The Effect of Doping on the Electrophysical Properties of Polycrystalline Diamond Films Deposited from an Abnormal Glow Discharge

The paper is focused on the study of the boron doping effect on the electrical characteristics, on the mechanism of charge carrier transfer, and on the energy spectrum of the localized defect states in the polycrystalline diamond films (PDF) deposited from an abnormal glow discharge. PDF doping enables to form the semiconductor layers of p-type conductivity, which have as good properties as those of PDF produced by the alternative methods. The doping reduces the degree of disorder in the film material brought by the growth defects, which determine the film electrical characteristics and electrotransfer mechanism. The PDF electrical characteristics and electrotransfer mechanism are determined by the defects of different nature, whose band gap energy levels have a continuous energy distribution. A p-type activation component is realized in the exchange of charge carriers between the valence band and shallow acceptor levels with the activation energy of 0.013-0.022 eV. Doping increases the effect of the hopping mechanism of the conductivity involving the localized states with a density of (1-6)•10{20} eV{-1}•cm{-3} distributed near the Fermi level, which is in the low half of the band gap

Ion-heat modification of inorganic dielectrics properties

The influence of an ions irradiation and subsequent annealing in vacuum on mechanical and electrophysical properties of irganic dielectrics examined. The opportunity of purposeful regulation of their surface resistivity in limits 10 ..10 Ohm per squ (П/П) is shown. The modes of modification ensuring deriving on a surface of dielectrics a thermostable resistive coatings are giv

Ion-heat modification of inorganic dielectrics properties

The influence of an ions irradiation and subsequent annealing in vacuum on mechanical and electrophysical properties of irganic dielectrics examined. The opportunity of purposeful regulation of their surface resistivity in limits 10 ..10 Ohm per squ (П/П) is shown. The modes of modification ensuring deriving on a surface of dielectrics a thermostable resistive coatings are giv

Optical properties of aluminum- and silicon-nitride films and Al–Si–N nanocomposite coatings deposited by reactive magnetron sputtering

Abstract: In this paper, we study the optical properties of aluminum- and silicon-nitride films and Al–Si–N coatings with variable atomic composition deposited by reactive magnetron sputtering on glass, silicon, and steel substrates. The absorption and luminescence characteristics are determined by the composition of the coatings and microstructure and depend on the physical properties of the substrate. The absorption and luminescence centers are associated with intrinsic defects in the nitrides and their simplest complexes. The relationships between the accumulation of growth defects, their interaction, the type of distribution of localized states, the band gap, and the stability of the optical properties are established. At an increase in the silicon content in the coatings, the degree of static induced disorder increases, and the contribution of the continuous distribution of the defect levels and interband absorption increases. Silicon-containing defects stabilize the optical properties of the coatings

Effect of short-pulsed ion irradiation on the optical and electrical properties of titanium nitride films deposited by reactive magnetron sputtering

The effect of short-pulsed irradiation with 220 keV carbon ions for fluences of 2.2 x 10(13) - 2.1 x 10(15) cm(-2 )on the optical and electrical properties of titanium nitride films deposited by reactive magnetron sputtering on silicon and steel substrates has been studied. Relationships are obtained between the irradiation conditions and the parameters of interband absorption. A relationship has been established between the concentration of defects before and after irradiation, the degree of overlap of their levels and changes in the optical and electrical properties of the films. Reasons of high radiation resistance of the films are discussed. The optical and electrical properties of the films change during irradiation in two stages. The first stage is related to the annihilation of defects, the second stage is associated with their accumulation. Irradiation of films significantly slows down the rate of oxidation of their surface layers and stabilizes the electrical properties