Neutron dosimetry with planar silicon p-i-n diodes

New nonionizing energy losses (NIEL) sensors based on silicon planar p-i-n diodes of different geometry have been investigated and their response to fast neutron field compared with bulk diodes. The possibility of obtaining a wide range of sensitivities in these NIEL sensors simultaneously with measurements of IEL has been demonstrated

Activation energy of technological thermodonors in transmutation doped gamma irradiated N-Si(P)

Temperature dependence of Hall coefficient in neutron transmutation doped (NTD) n-Si(P) crystals was measured and the activation energies of high temperature technological thermodonors were determined. Tensoeffect mechanisms in high uniaxially strained NTD y-irradiated n-Si(P) were examined in order to explain the behaviors of the experimental dependencies

Radiation defects in neutron irradiated silicon with high oxygen concentration

Abstract In silicon material with oxygen concentration in the range (4–9)×10 17 cm −3 , grown by the CZ method and irradiated by reactor neutrons, the interstitial oxygen mainly participates in A-center (V+O) creation. A-center concentration is linearly dependent on neutron fluence up to Φ =10 18 n/cm 2 , value at which saturation occurs caused not by the exhaustion of dissolved oxygen but rather by vacancy-interstitial atom annihilation competitive mechanisms. A-center annealing ( T >300°C) does not lead to the full restoring of interstitial oxygen concentration. Repeating neutron irradiation and annealing causes a decrease of oxygen complex activity and the silicon behaves as a low-oxygen material