Dissipation Effects in Hybrid Systems

The dissipation effect in a hybrid system is studied in this Letter. The hybrid system is a compound of a classical magnetic particle and a quantum single spin. Two cases are considered. In the first case, we investigate the effect of the dissipative quantum subsystem on the motion of its classical partner. Whereas in the second case we show how the dynamics of the quantum single spin are affected by the dissipation of the classical particle. Extension to general dissipative hybrid systems is discussed.Comment: 4+ pages, 4 figure

COTS simulation package (CSP) interoperability - A solution to synchronous entity passing

In this paper we examine Commercial-Off-The- Shelf (COTS) Simulation Package (CSP) interoperability for one type of distributed simulation problem, namely synchronous entity passing. Synchronous entity passing is also referred to as the bounded buffer interoperability reference model. It deals with the case where for entities passed between models the receiving queue is bounded or the receiving workstation has limited capacity. This means the sending model must check the status of the receiving model before it can send entities. Correspondingly, the receiving model should update the status information dynamically when it changes. Similar to the work done on asynchronous entity passing, the High Level Architecture is chosen as the underlying standard to support reuse and interoperability. To simplify the integration of the CSP and the HLA, a middleware layer called DSManager is provided. Some new problems generated for synchronous entity passing are discussed and solutions are proposed together with a description of their implementation. Two sets of experiments are conducted to evaluate the solutions using a CSP Emulator (CSPE) which supports both standalone and distributed simulation

Modeling the AgInSbTe Memristor

The AgInSbTe memristor shows gradual resistance tuning characteristics, which makes it a potential candidate to emulate biological plastic synapses. The working mechanism of the device is complex, and both intrinsic charge-trapping mechanism and extrinsic electrochemical metallization effect are confirmed in the AgInSbTe memristor. Mathematical model of the AgInSbTe memristor has not been given before. We propose the flux-voltage controlled memristor model. With piecewise linear approximation technique, we deliver the flux-voltage controlled memristor model of the AgInSbTe memristor based on the experiment data. Our model fits the data well. The flux-voltage controlled memristor model and the piecewise linear approximation method are also suitable for modeling other kinds of memristor devices based on experiment data

Supergravity approach to tachyon condensation on the brane-antibrane system

We study the tachyon condensation on the D-brane--antiD-brane system from the supergravity point of view. The non-supersymmetric supergravity solutions with symmetry ISO($p,1$) $\times$ SO($9-p$) are known to be characterized by three parameters. By interpreting this solution as coincident $N$ D$p$-branes and ${\bar N}$ ${\bar {\rm D}}p$-branes we give, for the first time, an explicit representation of the three parameters of supergravity solutions in terms of $N, \bar N$ and the tachyon vev. We demonstrate that the solution and the corresponding ADM mass capture all the required properties and give a correct description of the tachyon condensation advocated by Sen on the D-brane--antiD-brane system.Comment: 9 page

Improvement of critical current in MgB2/Fe wires by a ferromagnetic sheath

Transport critical current (Ic) was measured for Fe-sheathed MgB2 round wires. A critical current density of 5.3 x 10^4 A/cm^2 was obtained at 32K. Strong magnetic shielding by the iron sheath was observed, resulting in a decrease in Ic by only 15% in a field of 0.6T at 32K. In addition to shielding, interaction between the iron sheath and the superconductor resulted in a constant Ic between 0.2 and 0.6T. This was well beyond the maximum field for effective shielding of 0.2T. This effect can be used to substantially improve the field performance of MgB2/Fe wires at fields at least 3 times higher than the range allowed by mere magnetic shielding by the iron sheath. The dependence of Ic on the angle between field and current showed that the transport current does not flow straight across the wire, but meanders between the grains

Breakdown of QCD Factorization for P-Wave Quarkonium Production at Low Transverse Momentum

Quarkonium production at low transverse momentum in hadron collisions can be used to extract Transverse-Momentum-Dependent(TMD) gluon distribution functions, if TMD factorization holds there. We show that TMD factorization for the case of P-wave quarkonium with $J^{PC}=0^{++}, 2^{++}$ holds at one-loop level, but is violated beyond one-loop level. TMD factorization for other P-wave quarkonium is also violated already at one-loop.Comment: Published version in Physics Letters B (2014), pp. 103-10

Transverse Momentum Dependent Factorization for Quarkonium Production at Low Transverse Momentum

Quarkonium production in hadron collisions at low transverse momentum $q_\perp \ll M$ with $M$ as the quarkonium mass can be used for probing transverse momentum dependent (TMD) gluon distributions. For this purpose, one needs to establish the TMD factorization for the process. We examine the factorization at the one-loop level for the production of $\eta_c$ or $\eta_b$. The perturbative coefficient in the factorization is determined at one-loop accuracy. Comparing the factorization derived at tree level and that beyond the tree level, a soft factor is, in general, needed to completely cancel soft divergences. We have also discussed possible complications of TMD factorization of p-wave quarkonium production.Comment: Title changed in the journal, published versio

A Memristor Model with Piecewise Window Function

In this paper, we present a memristor model with piecewise window function, which is continuously differentiable and consists of three nonlinear pieces. By introducing two parameters, the shape of this window function can be flexibly adjusted to model different types of memristors. Using this model, one can easily obtain an expression of memristance depending on charge, from which the numerical value of memristance can be readily calculated for any given charge, and eliminate the error occurring in the simulation of some existing window function models