Sparticle Spectrum of Large Volume Compactification

We examine the large volume compactification of Type IIB string theory or its F theory limit and the associated supersymmetry breakdown and soft terms. It is crucial to incorporate the loop-induced moduli mixing, originating from radiative corrections to the Kahler potential. We show that in the presence of moduli mixing, soft scalar masses generically receive a D-term contribution of the order of the gravitino mass m_{3/2} when the visible sector cycle is stabilized by the D-term potential of an anomalous U(1) gauge symmetry, while the moduli-mediated gaugino masses and A-parameters tend to be of the order of m_{3/2}/8pi^2. It is noticed also that a too large moduli mixing can destabilize the large volume solution by making it a saddle point.Comment: 29 page

On the Effective Description of Large Volume Compactifications

We study the reliability of the Two-Step moduli stabilization in the type-IIB Large Volume Scenarios with matter and gauge interactions. The general analysis is based on a family of N=1 Supergravity models with a factorizable Kaehler invariant function, where the decoupling between two sets of fields without a mass hierarchy is easily understood. For the Large Volume Scenario particular analyses are performed for explicit models, one of such developed for the first time here, finding that the simplified version, where the Dilaton and Complex structure moduli are regarded as frozen by a previous stabilization, is a reliable supersymmetric description whenever the neglected fields stand at their leading F-flatness conditions and be neutral. The terms missed by the simplified approach are either suppressed by powers of the Calabi-Yau volume, or are higher order operators in the matter fields, and then irrelevant for the moduli stabilization rocedure. Although the power of the volume suppressing such corrections depends on the particular model, up to the mass level it is independent of the modular weight for the matter fields. This at least for the models studied here but we give arguments to expect the same in general. These claims are checked through numerical examples. We discuss how the factorizable models present a context where despite the lack of a hierarchy with the supersymmetry breaking scale, the effective theory still has a supersymmetric description. This can be understood from the fact that it is possible to find vanishing solution for the auxiliary components of the fields being integrated out, independently of the remaining dynamics. Our results settle down the question on the reliability of the way the Dilaton and Complex structure are treated in type-IIB compactifications with large compact manifold volumina.Comment: 23 pages + 2 appendices (38 pages total). v2: minor improvements, typos fixed. Version published in JHE

Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation

published_or_final_versio

Passivation of Oxide Traps and Interface States in GaAs Metal-Oxide-Semiconductor Capacitor by LaTaON Passivation Layer and Fluorine Incorporation

published_or_final_versio

Constraints on LVS Compactifications of IIB String Theory

We argue that once all theoretical and phenomenological constraints are imposed on the different versions of the Large Volume Scenario (LVS) compactifications of type IIB string theory, one particular version is favored. This is essentially a sequestered one in which the soft terms are generated by Weyl anomaly and RG running effects. We also show that arguments questioning sequestering in LVS models are not relevant in this case.Comment: 14 pages, additional discussion of D7 brane case and mSUGRA, reference adde

Low-voltage polymer thin-film transistors with high-k HfTiO gate dielectric annealed in NH3 or N2

OTFTs with P3HT as organic semiconductor and HfTiO as gate dielectric have been studied in this work. The HfTiO dielectric film was prepared by RF sputtering of Hf and DC sputtering of Ti at room temperature. Subsequently, the dielectric film was annealed in an NH3 or N2 ambient at 200 °C. Then a layer of OTS was deposited by spin-coating method to improve the surface characteristics of the gate dielectric. Afterwards, P3HT was deposited by spin-coating method. The OTFTs were characterized by I-V measurement and 1/f noise measurement. The OTFT with gate dielectric annealed in NH3 displays higher carrier mobility, smaller threshold voltage, smaller sub-threshold swing, and lower 1/f noise level than the OTFT annealed in N2. Moreover, the HfTiO dielectric film annealed in NH3 shows higher dielectric constant. In summary, HfTiO film annealed in NH 3 at low temperature is a promising candidate to act as the gate dielectric of high-quality low-voltage OTFTs. ©2009 IEEE.published_or_final_versionThe IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2009), Xi'an, China, 25-27 December 2009. In Proceedings of EDSSC, 2009, p. 201-20

Dark Radiation and Dark Matter in Large Volume Compactifications

We argue that dark radiation is naturally generated from the decay of the overall volume modulus in the LARGE volume scenario. We consider both sequestered and non-sequestered cases, and find that the axionic superpartner of the modulus is produced by the modulus decay and it can account for the dark radiation suggested by observations, while the modulus decay through the Giudice-Masiero term gives the dominant contribution to the total decay rate. In the sequestered case, the lightest supersymmetric particles produced by the modulus decay can naturally account for the observed dark matter density. In the non-sequestered case, on the other hand, the supersymmetric particles are not produced by the modulus decay, since the soft masses are of order the heavy gravitino mass. The QCD axion will then be a plausible dark matter candidate.Comment: 27 pages, 4 figures; version 3: version published in JHE

Effects of annealing temperature and gas on pentacene OTFTs with HfLaO as gate dielectric

Pentacene organic thin-film transistors (OTFTs) with high-κ HfLaO as gate insulator were fabricated. HfLaO film was prepared by sputtering method. To improve the film quality, the dielectric was annealed in N 2, NH 3, or O 2 at two temperatures, i.e., 200 °C and 400 °C, respectively. The I-V characteristics of the OTFTs and C-V characteristics of corresponding organic capacitors were measured. The OTFTs could operate at a low operating voltage of below 5 V, and the dielectric constant of the HfLaO film could be above ten. For all the annealing gases, the OTFTs annealed at 400 °C achieved higher carrier mobility than their counterparts annealed at 200 °C (with the one annealed in NH 3 at 400 °C showing the highest carrier mobility of 0.45 cm 2/ V·s), which could be supported by SEM images which indicate that pentacene tended to form larger grains on HfLaO annealed at 400 °C than on that annealed at 200 °C. The C-V measurement of the organic capacitors indicated that the localized charge density in the organic semiconductor/oxide was lower for the 400 °C annealing than for the 200 °C annealing. Furthermore, through the characterization of gate current leakage, HfLaO film annealed at 400 °C achieved much smaller leakage than that annealed at 200 °C. Since the maximum processing temperature of ITO glass substrates is around 400 °C , this study shows that 400 °C is suitable for the annealing of HfLaO film in high-performance OTFTs on glass substrate. © 2011 IEEE.published_or_final_versio

The enhanced expression of IL-17-secreting T cells during the early progression of atherosclerosis in ApoE-deficient mice fed on a western-type diet

Atherosclerosis is a chronic progressive inflammatory disorder and the leading cause of cardiovascular mortality. Here we assessed the dynamic changes of T-cell-derived cytokines, such as inteferon (IFN)-gamma, interleukin (IL)-17 and IL-4, during the progression of atherosclerosis in apolipoprotein E-null (ApoE(-/-)) mice, to understand the role of immune responses in different stages of atherosclerosis. Male ApoE(-/-) mice were fed a high-fat, western-type diet (WD: 21% lipid, 1.5% cholesterol) after 5 weeks of age and were compared with C57BL/6 wild-type control mice fed a standard chow diet. Atherosclerotic lesions appeared in the aortic sinus of ApoE(-/-) mice 4 weeks after WD and the lesions progressed and occupied > 50% of the total sinus area 16 weeks after WD. Aortic IL-17 mRNA and protein expression started to increase in ApoE(-/-) mice after 4 weeks on the WD and peaked at around 8-12 weeks on the WD. In terms of systemic expression of T-cell-derived cytokines, IL-17 production from splenocytes after anti-CD3/CD28 stimuli increased from 4 weeks on the WD, peaked at 12 weeks and returned to control levels at 16 weeks. The production of IFN-gamma and IL-4 (Th1 and Th2 cytokines, respectively) from splenocytes was delayed compared with IL-17. Taken together, the present data indicate that Th17 cell response may be involved at an early stage in the development of atherosclerosis.11911Ysciescopu

Effects of different annealing gases on pentacene OTFT with HfLaO gate dielectric

Pentacene organic thin-film transistors (OTFTs) with HfLaO high-kappa gate dielectric were fabricated. The dielectric was prepared by a sputtering method and then annealed in N2,NH3,O2, or NO at 400°C. The carrier mobility of the NH3-annealed OTFT could reach 0.59 cm2/V̇s, which is higher than those of the other three devices. Moreover, the NH3-annealed OTFT obtained the smallest subthreshold swing of 0.26 V/dec among them. Furthermore,1/f noise measurement indicated that the NH3-annealed OTFT achieved the smallest 1/f noise. All these should be attributed to the improved interface between the gate dielectric and the organic semiconductor associated with the passivation effects of the NH3 annealing on the dielectric surface. © 2010 IEEE.published_or_final_versio