Time-Shared Execution of Realtime Computer Vision Pipelines by Dynamic Partial Reconfiguration

This paper presents an FPGA runtime framework that demonstrates the feasibility of using dynamic partial reconfiguration (DPR) for time-sharing an FPGA by multiple realtime computer vision pipelines. The presented time-sharing runtime framework manages an FPGA fabric that can be round-robin time-shared by different pipelines at the time scale of individual frames. In this new use-case, the challenge is to achieve useful performance despite high reconfiguration time. The paper describes the basic runtime support as well as four optimizations necessary to achieve realtime performance given the limitations of DPR on today's FPGAs. The paper provides a characterization of a working runtime framework prototype on a Xilinx ZC706 development board. The paper also reports the performance of realtime computer vision pipelines when time-shared

Engineering the composition, morphology, and optical properties of InAsSb nanostructures via graded growth technique

Graded growth technique is utilized to realize the control over the composition, morphology, and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures. By increasing the initial mole fraction of the Sb precursor during the graded growth of InAsSb, more Sb atoms can be incorporated into the InAsSb nanostructures despite the same Sb mole fraction averaged over the graded growth. This leads to a shape change from dots to dashes/wires for the InAsSb nanostructures. As a result of the composition and morphology change, photoluminescence from the InAsSb nanostructures shows different polarization and temperature characteristics. This work demonstrates a technologically important technique—graded growth, to control the growth and the resultant physical properties of self-assembled semiconductor nanostructures.Financial support from Australian Research Council is gratefully acknowledged

Multiple wavelength InGaAs quantum dot lasers using selective area epitaxy

The authors demonstrate multiple wavelength lasers fabricated from InGaAsquantum dots. Selective area epitaxy is used to grow the active region, consisting of five layer stack of InGaAsquantum dots with different band gapenergies in selected regions of the substrate, for fabrication of the lasers. The mechanism responsible for engineering of the band gap of quantum dots is discussed. The performance of the selectively grown lasers is compared to the lasers fabricated from structures grown in a standard, nonselective area growth process.The Australian Research Council is gratefully acknowledged for financial support

A revised checklist of Hawaiian mosses

A revised and updated literature-based checklist of Hawaiian mosses is presented. Geographic coverage includes the eight main Hawaiian Islands; the Northwestern Hawaiian Islands are excluded. The checklist is alphabetically ordered by scientific names; the family is noted for each genus. Synonyms and misapplied names are cross-referenced to the accepted names. A bibliography of supporting references is included

Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy

Cross-sectional scanning spreading resistance microscopy (SSRM) is used to investigate stacked InGaAs/GaAs quantum dot(QD)structures with different doping schemes. Spatially resolved imaging of the QDs by SSRM is demonstrated. The SSRM contrast obtained for the QD layers is found to depend on doping in the structure. In the undoped structures both QD-layers and QDs within the layers could be resolved, while in the dopedstructures the QD layers appear more or less uniformly broadened. The origin of the SSRM contrast in the QD layer in the different samples is discussed and correlated with doping schemes.T. Hakkarainen, O. Douhéret, and S. Anand would like to acknowledge the Swedish Research Council VR for fi- nancial support and the Kurt-Alice Wallenberg KAW foundation for financing the microscope. L. Fu, H. H. Tan, and C. Jagadish would like to acknowledge the Australian Research Council ARC for financial support and Australian National Fabrication Facility ANFF for access to the facilities

Electron and trap dynamics in As-ion-implanted and annealed GaAs

The ultrafast dynamics of As-ion-implanted and annealed GaAs is investigated using transmission pump–probe measurements.Carrier recombination time was found to increase from 4 to 40 ps with increasing annealing temperature. At lower annealing temperatures, the transmitted optical signal is dominated by induced absorption and at higher annealing temperatures this effect is replaced by induced transparency.This work was supported in part by the EC INCOCOPERNICUS project ‘‘DUO—devices for ultrafast optoelectronics’’ and the Lithuanian Science and Study Foundation

Influence of cap layer on implantation induced interdiffusion in InP/InGaAs quantum wells

We have investigated the effect of implantation at room temperature and 200 °C into lattice matched InP/InGaAs quantum wellstructures capped with InP and InGaAs layers. P− ions of 20 keV were implanted into the cap layer at doses of 1×10¹²−1×10¹⁴ cm⁻². The dose dependent evolution of shifts in photoluminescence energy for the InP capped sample was found to be affected by the implant temperature. Rutherford back scattering measurements show that the nature of the damage induced at different implant temperatures is responsible for this behavior. It was found that the InGaAs capped sample was less sensitive to the implant temperature than the InP capped sample

The Effect of Planting Density and Supports on the Seed Yield of Mucuna cochinchinensis

Mucuna cochinchinensis was planted for seed production using six planting systems. These comprised combinations of two planting distances; 1. 0 m x 1.0 m and 2.0 m x 2.0 m with three types of supports; no support, individual pole support for each plant or the wire-trellis type of support. Plants using either type of support outyielded the seed production from plants which received no support. Mean yield of normal seeds for unsupported plants, plants with individual support and plants with the wire trellis type of support were 76,677 and 736 kg/ha respectively. The lower yield of normal seeds from unsupported plants resulted from a combination of a lower total seed yield and a higher percentage of rotten seeds. Rotten seeds in unsupported plants comprised 68 percent of total seed yield compared to 38 percent and 33 percent for individually supported and wire-trellis supported plants respectively. Differences between the two types of supports were not significant. Planting distance did not have a significant effect on seed yield. However, for plants without any support there was a higher percentage of ;otten seeds (78%) for the more closely spaced plants than for plants planted at the wider spacing (54%)