Anomalous Hall effect in (In,Mn)Sb dilute magnetic semiconductor

High magnetic field study of Hall resistivity in the ferromagnetic phase of (In,Mn)Sb allows one to separate its normal and anomalous components. We show that the anomalous Hall term is not proportional to the magnetization, and that it even changes sign as a function of magnetic field. We also show that the application of pressure modifies the scattering process, but does not influence the Hall effect. These observations suggest that the anomalous Hall effect in (In,Mn)Sb is an intrinsic property and support the application of the Berry phase theory for (III,Mn)V semiconductors. We propose a phenomenological description of the anomalous Hall conductivity, based on a field-dependent relative shift of the heavy- and light-hole valence bands and the split-off band

Single-born XX /XY chimaeric bulls with normal phenotype

International audienc

Evidence for localization and 0.7 anomaly in hole quantum point contacts

Quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are investigated by low-temperature electrical conductance spectroscopy measurements. Besides one-dimensional conductance quantization in units of $2e^{2}/h$ a pronounced extra plateau is found at about $0.7(2e^{2}/h)$ which possesses the characteristic properties of the so-called "0.7 anomaly" known from experiments with n-type samples. The evolution of the 0.7 plateau in high perpendicular magnetic field reveals the existence of a quasi-localized state and supports the explanation of the 0.7 anomaly based on self-consistent charge localization. These observations are robust when lateral electrical fields are applied which shift the relative position of the electron wavefunction in the quantum point contact, testifying to the intrinsic nature of the underlying physics.Comment: 4.2 pages, 3 figure

Soil seed bank of the invasive Robinia pseudoacacia in planted Pinus nigra stands

Pinus nigra and Robinia pseudoacacia are exotic trees used for afforestation in Hungary. Pinus nigra was non-invasive, however R. pseudoacacia escaped from cultivation and invaded several vegetation types including pine plantations. It has recently been planned to cut P. nigra plantations and replace them by native tree stands, especially in nature reserves. The scattered presence of R. pseudoacacia specimens in pine stands might place constraints on planned tree replacement because of their vegetative resprouting and recolonization from an established seed bank. The aim of this study was to investigate the soil seed bank under the canopy of solitary R. pseudoacacia specimens found in P. nigra plantations. Altogether 250 soil samples were collected from the 0–6 and 6–12 cm soil layers under solitary Robinia trees of varying ages (with basal areas between 62.4 and 1089.3 cm2). Seeds were separated by sieving then scarified and germinated. Seed bank density ranged between 640 and 2285 seedsm–2 with an average distribution of 82.7% and 17.3% in the upper and lower soil layer, respectively. Total density of the seed bank and also the seed bank ratio of the lower soil layer increased with tree age. The accumulated seed bank of R. pseudoacacia should be considered in the careful planning of tree replacement operations in Pinus nigra stands

Electrical control over single hole spins in nanowire quantum dots

Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising alternative. Holes in III-V semiconductors have unique properties, such as strong spin-orbit interaction and weak coupling to nuclear spins, and therefore have potential for enhanced spin control and longer coherence times. Weaker hyperfine interaction has already been reported in self-assembled quantum dots using quantum optics techniques. However, challenging fabrication has so far kept the promise of hole-spin-based electronic devices out of reach in conventional III-V heterostructures. Here, we report gate-tuneable hole quantum dots formed in InSb nanowires. Using these devices we demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tuneable between hole and electron QDs, enabling direct comparison between the hyperfine interaction strengths, g-factors and spin blockade anisotropies in the two regimes

A Halomethane thermochemical network from iPEPICO experiments and quantum chemical calculations

Internal energy selected halomethane cations CH3Cl+, CH2Cl2+, CHCl3+, CH3F+, CH2F2+, CHClF2+ and CBrClF2+ were prepared by vacuum ultraviolet photoionization, and their lowest energy dissociation channel studied using imaging photoelectron photoion coincidence spectroscopy (iPEPICO). This channel involves hydrogen atom loss for CH3F+, CH2F2+ and CH3Cl+, chlorine atom loss for CH2Cl2+, CHCl3+ and CHClF2+, and bromine atom loss for CBrClF2+. Accurate 0 K appearance energies, in conjunction with ab initio isodesmic and halogen exchange reaction energies, establish a thermochemical network, which is optimized to update and confirm the enthalpies of formation of the sample molecules and their dissociative photoionization products. The ground electronic states of CHCl3+, CHClF2+ and CBrClF2+ do not confirm to the deep well assumption, and the experimental breakdown curve deviates from the deep well model at low energies. Breakdown curve analysis of such shallow well systems supplies a satisfactorily succinct route to the adiabatic ionization energy of the parent molecule, particularly if the threshold photoelectron spectrum is not resolved and a purely computational route is unfeasible. The ionization energies have been found to be 11.47 ± 0.01 eV, 12.30 ± 0.02 eV and 11.23 ± 0.03 eV for CHCl3, CHClF2 and CBrClF2, respectively. The updated 0 K enthalpies of formation, ∆fHo0K(g) for the ions CH2F+, CHF2+, CHCl2+, CCl3+, CCl2F+ and CClF2+ have been derived to be 844.4 ± 2.1, 601.6 ± 2.7, 890.3 ± 2.2, 849.8 ± 3.2, 701.2 ± 3.3 and 552.2 ± 3.4 kJ mol–1, respectively. The ∆fHo0K(g) values for the neutrals CCl4, CBrClF2, CClF3, CCl2F2 and CCl3F and have been determined to be –94.0 ± 3.2, –446.6 ± 2.7, –702.1 ± 3.5, –487.8 ± 3.4 and –285.2 ± 3.2 kJ mol–1, respectively