiver noise temperature, including optical input loss, is derived. We find that the predicted DSB receiver noise temperature agrees well with the available measured data (up to 5.3 THz). The results of our analysis suggest that quantum noise and classical HEB noise contribute about equally at 3 THz while at higher terahertz frequencies quantum noise dominates. Quantum noise thus appears to show measurable effects in existing HEB mixers, and will be even more important to take into account as HEB mixers continue to be developed for higher terahertz frequencies

CAD Models for Shielded Multilayered CPW

Conformal mapping technique is used to obtain CAD oriented closed form analytical expressions for characteristic impedance per unit length capacitance and relative effective dielectric permittivity of top and bottom shielded multilayered coplanar waveguides (CPW). Analytical expressions are deduced for a wide verity of CPW structure

Millimeter-and submillimeter-wave multipliers using quantum-barrier-varactor (QBV) diodes

Experimental results are presented using quantum-barrier-varactor (QBV) diodes in harmonic multipliers. Output powers and tripler conversion efficiencies of more than 2 mW and 5%, respectively, were achieved between 210 and 280 GHz. In a crude experiment, an efficiency of more than 0.2% for the fifth harmonic was measured at 310 GHz. The values for the QBV diode as a tripler are comparable to state-of-the-art results for Schottky-varactor diode triplers. The experimental results agree well with theoretical calculation

Analysis of Symmetric Varactor Frequency Multipliers

We investigate efficiency limitations of frequency multipliers with the use of a simple model for symmetric varactors. Our calculations show that the conversion efficiency is improved for a C(V) shape with large nonlinearity at zero volt bias. For quintuplers, the optimal embedding impedance at the third harmonic is an inductance in resonance with the varactor diode capacitance