Pressure effects on the superconducting thin film Ba1−x_{1-x}Kx_{x}Fe2_{2}As2_{2}

We report electrical resistivity measurements on a high-quality Ba$_{1-x}$K$_{x}$Fe$_{2}$As$_{2}$ thin film ($x=0.4$) under pressure. The superconducting transition temperature (=39.95 K) of the optimally-doped thin film shows a dome shape with pressure, reaching a maximal value 40.8 K at 11.8 kbar. The unusually high superconducting transition temperature and its anomalous pressure dependence are ascribed to a lattice mismatch between the LaAlO$_3$ substrate and the thin film. The local temperature exponent of the resistivity ($n=d\text{ln}\Delta\rho/d\text{ln}T$) shows a funnel shape around the optimal pressure, suggesting that fluctuations associated with the anomalous normal state are responsible for high-temperature superconductivity.Comment: To appear in Appl. Phys. Let

Singlet Fermionic Dark Matter with Dark ZZ

We present a fermionic dark matter model mediated by the hidden gauge boson. We assume the QED-like hidden sector which consists of a Dirac fermion and U(1)$_X$ gauge symmetry, and introduce an additional scalar electroweak doublet field with the U(1)$_X$ charge as a mediator. The hidden U(1)$_X$ symmetry is spontaneously broken by the electroweak symmetry breaking and there exists a massive extra neutral gauge boson in this model which is the mediator between the hidden and visible sectors. Due to the U(1)$_X$ charge, the additional scalar doublet does not couple to the Standard Model fermions, which leads to the Higgs sector of type I two Higgs doublet model. The new gauge boson couples to the Standard Model fermions with couplings proportional to those of the ordinary $Z$ boson but very suppressed, thus we call it the dark $Z$ boson. We study the phenomenology of the dark $Z$ boson and the Higgs sector, and show the hidden fermion can be the dark matter candidate.Comment: 10 pages, 3 figure

Potassium-doped BaFe2As2 superconducting thin films with a transition temperature of 40 K

We report the growth of potassium-doped BaFe2As2 thin films, where the major charge carriers are holes, on Al2O3 (0001) and LaAlO3 (001) substrates by using an ex-situ pulsed laser deposition technique. The measured Tc's are 40 and 39 K for the films grown on Al2O3 and LaAlO3, respectively and diamagnetism indicates that the films have good bulk superconducting properties below 36 and 30 K, respectively. The X-ray diffraction patterns for both films indicated a preferred c-axis orientation, regardless of the substrate structures of LaAlO3 and Al2O3. The upper critical field at zero temperature was estimated to be about 155 T.Comment: 6 pages including 3 figure