Fabrication and Characterization of ZnO Nanowire Arrays with an Investigation into Electrochemical Sensing Capabilities

ZnO nanowire arrays were grown on a Si (100) substrate using the vapor-liquid-solid (VLS) method. ZnO nanowires were characterized by XRD, SEM, bright field TEM, and EDS. They were found to have a preferential orientation along the c-axis. The as-prepared sample was functionalized with glucose oxidase by physical adsorption. FTIR was taken before and after functionalization to verify the presence of the attached enzyme. Electrochemical measurements were performed on the nanowire array by differential pulse voltammetry in the range of −0.6 to 0.4 V. The nanoarray sensor displayed high sensitivity to glucose in the range of 1.0 ×10−4 to 1.0 ×10−2 mol L−1

Development Of Cadmium Selenide As An Absorber Layer For Tandem Solar Cells

Cadmium Selenide is a binary compound. It has a band gap of 1.7 eV. This is one of the suitable materials for an absorber layer in the top cell of a tandem solar cell. CIGS with a low Gallium content has a band gap of 1 eV suits well as an absorber layer for the bottom cell. CIGS cells have already attained an efficiency of 15% [1,2]. Since years, research has been done in developing the bottom cell. The results of the bottom cell are promising. So the fabrication of an efficient top cell in a tandem solar cell is a challenge. To achieve a high tandem efficiency of above 25 %, the top cell has to contribute at least 2/3 of the total efficiency, which necessitates the top cell to have at least 16 to 18 % efficiency [3]. Development of a defect free absorber layer is a crucial step in this process to achieve the above goals besides optimizing other layers. Selenium vacancies in CdSe make the absorber layer n-type. CdSe is deposited by closed space sublimation. Deposition of CdSe at higher substrate temperatures in comparison to the standard conditions was studied. ZnSe acts as an insulating layer. It is thermally evaporated in an Evaporation system. Copper acts as a metal contact on top of the insulator resulting in a MIS structure. Copper is also deposited by Thermal Evaporation. Devices are fabricated on different substrates like SnO2: F, AZO etc. Fabricated cells are characterized by J-V and Spectral response measurements. Devices fabricated on SnO2: F substrates show typical open circuit voltages of around 220 mV, short circuit current densities of 10.02 mA/cm2 and fill factors around 33 %. N-type CdS when deposited on SnO2: F below the absorber layer further improved Voc\u27s to around 330 mV. Annealing of these devices improved Voc\u27s to about 350 mV but Jsc\u27s remained 7.21 mA/cm2

Growth and Characterization of Nanocrystalline Diamond Films for Microelectronics and Microelectromechanical Systems

Diamond is widely known for its extraordinary properties, such as high thermal conductivity, energy bandgap and high material hardness and durability making it a very attractive material for microelectronic and mechanical applications. Synthetic diamonds produced by chemical vapor deposition (CVD) methods retain most of the properties of natural diamond. Within this class of material, nanocrystalline diamond (NCD) is being developed for microelectronic and microelectromechanical systems (MEMS) applications. During this research, intrinsic and doped NCD films were grown by the microwave plasma enhanced chemical vapor deposition (MPECVD) method using CH4/Ar/H2 gas mixture and CH4/Ar/N2 gas chemistries respectively. The first part of research focused on the growth and characterization of NCD films while the second part on the application of NCD as a structural material in MEMS device fabrication. The growth processes were optimized by evaluating the structural, mechanical and electrical properties. The nature of chemical bonding, namely the ratio of sp²:sp³ carbon content was estimated by Raman spectroscopy and near edge x-ray absorption fine structure (NEXAFS) techniques. The micro-structural properties were studied by x-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The mechanical properties of the pure NCD films were evaluated by nano-indentation. The electrical properties of the conductive films were studied by forming ohmic as well as schottky contacts. In second part of this study, both free-standing and membrane capped field emitter devices were fabricated by a silicon mold technique using nitrogen incorporated (i.e., doped) NCD films. The capped field emission devices act as a prototype vacuum microelectronic sensor. The field emission tests of both devices were conducted using a diode electrical device model. The turn-on field and the emission current of free-standing emitter devices was found to be approximately 0.8 V/µm and 20 µA, respectively, while the turn-on fields of capped devices increased by an order of magnitude. The emission current in the field emission sensor changed from 1 µA to 25 µA as the membrane was deflected from 280 µm to 50 µm from the emission tip, respectively

Fabrication and Characterization of ZnO Nanowire Arrays with an Investigation into Electrochemical Sensing Capabilities

ZnO nanowire arrays were grown on a Si (100) substrate using the vapor-liquid-solid (VLS) method. ZnO nanowires were characterized by XRD, SEM, bright field TEM, and EDS. They were found to have a preferential orientation along the -axis. The as-prepared sample was functionalized with glucose oxidase by physical adsorption. FTIR was taken before and after functionalization to verify the presence of the attached enzyme. Electrochemical measurements were performed on the nanowire array by differential pulse voltammetry in the range of -0.6 to 0.4 V. The nanoarray sensor displayed high sensitivity to glucose in the range of 1.0 x 10-4 to 1.0 x 10-2  mol L-1

Fabrication and Characterization of ZnO Nanowire Arrays with an Investigation into Electrochemical Sensing Capabilities

ZnO nanowire arrays were grown on a Si (100) substrate using the vapor-liquid-solid (VLS) method. ZnO nanowires were characterized by XRD, SEM, bright field TEM, and EDS. They were found to have a preferential orientation along the -axis. The as-prepared sample was functionalized with glucose oxidase by physical adsorption. FTIR was taken before and after functionalization to verify the presence of the attached enzyme. Electrochemical measurements were performed on the nanowire array by differential pulse voltammetry in the range of -0.6 to 0.4 V. The nanoarray sensor displayed high sensitivity to glucose in the range of 1.0 x 10-4 to 1.0 x 10-2  mol L-1

Integration of ZnO nanowires with nanocrystalline diamond fibers

Provided herein is a method for the synthesis and the integration of ZnO nanowires and nanocrystalline diamond as a novel hybrid material useful in next generation MEMS/NEMS devices. As diamond can provide a highly stable surface for applications in the harsh environments, realization of such hybrid structures may prove to be very fruitful. The ZnO nanowires on NCD were synthesized by thermal evaporation technique