Investigation of the Effects of the Multiplication Area Shape on the Operational Parameters of InGaAs/InAlAs SPADs

A 2D model of an InGaAs/InAlAs single photon avalanche photodiode has been developed. The influence of the active area structure in the multiplication region on the diode's operating parameters has been studied. It was found that changing the diameter of the structure's active region leads to a change in the dark current in the linear part of the current-voltage curve and a change in the breakdown voltage. Reducing the diameter of the active region from 25 $\mu$m to 10 $\mu$m allowed decreasing the dark current in the linear mode by about $10$ dB. It has been shown that the quality of the SPAD device can be assessed by knowing the avalanche breakdown voltage and the overall current-voltage curve plot if we consider structures with the same multiplication region thickness and different remaining layers. The higher the breakdown voltage, the better the structure's quality due to smaller local increases in the field strength. Following this statement, we conclude that for further use in single-photon detectors, it is reasonable to pick specific SPADs from a batch on the sole basis of their current-voltage curves

Equivalence principle and experimental tests of gravitational spin effects

We study the possibility of experimental testing the manifestations of equivalence principle in spin-gravity interactions. We reconsider the earlier experimental data and get the first experimental bound on anomalous gravitomagnetic moment. The spin coupling to the Earth's rotation may also be explored at the extensions of neutron EDM and g-2 experiments. The spin coupling to the terrestrial gravity produces a considerable effect which may be discovered at the planned deuteron EDM experiment. The Earth's rotation should also be taken into account in optical experiments on a search for axionlike particles.Comment: 12 pages, version to appear in Physical Review

Dead time duration and active reset influence on the afterpulse probability of InGaAs/InP SPAD based SPDs

We perform the detailed study of the afterpulse probability's dependence in the InGaAs/InP sine-gated SPAD on the dead time and the used approach for its implementation. We have found that the comparator's simple latching can significantly reduce afterpulses' probability, even without using a dead time pulse that lowers the diode bias voltage. We have found that with a low probability of afterpulse ( 10 mus), it is sufficient to use a circuit with latching of the comparator, which will significantly simplify the development of an SPD device for applications in which such parameters are acceptable. We also proposed a precise method for measuring and the afterpulse and presented a model describing the recurrent nature of this effect. We have shown that it should not use a simple model to describe the afterpulse probability due to rough underlying physical processes. A second-order model is preferable

Current states and superconductivity

The work is aimed at constructing the theory of current states, studying into relationship between dielectric correlations and superconductivity. Description of a new type of magnetoordered crystals - toroid magnetics - is given. A model of abnormally heavy diamagnetism of non-homogeneous toroidal magnetics is proposed. The model of separation into phases induced by superconductivity is constructed. Interzone model of electronic mechanism of superconductivity in the vicinity of the dielectric instability point is proposedAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio

Non-Hermitian Hamiltonians and Quantum Transport in Multi-Terminal Conductors

We study the transport properties of multi-terminal Hermitian structures within the non-equilibrium Green’s function formalism in a tight-binding approximation. We show that non-Hermitian Hamiltonians naturally appear in the description of coherent tunneling and are indispensable for the derivation of a general compact expression for the lead-to-lead transmission coefficients of an arbitrary multi-terminal system. This expression can be easily analyzed, and a robust set of conditions for finding zero and unity transmissions (even in the presence of extra electrodes) can be formulated. Using the proposed formalism, a detailed comparison between three- and two-terminal systems is performed, and it is shown, in particular, that transmission at bound states in the continuum does not change with the third electrode insertion. The main conclusions are illustratively exemplified by some three-terminal toy models. For instance, the influence of the tunneling coupling to the gate electrode is discussed for a model of quantum interference transistor. The results of this paper will be of high interest, in particular, within the field of quantum design of molecular electronic devices