Dielectric response of temperature-graded ferroelectric films

2005-2006 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Parallel resource co-allocation for the computational grid

Author name used in this publication: K. W. Chau2006-2007 > Academic research: refereed > Publication in refereed journalAccepted ManuscriptPublishe

Effects of annealing gas species on the electrical properties and reliability of Ge MOS capacitors with high-k Y 2O 3 gate dielectric

In this work, Ge MOS capacitors with Y 2O 3 gate dielectric were fabricated. The effects of annealing in N 2, NH 3 O 2 or NO ambient were investigated. Experimental results demonstrated that the NO annealing could improve both electrical properties and reliability of Ge MOS devices with Y 2O 3 dielectric. On the other hand, the NH 3 annealing resulted in H-related traps while the O 2 annealing suffered from extra GeO x growth, thus both degrading the performance of the devices. ©2009 IEEE.published_or_final_versionThe IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2009), Xi'an, China, 25-27 December 2009. In Proceedings of EDSSC, 2009, p. 243-24

The influence of endogenous hormones on the formation of buds from stems of bitter melon (Momordıca charantıa L.)

Stems of bitter melon (Momordica charantia L.) cv. Dabai were used to establish in vitro cultures. The endogenous hormone concentrations (indoleacetic acid [IAA], abscisic acid [ABA], gibberellins 3 [GA3], zeatin [ZT]) of the calluses were determined by means of high pressure liquid chromatography (HPLC). The endogenous ZT was higher in the stem calluses that had formed buds, and there was a higher IAA/ZT ratio and GA3/ZT ratio in the calluses having no capacity for buds formation. The results showed that addition of plant growth regulator influences endogenous hormone status and it will be helpful for in vitro propagation of bitter melon.Key words: Endogenous phytohormones, high pressure liquid chromatography, in vitro culture, bitter melon (Momordica charantia L.)

Optimized system for plant regeneration of watermelon (Citrullus lanatus Thumb.)

The objective of this study was to establish an efficient and reproducible in vitro plant regeneration for Citrullus lanatus cv. Zaojia. To achieve optimal conditions for adventitious shoot induction, five explants (entire cotyledons, distal cotyledons, proximal cotyledons, cotyledonary node A and cotyledonary node B) were tested on MS medium supplemented with different concentrations and combinations of growth regulators (0 to 0.2 mg/L IAA and 1.0 to 5.0 mg/L BA), the results showed that entire cotyledons cultured in MS + BA (2.0mg/L) + IAA(0.2mg/L) achieved the highest regenerated rate (89.67%) and the optimal protocol screened in this experiment had 7.69 ± 0.10 shoots per explants. Adventitious shoots were able to elongate both on MS medium with 0.2 mg/L KT and 0.2 mg/L NAA; IBA 0.3mg/L was found to be effective in the production of root. Acclimatized plantlets transferred to pot resumed growth, and their stems and leaves elongated and expanded in one month.Key words: Watermelon (Citrullus lanatus Thumb.), optimized system, regeneration, cotyledon explants, cotyledonary node

Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectric

Ge Metal-Oxide-Semiconductor (MOS) capacitors with LaON gate dielectric incorporating different Ti contents are fabricated and their electrical properties are measured and compared. It is found that Ti incorporation can increase the dielectric permittivity, and the higher the Ti content, the larger is the permittivity. However, the interfacial and gate-leakage properties become poorer as the Ti content increases. Therefore, optimization of Ti content is important in order to obtain a good trade-off among the electrical properties of the device. For the studied range of the Ti/La 2O 3 ratio, a suitable Ti/La 2O 3 ratio of 14.7% results in a high relative permittivity of 24.6, low interfacestate density of 3.1 × 10 11 eV -1 cm -2, and relatively low gate-leakage current density of 2.0×10 -3 Acm -2 at a gate voltage of 1 V. © The Author(s) 2010.published_or_final_versionSpringer Open Choice, 21 Feb 201

Development of a Broad-Spectrum Antiviral Agent with Activity Against Herpesvirus Replication and Gene Expression

Purpose: To evaluate the broad-spectrum antiviral activity of peptide H9 (H9) in vitro in order to gain insight into its underlying molecular mechanisms.Method: Antiviral activity against Herpes simplex virus type 1 (HSV-1) was determined using thiazolyl blue (MTT) assay. Polymerase Chain Reaction (PCR) was employed to assay H9 antiviral activity against human cytomegalovirus (HCMV) and Epstein-Barr virus (EBV). The inhibitory effect of H9 on the replication of these viral genes including early genes was assayed by real time-Ppolymerase chain reaction (RT-PCR) and Western blot.Results: H9 possessed significant inhibitory effect on the four different herpesviruses with 50 % inhibitory concentration (IC50) of 1.21 ng/mL (HSV-1). AD169 infection was strongly inhibited with an EC50 value of 0.46 ng/ml. The anti-herpesviral activity of H9 was dose-dependent. The peptide acted primarily during the early stage of infection by detection of the early genes.Conclusion: The results demonstrate that H9 can inhibit the infection of HSV-1, EBV and HCMV. Furthermore, H9 has a broad-spectrum anti-herpesviral effect in vitro based on targeted killing of infected cells expressing genes.Keywords: Antagonist, Trapping receptor/ligand, Broad-spectrum, Anti-herpesvirus, H9 peptide, Gene expressio

Optimization of N content for higk-k LaTiON gate dielectric of Ge MOS capacitor

Thin LaTiON gate dielectric is deposited on Ge (100) substrate by reactive co-sputtering of La 2O 3 and Ti targets under different Ar/N 2 ratios of 24/3, 24/6, 24/12, and 24/18, and their electrical properties are investigated and compared. Results show that the LaTiON gate-dielectric Ge MOS capacitor prepared at an Ar/N 2 ratio of 24/6 exhibits highest relative permittivity, smallest capacitance equivalent thickness, and best electrical characteristics, including low interface-state density, small C-V hysteresis and low gate leakage current. This is attributed to the fact that a suitable N content in LaTiON can effectively suppress the growth of low-k GeO x interfacial layer between LaTiON and Ge substrate.published_or_final_versionThe IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) 2009, Xi'an, China, 25-27 December 2009. In Proceedings of EDSSC, 2009, p. 225-22

A compact threshold-voltage model of MOSFETs with stack high-k gate dielectric

In this paper, a compact threshold-voltage model is developed for stack high-k gate-dielectric MOSFET with a thin interiayer. The simulated results are in good agreement with 2-D simulations. The influences of k value of the interlayer on threshold behaviors are investigated in detail. A low-k interlayer can effectively improve the threshold-voltage behaviors. Furthermore, the ratio of low-k interiayer EOT (equivalent oxide thickness) to high-k layer EOT is optimized by considering both threshold-voltage roll-off and gate leakage current. ©2009 IEEE.published_or_final_versionThe IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2009), Xian, China, 25-27 December 2009. In Proceedings of EDSSC, 2009, p. 236-23