44 research outputs found
Fluorescence Manipulation by Gold Nanoparticles: From Complete Quenching to Extensive Enhancement
<p>Abstract</p> <p>Background</p> <p>When a fluorophore is placed in the vicinity of a metal nanoparticle possessing a strong plasmon field, its fluorescence emission may change extensively. Our study is to better understand this phenomenon and predict the extent of quenching and/or enhancement of fluorescence, to beneficially utilize it in molecular sensing/imaging.</p> <p>Results</p> <p>Plasmon field intensities on/around gold nanoparticles (GNPs) with various diameters were theoretically computed with respect to the distance from the GNP surface. The field intensity decreased rapidly with the distance from the surface and the rate of decrease was greater for the particle with a smaller diameter. Using the plasmon field strength obtained, the level of fluorescence alternation by the field was theoretically estimated. For experimental studies, 10 nm GNPs were coated with polymer layer(s) of known thicknesses. Cypate, a near infrared fluorophore, was placed on the outermost layer of the polymer coated GNPs, artificially separated from the GNP at known distances, and its fluorescence levels were observed. The fluorescence of Cypate on the particle surface was quenched almost completely and, at approximately 5 nm from the surface, it was enhanced ~17 times. The level decreased thereafter. Theoretically computed fluorescence levels of the Cypate placed at various distances from a 10 nm GNP were compared with the experimental data. The trend of the resulting fluorescence was similar. The experimental results, however, showed greater enhancement than the theoretical estimates, in general. The distance from the GNP surface that showed the maximum enhancement in the experiment was greater than the one theoretically predicted, probably due to the difference in the two systems.</p> <p>Conclusions</p> <p>Factors affecting the fluorescence of a fluorophore placed near a GNP are the GNP size, coating material on GNP, wavelengths of the incident light and emitted light and intrinsic quantum yield of the fluorophore. Experimentally, we were able to quench and enhance the fluorescence of Cypate, by changing the distance between the fluorophore and GNP. This ability of artificially controlling fluorescence can be beneficially used in developing contrast agents for highly sensitive and specific optical sensing and imaging.</p
In Vivo Processing of Ceria Nanoparticles inside Liver: Impact on Free-Radical Scavenging Activity and Oxidative Stress
The cytotoxicity of ceria ultimately lies in its electronic structure, which is defined by the crystal structure, composition, and size. Despite previous studies focused on ceria uptake, distribution, biopersistance, and cellular effects, little is known about its chemical and structural stability and solubility once sequestered inside the liver. Mechanisms will be presented that elucidate the in vivo transformation in the liver. In vivo processed ceria reveals a particle-size effect towards the formation of ultrafines, which represent a second generation of ceria. A measurable change in the valence reduction of the second-generation ceria can be linked to an increased free-radical scavenging potential. The in vivo processing of the ceria nanoparticles in the liver occurs in temporal relation to the brain cellular and protein clearance responses that stem from the ceria uptake. This information is critical to establish a possible link between cellular processes and the observed in vivo transformation of ceria. The temporal linkage between the reversal of the pro-oxidant effect (brain) and ceria transformation (liver) suggests a cause-effect relationship
Electroplating of CdTe thin films from cadmium sulphate precursor and comparison of layers grown by 3-electrode and 2-electrode systems
Electrodeposition of CdTe thin films was carried out from the late 1970s using the
cadmium sulphate precursor. The solar energy group at Sheffield Hallam University has carried out
a comprehensive study of CdTe thin films electroplated using cadmium sulfate, cadmium nitrate and
cadmium chloride precursors, in order to select the best electrolyte. Some of these results have been
published elsewhere, and this manuscript presents the summary of the results obtained on CdTe layers
grown from cadmium sulphate precursor. In addition, this research program has been exploring the
ways of eliminating the reference electrode, since this is a possible source of detrimental impurities,
such as K+ and Ag+ for CdS/CdTe solar cells. This paper compares the results obtained from CdTe
layers grown by three-electrode (3E) and two-electrode (2E) systems for their material properties and
performance in CdS/CdTe devices. Thin films were characterized using a wide range of analytical
techniques for their structural, morphological, optical and electrical properties. These layers have
also been used in device structures; glass/FTO/CdS/CdTe/Au and CdTe from both methods have
produced solar cells to date with efficiencies in the region of 5%ā13%. Comprehensive work carried
out to date produced comparable and superior devices fabricated from materials grown using
2E system
ZnO ALD-Coated Microsphere-Based Sensors for Temperature Measurements
In this paper, the application of a microsphere-based fiber-optic sensor with a 200 nm zinc oxide (ZnO) coating, deposited by the Atomic Layer Deposition (ALD) method, for temperature measurements between 100 and 300 °C, is presented. The main advantage of integrating a fiber-optic microsphere with a sensing device is the possibility of monitoring the integrity of the sensor head in real-time, which allows for higher accuracy during measurements. The study has demonstrated that ZnO ALD-coated microsphere-based sensors can be successfully used for temperature measurements. The sensitivity of the tested device was found to be 103.5 nW/°C when the sensor was coupled with a light source of 1300 nm central wavelength. The measured coefficient R2 of the sensor head was over 0.99, indicating a good fit of the theoretical linear model to the measured experimental data
Synthesis and catalytic properties of mesoporous, bifunctional, gallium-niobium mixed oxides
Thermally stable mesoporous GaāNb mixed oxides, active in both acid-catalysed and redox reactions have been synthesized via self-assembly hydrothermal assisted approach. Methyl oleate, a major component of biodiesels, undergoes double bond and skeletal isomerisation as well as dehydrogenation over these novel mesophases
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Dislocation core in GaN
Light emitting diodes and blue laser diodes grown on GaN have been demonstrated despite six orders of magnitude higher dislocation density than that for III-V arsenide and phosphide diodes. Understanding and determination of dislocation cores in GaN is crucial since both theoretical and experimental work are somewhat contradictory. Transmission Electron Microscopy (TEM) has been applied to study the layers grown by hydride vapor-phase epitaxy (HVPE) and molecular beam epitaxy (MBE) (under Ga rich conditions) in plan-view and cross-section samples. This study suggests that despite the fact that voids are formed along the dislocation line in HVPE material, the dislocations have closed cores. Similar results of closed core are obtained for the screw dislocation in the MBE material, confirming earlier studies
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Screw dislocations in GaN
GaN has received much attention over the past few years because of several new applications, including light emitting diodes, blue laser diodes and high-power microwave transistors. One of the biggest problems is a high density of structural defects, mostly dislocations, due to a lack of a suitable lattice-matched substrate since bulk GaN is difficult to grow in large sizes. Transmission Electron Microscopy (TEM) has been applied to study defects in plan-view and cross-sections on samples prepared by conventional techniques such as mechanical thinning and precision ion milling. The density of dislocations close to the sample surface of a 1 mm-thick HVPE sample was in the range of 3x109 cm-2. All three types of dislocations were present in these samples, and almost 50 percent were screw dislocations. Our studies suggest that the core structure of screw dislocations in the same material might differ when the material is grown by different methods
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Dislocation core in GaN
Light emitting diodes and blue laser diodes grown on GaN have been demonstrated despite six orders of magnitude higher dislocation density than that for III-V arsenide and phosphide diodes. Understanding and determination of dislocation cores in GaN is crucial since both theoretical and experimental work are somewhat contradictory. Transmission Electron Microscopy (TEM) has been applied to study the layers grown by hydride vapor-phase epitaxy (HVPE) and molecular beam epitaxy (MBE) (under Ga rich conditions) in plan-view and cross-section samples. This study suggests that despite the fact that voids are formed along the dislocation line in HVPE material, the dislocations have closed cores. Similar results of closed core are obtained for the screw dislocation in the MBE material, confirming earlier studies