Analysis of spatial modes in half-disk lasers based on AlGaAsSb/InGaAsSb quantum well nanoheterostructures

International audienc

Interference of emission from disk-shaped lasers based on quantum-confined AlGaAsSb/InGaAsSb nanoheterostructures

International audienc

Recombination nearby N-n GaSb/GaInAsSb Staggered Lineup Heterojunction

The recombination nearby large band-offset staggered lineup N-GaSb/n-GaInAsSb heterojunction was investigated by means of the electroluminescence and carrier lifetime measurements. It was demonstrated that the nature of recombination, tuning rate as well as relation between radiative and non-radiative recombination strongly depend on the N-n band-offset and that its increase improves the carrier localization on the N-n interface

Tunable mid-infrered whispering gallery mode lasers

International audienc

High-power LEDs based on InGaAsP/InP heterostructures

Hig-hpower ligh-temitting diodes (LEDs) wi th mesa diameters of 100, 200, and 300 μ m are devel oped on the basis of InGaAsP/InP heterostructures. The mesas are close in shape to a truncated cone with a generatrix inclination angle of ~45° in the vicinity of the active region of the LED, with a ring etched around the mesa serving as a reflector. The emission spectra and directivity patterns of these LEDs are studied in a wide range of current densities and it is shown that radiative recombination is dominant to a current density of ~5000 A/cm 2 , which makes these structures promising for the development of highpo-er LEDs. An emission power of ~14 mW is obtained in the continuous-wave mode ( I = 0.2 A, λ = 1.1 μ m), and that of 77 mW, in the pulsed mode ( I = 2 A, λ = 1.1 μ m), which corresponds to external quantum efficiencies of 6.2 and 3.4%, respectivel