Out-of-plane focusing grating couplers for silicon photonics integration with optical MRAM technology

We present the design methodology and experimental characterization of compact out-of-plane focusing grating couplers for integration with magnetoresistive random access memory technology. Focusing grating couplers have recently found attention as layer-couplers for photonic-electronic integration. The components we demonstrate are designed for a wavelength of 1550 nm, fabricated in a standard 220 nm SOI photonic platform and optimized given the fabrication restrictions for standard 193-nm UV lithography. For the first time, we extend the design based on the phase matching condition to a two-dimensional (2-D) grating design with two optical input ports. We further present the experimental characterization of the focusing behaviour by spatially probing the emitted beam with a tapered-and-lensed fiber and demonstrate the polarization controlling capabilities of the 2-D FGCs

Design optimization for energy-efficient pulse-switching networks in carrier-injection based Si-photonics

We compare pulse-switching operations in MZI- and ring-switches both experimentally and based on large-signal circuit simulations. With a modification in switch design and with optimization of phase modulator lengths, we show high-speed switches with potential for an over 3 dB improvement in energy consumption

Simulations of a sub-kilohertz linewidth laser in monolithic indium phosphide

Narrow-linewidth lasers play a crucial role in various applications, including sensing, coherent communication, and quantum communication. Semiconductor lasers achieving narrow linewidths employ long external cavities to extend photon lifetime within the resonator. For monolithically integrated (active-passive) platforms the loss of the passive waveguides puts a limit on this approach, however. To our knowledge, the state-of-the-art linewidth for such monolithic lasers stands at 10 kHz

Integrated Magneto-photonic Non-Volatile Multi-Bit Memory

We present an integrated magneto-photonic device for all-optical switching of non-volatile multi-bit spintronic memory. The bits are based on stand-alone magneto-tunnel junctions which are perpendicularly magnetized with all-optically switchable free layers, coupled onto photonic crystal nanobeam cavities on an indium phosphide based platform. This device enables switching of the magnetization state of the bits by locally increasing the power absorption of light at resonance with the cavity. We design an add/drop network of cavities to grant random access to multiple bits via a wavelength-division multiplexing scheme. Based on a three-dimensional finite-difference time-domain method, we numerically illustrate a compact device capable of switching and accessing 8 bits in different cavities with a 5 nm wavelength spacing in the conventional (C) telecommunication band. Our multi-bit device holds promise as a new paradigm for developing an ultrafast photonically-addressable spintronic memory and may also empower novel opportunities for photonically-driven spintronic-based neuromorphic computing.Comment: 21 pages, 6 figures, 1 tabl

Out-of-plane focussing polarization control grating couplers for photonic-spintronic integration

We demonstrate the first out-of-plane 2D focusing grating coupler (FGC), designed for compact photonic-spintronic integration allowing full polarization control of the emitted light. The couplers are designed for a standard 220nm-SOI platform and fabricated with 193 nm UV lithography. These couplers can find applicability as polarization (de)multiplexers, optical layer couplers or to realize optically enabled spintronic memory based on helicity dependent all-optical switching (AOS)[1,2]

Compact widely tunable laser integrated on an indium phosphide membrane platform

We present the design, fabrication, and characterization results of a compact, widely tunable laser realized on an indium phosphide membrane-on-silicon (IMOS) platform. The laser features a compact Mach–Zehnder interferometric structure as the wavelength-selective intracavity filter with a footprint of 0.13 mm2. The filter design is optimized to ensure narrow filter transmission and high side-mode-to-main-mode-ratio, enabling single-mode operation for the laser. The high optical confinement on the IMOS platform can support tight waveguide bends. Leveraging this, the laser achieves a short cavity length, further enhancing the single-mode operation. Measurement results indicate a threshold current of 29 mA and a maximum on-chip output power of approximately 3.6 dBm and wall plug efficiency of 1.8%. The side-mode suppression ratio ranges from 30 to 44 dB, with a tuning range spanning 40 nm, from 1555 to 1595 nm. A complete tuning lookup table is generated via an automated setup incorporating a stochastic search algorithm

Continuous wave-pumped wavelength conversion in low-loss silicon nitride waveguides

In this Letter we introduce a complementary metal-oxide semiconductor (CMOS)-compatible low-loss Si3N4 waveguide platform for nonlinear integrated optics. The waveguide has a moderate nonlinear coefficient of 285 W∕km, but the achieved propagation loss of only 0.06 dB∕cm and the ability to handle high optical power facilitate an optimal waveguide length for wavelength conversion. We observe a constant quadratic dependence of the four-wave mixing (FWM) process on the continuous-wave (CW) pump when operating in the C-band, which indicates that the waveguide has negligible high-power constraints owing to nonlinear losses. We achieve a conversion efficiency of −26.1 dB and idler power generation of −19.6 dBm. With these characteristics, we present for the first time, to the best of our knowledge, CW-pumped data conversion in a non-resonant Si3N4 waveguide

Wavelength Conversion in Low Loss Si3N4 Waveguides

We show wavelength conversion in a compact Si3N4 waveguide. Combining low loss, long length, relatively large nonlinear coefficient, high-power handling and absence of two-photon absorption, this platform is promising for integrated nonlinear optics applications

Towards high-speed energy-efficient pulse-switching networks implemented in carrier-injection-based si-photonics

We show that carrier injection based Si-photonics modulators [1] can form the basis for building compact, low-loss and power efficient reconfigurable networks, enabling the switching of ps-pulse trains with sub-GHz repetition rates. The use of pre-emphasis-based activation [2] permits ns-scale switching transitions. Although the steady-state energy consumption in this platform is well studied, the impact of the dynamic energy consumption for these ns switching periods is not well known. Here, we show pre-emphasis-based sub-ns transitions and present a novel large-signal analysis that allows the driving scheme optimization for energy-efficient pulse switching