Time-dependent responses of the neutral mass density to fixed magnetospheric energy inputs into the cusp region in the thermosphere during a period of large IMF BY: a high-resolution two-dimensional local modeling

Thermospheric mass density values around the 400-km altitude in the cusp can be significantly enhanced as compared to regions around the cusp. To gain insights into the extent to which the magnitude of the cusp mass density enhancements can be explained by the static distributions of moderate electric field and electron precipitation typical for a period of large IMF BY, we employed a high-resolution two-dimensional local model that can represent the plasma features that are characteristic of the cusp: azimuthal ion flow and low-energy electron precipitation. We also calculated the thermospheric dynamics with and without neutral–ion drag. We found that in the calculation with this drag the obtained mass density enhancement is 10% at most, indicating that the thermospheric dynamics imposing the moderate static electric field and electron precipitation can only explain about one-third of the typical magnitude of cusp thermospheric mass density, i.e., 33%. We also found that in the calculation without neutral–ion drag the magnitude of the mass density enhancement is slightly larger than the one with the neutral–ion drag. To explain the average magnitude of the cusp mass density enhancements completely, other energy inputs such as Alfvén waves, in addition to the static distributions of electric field and electron precipitation, are needed

Development of laser-combined scanning multiprobe spectroscopy and application to analysis of WSe2/MoSe2 in-plane heterostructure

By combining scanning multiprobe (MP) microscopy with optical methods such as light-modulated spectroscopy (LMS) and optical pump-probe (OPP) method, we have succeeded in developing a microscopy method for measuring electronic structures and photoinduced carrier dynamics in microscopic structures. We demonstrated its performance by analyzing the electronic structures in a monolayer island of a WSe2/MoSe2 in-plane heterostructure grown on a SiO2/Si substrate. By observing the field-effect transistor characteristics and photocurrent mapping over the heterostructure by LMS, we were able to visualize the band structure. Positional dependence of carrier dynamics was also successfully probed by OPP-MP spectroscopy