66 research outputs found
Analysis of spatial modes in half-disk lasers based on AlGaAsSb/InGaAsSb quantum well nanoheterostructures
International audienc
Flattening of dynamic dielectric phase grating and single-mode lasing under the conditions of transverse oscillations of luminous flux
Interference of emission from disk-shaped lasers based on quantum-confined AlGaAsSb/InGaAsSb nanoheterostructures
International audienc
Visual observation of frequency tuning in whispering gallery mode diode laser at room temperature
Recombination nearby N-n GaSb/GaInAsSb Staggered Lineup Heterojunction
The recombination nearby large band-offset staggered lineup N-GaSb/n-GaInAsSb heterojunction was investigated by means of the electroluminescence and carrier lifetime measurements. It was demonstrated that the nature of recombination, tuning rate as well as relation between radiative and non-radiative recombination strongly depend on the N-n band-offset and that its increase improves the carrier localization on the N-n interface
Spectral line width of the current-tunable lasers on the base of InAsSb/InAsSbP at low temperature
High-power LEDs based on InGaAsP/InP heterostructures
Hig-hpower ligh-temitting diodes (LEDs) wi
th mesa diameters of 100, 200, and 300
μ
m are devel
oped on the basis of InGaAsP/InP heterostructures. The
mesas are close in shape to a truncated cone with a
generatrix inclination angle of ~45° in the vicinity of
the active region of the LED, with a ring etched around
the mesa serving as a reflector. The emission spectra
and directivity patterns of these LEDs are studied in a
wide range of current densities and it is shown that
radiative recombination is dominant to a current density
of ~5000 A/cm
2
, which makes these structures promising for the development of highpo-er LEDs. An emission power of ~14 mW is obtained in the continuous-wave mode (
I
= 0.2 A,
λ
= 1.1
μ
m), and that of 77 mW,
in the pulsed mode (
I
= 2 A,
λ
= 1.1
μ
m), which corresponds to external quantum efficiencies of 6.2 and
3.4%, respectivel
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