10,334 research outputs found
Local pressure-induced metallization of a semiconducting carbon nanotube in a crossed junction
The electronic and vibrational density of states of a semiconducting carbon
nanotube in a crossed junction was investigated by elastic and inelastic
scanning tunneling spectroscopy. The strong radial compression of the nanotube
at the junction induces local metallization spatially confined to a few nm. The
local electronic modifications are correlated with the observed changes in the
radial breathing and G-band phonon modes, which react very sensitively to local
mechanical deformation. In addition, the experiments reveal the crucial
contribution of the image charges to the contact potential at nanotube-metal
interfaces
Intercalation of graphene on SiC(0001) via ion-implantation
Electronic devices based on graphene technology are catching on rapidly and
the ability to engineer graphene properties at the nanoscale is becoming, more
than ever, indispensable. Here, we present a new procedure of graphene
functionalization on SiC(0001) that paves the way towards the fabrication of
complex graphene electronic chips. The procedure resides on the well-known
ion-implantation technique. The efficiency of the working principle is
demonstrated by the intercalation of the epitaxial graphene layer on SiC(0001)
with Bi atoms, which was not possible following standard procedures. Our
results put forward the ion-beam lithography to nanostructure and functionalize
desired graphene chips
Kondo effect of Co adatoms on Ag monolayers on noble metal surfaces
The Kondo temperature of single Co adatoms on monolayers of Ag on Cu
and Au(111) is determined using Scanning Tunneling Spectroscopy. of Co on
a single monolayer of Ag on either substrate is essentially the same as that of
Co on a homogenous Ag(111) crystal. This gives strong evidence that the
interaction of surface Kondo impurities with the substrate is very local in
nature. By comparing found for Co on Cu, Ag, and Au (111)-surfaces we
show that the energy scale of the many-electron Kondo state is insensitive to
the properties of surface states and to the energetic position of the projected
bulk band edges.Comment: 4 pages, 3 figure
Controlling quantum systems by embedded dynamical decoupling schemes
A dynamical decoupling method is presented which is based on embedding a
deterministic decoupling scheme into a stochastic one. This way it is possible
to combine the advantages of both methods and to increase the suppression of
undesired perturbations of quantum systems significantly even for long
interaction times. As a first application the stabilization of a quantum memory
is discussed which is perturbed by one-and two-qubit interactions
Quantum Coherence of Image-Potential States
The quantum dynamics of the two-dimensional image-potential states in front
of the Cu(100) surface is measured by scanning tunneling microscopy (STM) and
spectroscopy (STS). The dispersion relation and the momentum resolved
phase-relaxation time of the first image-potential state are determined from
the quantum interference patterns in the local density of states (LDOS) at step
edges. It is demonstrated that the tip-induced Stark shift does not affect the
motion of the electrons parallel to the surface.Comment: Submitted to Phys. Rev. Lett., 4 pages, 4 figures; corrected typos,
minor change
Origin of Rashba-splitting in the quantized subbands at Bi2Se3 surface
We study the band structure of the topological
insulator (111) surface using angle-resolved photoemission spectroscopy. We
examine the situation where two sets of quantized subbands exhibiting different
Rashba spin-splitting are created via bending of the conduction (CB) and the
valence (VB) bands at the surface. While the CB subbands are strongly Rashba
spin-split, the VB subbands do not exhibit clear spin-splitting. We find that
CB and VB experience similar band bending magnitudes, which means, a
spin-splitting discrepancy due to different surface potential gradients can be
excluded. On the other hand, by comparing the experimental band structure to
first principles LMTO band structure calculations, we find that the strongly
spin-orbit coupled Bi 6 orbitals dominate the orbital character of CB,
whereas their admixture to VB is rather small. The spin-splitting discrepancy
is, therefore, traced back to the difference in spin-orbit coupling between CB
and VB in the respective subbands' regions
Ag-coverage-dependent symmetry of the electronic states of the Pt(111)-Ag-Bi interface: The ARPES view of a structural transition
We studied by angle-resolved photoelectron spectroscopy the strain-related
structural transition from a pseudomorphic monolayer (ML) to a striped
incommensurate phase in an Ag thin film grown on Pt(111). We exploited the
surfactant properties of Bi to grow ordered Pt(111)-xMLAg-Bi trilayers with 0 <
x < 5 ML, and monitored the dispersion of the Bi-derived interface states to
probe the structure of the underlying Ag film. We find that their symmetry
changes from threefold to sixfold and back to threefold in the Ag coverage
range studied. Together with previous scanning tunneling microscopy and
photoelectron diffraction data, these results provide a consistent microscopic
description of the coverage-dependent structural transition.Comment: 10 pages, 9 figure
Ultrafast photodoping and effective Fermi-Dirac distribution of the Dirac particles in Bi2Se3
We exploit time- and angle- resolved photoemission spectroscopy to determine
the evolution of the out-of-equilibrium electronic structure of the topological
insulator Bi2Se. The response of the Fermi-Dirac distribution to ultrashort IR
laser pulses has been studied by modelling the dynamics of the hot electrons
after optical excitation. We disentangle a large increase of the effective
temperature T* from a shift of the chemical potential mu*, which is consequence
of the ultrafast photodoping of the conduction band. The relaxation dynamics of
T* and mu* are k-independent and these two quantities uniquely define the
evolution of the excited charge population. We observe that the energy
dependence of the non-equilibrium charge population is solely determined by the
analytical form of the effective Fermi-Dirac distribution.Comment: 5 Pages, 3 Figure
Shuttle flight pressure instrumentation: Experience and lessons for the future
Flight data obtained from the Space Transportation System orbiter entries are processed and analyzed to assess the accuracy and performance of the Development Flight Instrumentation (DFI) pressure measurement system. Selected pressure measurements are compared with available wind tunnel and computational data and are further used to perform air data analyses using the Shuttle Entry Air Data System (SEADS) computation technique. The results are compared to air data from other sources. These comparisons isolate and demonstrate the effects of the various limitations of the DFI pressure measurement system. The effects of these limitations on orbiter performance analyses are addressed, and instrumentation modifications are recommended to improve the accuracy of similar fight data systems in the future
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