Selective deposition of Ta 2 O 5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps

International audienceIn this paper, a new route for a selective deposition of thin oxide by atomic layer deposition is discussed. The proposed process is using super cycles made of an additional plasma etching step in a standard plasma enhanced atomic layer deposition (PEALD) process. This allows the selective growth of a thin oxide on a metal substrate without a specific surface deactivation by means of self assembled monolayer. It is shown that adding a small amount of NF3 etching gas to an oxygen plasma gas every eight cycles of the PEALD process helps to fully remove the Ta2O5 layer on Si and/or SiO2 surface while keeping few nanometers of Ta2O5 on the TiN substrate. NF3 addition is also used to increase the incubation time before Ta2O5 growth on Si or SiO2 substrate. In this way, a selective deposition of Ta2O5 on the TiN substrate is obtained with properties (density, leakage current…) similar to the ones obtained in a conventional PEALD mode. Hence, the authors demonstrate that a future for selective deposition could be a process using both PEALD and atomic layer etching

Elaboration Strategies for Topographically Selective Deposition (TSD) on 3D structures

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In-situ stripping of native SiO2 for Area Selective Deposition (ASD) of TiN during Plasma Atomic Layer Deposition (PEALD)

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Area selective deposition of TiO 2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme

International audienceA selective deposition process for bottom-up approach was developed in a modified plasma enhanced atomic layer deposition (PEALD) sequence. As a case study, a very standard PEALD TiO2 using organo-amine precursor and O2 plasma is chosen. The metal oxide selectivity is obtained on TiN versus Si-based surfaces by adding one etching/passivation plasma step of fluorine every n cycles in a PEALD-TiO2 process. Fluorine gas NF3 allows (1) to etch the TiO2 layer on Si, SiO2, or SiN surface while keeping few nanometers of TiO2 on the TiN substrate and (2) to increase the incubation time on the Si-based surface. Quasi-in situ XPS measurements were used to study the incubation time between Si/SiO2 substrates versus TiN substrate. Results show that Si–F bonds are formed on Si and lock the surface reactions. The effectiveness of this atomic layer selective deposition method was successfully tested on a 3D patterned substrate with the metal oxide deposited only at the edge of metal lines

Plasma deposition—Impact of ions in plasma enhanced chemical vapor deposition, plasma enhanced atomic layer deposition, and applications to area selective deposition

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