Playing with Dimensions: Rational Design for Heteroepitaxial p–n Junctions

A design for a heteroepitaxial junction by the way of one-dimensional wurzite on a two-dimensional spinel structure in a low-temperature solution process was introduced, and it's capability was confirmed by successful fabrication of a diode consisting of p-type cobalt oxide (Co₃O₄) nanoplate/n-type zinc oxide (ZnO) nanorods, showing reasonable electrical performance. During thermal decomposition, the 30° rotated lattice orientation of Co₃O₄ nanoplates from the orientation of β-Co­(OH)₂ nanoplates was directly observed using high-resolution transmission electron microscopy. The epitaxial relations and the surface stress-induced ZnO nanowire growth on Co₃O₄ were well supported using the first-principles calculations. Over the large area, (0001) preferred oriented ZnO nanorods epitaxially grown on the (111) plane of Co₃O₄ nanoplates were experimentally obtained. Using this epitaxial p–n junction, a diode was fabricated. The ideality factor, turn-on voltage, and rectifying ratio of the diode were measured to be 2.38, 2.5 V and 10⁴, respectively

Playing with Dimensions: Rational Design for Heteroepitaxial p–n Junctions

A design for a heteroepitaxial junction by the way of one-dimensional wurzite on a two-dimensional spinel structure in a low-temperature solution process was introduced, and it's capability was confirmed by successful fabrication of a diode consisting of p-type cobalt oxide (Co₃O₄) nanoplate/n-type zinc oxide (ZnO) nanorods, showing reasonable electrical performance. During thermal decomposition, the 30° rotated lattice orientation of Co₃O₄ nanoplates from the orientation of β-Co­(OH)₂ nanoplates was directly observed using high-resolution transmission electron microscopy. The epitaxial relations and the surface stress-induced ZnO nanowire growth on Co₃O₄ were well supported using the first-principles calculations. Over the large area, (0001) preferred oriented ZnO nanorods epitaxially grown on the (111) plane of Co₃O₄ nanoplates were experimentally obtained. Using this epitaxial p–n junction, a diode was fabricated. The ideality factor, turn-on voltage, and rectifying ratio of the diode were measured to be 2.38, 2.5 V and 10⁴, respectively