Innovative biofilm inhibition and anti-microbial behavior of molybdenum sulfide nanostructures generated by microwave-assisted solvothermal route

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Study on the formulation of green/eco thick film piezo resistive paste for strain gauge application

Thick film piezo resistors, such as strain gauges fabricated using screen printing technology, are widely used for pressure-sensing applications. This paper reports the study of RuO2-based piezoresistive pastes formulation using lead-free glass frits for their potential application for strain gauges. Thermal analysis (TG/DTA) of the prepared glass frit and piezo resistor paste composition was performed to understand the thermal behavior of the paste and the glass transition temperature of the glass frit. The XRD patterns of the films revealed no variation in the conductive phase concentration concerning the firing temperature. SEM analysis of the glass frit powders and the RuO2 powder show submicron-sized agglomerated particles. Electrical measurements showed that the samples fired at 750 ​°C have high gauge factor values (GFL ​= ​18.08, GFT= 12.50), indicating that this is the most suitable firing temperature to achieve the high gauge factor in the present study

Thermally switchable metamaterial absorber with a VO2 ground plane

A tri-layer metamaterial absorber, composed of a metal structure/dielectric spacer/vanadium dioxide (VO2) ground plane, is shown to switch reversibly between reflective and absorptive states as a function of temperature. The VO2 film, which changes its conductivity by four orders of magnitude across a insulator-metal transition at about 68 degrees C, enables the switching by forming a resonant absorptive structure at high temperatures while being inactive at low temperatures. The fabricated metamaterial shows a modulation of the reflectivity levels of 58% at a frequency of 22.5 THz and 57% at a frequency of 34.5 THz. (C) 2015 Elsevier B.V. All rights reserved

Synthesis and characterization of indium-doped ZnO nanoparticles by coprecipitation method for highly photo-responsive UV light sensors

In this investigation, we employed a cost-efficient co-precipitation technique to synthesize nanostructures of Indium-doped ZnO, incorporating varying percentages of Indium (0.25 %, 0.5 %, 1 %, 2 %, and 4 %) into the ZnO lattice. These Indium atoms were introduced either by replacing oxygen (O2) or occupying tetrahedral interstitial spaces within the structure. The resultant materials exhibited an average crystal size ranging from approximately 5 to 10 nm and displayed a highly crystalline nature. The UV–visible spectroscopy of these synthesized materials, revealing an excitation spectrum spanning 380 nm–395 nm. Photoluminescence measurements showed two distinct emission peaks at 390 nm and 471 nm, originates from the recombination of the free excitons through an exciton-exciton collision process and the presence of defects or impurities in the In–ZnO nanostructures. Defects in the crystal lattice, such as oxygen vacancies or interstitial defects, can create energy levels within the bandgap. Subsequently, we evaluated the suitability of these Indium-doped ZnO nanostructures for light sensor applications. Response and recovery times to infrared (IR), visible, and ultraviolet (UV) light was recorded. Remarkably, the nanostructures exhibited exceptional response and recovery times, in UV light compared to their performance with IR and visible light. This significant performance of synthesized materials in UV light shows the cost-effective co-precipitation method in fabricating Indium-doped ZnO nanostructures for UV light sensing applications