Humidity Dependence of Charge Transport through DNA Revealed by Silicon-Based Nanotweezers Manipulation

AbstractThe study of the electrical properties of DNA has aroused increasing interest since the last decade. So far, controversial arguments have been put forward to explain the electrical charge transport through DNA. Our experiments on DNA bundles manipulated with silicon-based actuated tweezers demonstrate undoubtedly that humidity is the main factor affecting the electrical conduction in DNA. We explain the quasi-Ohmic behavior of DNA and the exponential dependence of its conductivity with relative humidity from the adsorption of water on the DNA backbone. We propose a quantitative model that is consistent with previous studies on DNA and other materials, like porous silicon, subjected to different humidity conditions

A New Experimental Approach to Evaluate Plasma-induced Damage in Microcantilever

Plasma  etching,  during  micro-fabrication  processing  is  indispensable  for  fabricating  MEMS  structures.  During  the plasma  processes,  two  major matters,  charged  ions  and  vacuum–ultraviolet  (VUV)  irradiation  damage,  take  charge  of reliability  degradation.  The  charged  ions  induce  unwanted  sidewall  etching,  generally  called  as  “notching”,  which causes  degradation  in  brittle  strength.  Furthermore,  the  VUV  irradiation  gives  rise  to  crystal  defects  on  the  etching surface.  To  overcome  the  problem,  neutral  beam  etching  (NBE),  which  use  neutral  particles  without  the  VUV irradiation,  has  been  developed.  In  order  to  evaluate  the  effect  of  the  NBE  quantitatively,  we  measured  the  resonance property of a micro-cantilever before and after NBE treatment. The thickness of damage layer (δ) times the imaginary part  of  the  complex  Young's  modulus  (Eds)  were  then  compared,  which  is  a  parameter  of  surface  damage.  Although plasma processes  make the initial surface of cantilevers damaged during their fabrication, the removal of that damage by NBE was confirmed as the reduction in δEds. NBE will realize a damage-free surface for microstructures

A New Experimental Approach to Evaluate Plasma-induced Damage in Microcantilever

Plasma  etching,  during  micro-fabrication  processing  is  indispensable  for  fabricating  MEMS  structures.  During  the plasma  processes,  two  major matters,  charged  ions  and  vacuum–ultraviolet  (VUV)  irradiation  damage,  take  charge  of reliability  degradation.  The  charged  ions  induce  unwanted  sidewall  etching,  generally  called  as  “notching”,  which causes  degradation  in  brittle  strength.  Furthermore,  the  VUV  irradiation  gives  rise  to  crystal  defects  on  the  etching surface.  To  overcome  the  problem,  neutral  beam  etching  (NBE),  which  use  neutral  particles  without  the  VUV irradiation,  has  been  developed.  In  order  to  evaluate  the  effect  of  the  NBE  quantitatively,  we  measured  the  resonance property of a micro-cantilever before and after NBE treatment. The thickness of damage layer (δ) times the imaginary part  of  the  complex  Young's  modulus  (Eds)  were  then  compared,  which  is  a  parameter  of  surface  damage.  Although plasma processes  make the initial surface of cantilevers damaged during their fabrication, the removal of that damage by NBE was confirmed as the reduction in δEds. NBE will realize a damage-free surface for microstructures.Keywords: cantilever, neutral beam etching, surface los

An Electret-Augmented Low-Voltage MEMS Electrostatic Out-of-Plane Actuator for Acoustic Transducer Applications

Despite the development of energy-efficient devices in various applications, microelectromechanical system (MEMS) electrostatic actuators yet require high voltages to generate large displacements. In this respect, electrets exhibiting quasi-permanent electrical charges allow large fixed voltages to be integrated directly within electrode structures to reduce or eliminate the need of DC bias electronics. For verification, a − 40   V biased electret layer was fabricated at the inner surface of a silicon on insulator (SOI) structure facing a 2 μm gap owing to the high compatibility of silicon micromachining and the potassium-ion-electret fabrication method. A − 10   V electret-augmented actuator with an out-of-plane motion membrane reached a sound pressure level (SPL) of 50 dB maximum with AC input voltage of V i n = 5   V pp alone, indicating a potential for acoustic transducer usage such as microspeakers. Such devices with electret biasing require only the input signal voltage, thus contributing to reducing the overall power consumption of the device system

Development of a Cantilever-Type Electrostatic Energy Harvester and Its Charging Characteristics on a Highway Viaduct

We have developed a micro-electro-mechanical systems (MEMS) electrostatic vibratory power generator with over 100 μ W RMS of (root-mean-square) output electric power under 0.03 G RMS (G: the acceleration of gravity) accelerations. The device is made of a silicon-on-insulator (SOI) wafer and is fabricated by silicon micromachining technology. An electret built-in potential is given to the device by electrothermal polarization in silicon oxide using potassium ions. The force factor, which is defined by a proportional coefficient of the output current with respect to the vibration velocity, is 2.34 × 10 − 4 C/m; this large value allows the developed vibration power generator to have a very high power efficiency of 80.7%. We have also demonstrated a charging experiment by using an environmental acceleration waveform with an average amplitude of about 0.03 G RMS taken at a viaduct of a highway, and we obtained 4.8 mJ of electric energy stored in a 44 μ F capacitor in 90 min

研究解説 : Fabrication of Nanometric Oscillators

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