Thermal Stability of Poly(3,4-ethylenedioxytiophene)-Polystyrenesulfonic Acid Electrical Properties,

Date du colloque : 07/2008International audienc

Role of ITO and PEDOT:PSS in Stability / Degradation of Polymer: Fullerene Bulk Heterojonctios Solar Cells

Date du colloque : 06/2008</p

Structural and electrical properties of zinc oxides thin films prepared by thermal oxidation

We report on zinc oxide (ZnO) thin films (d = 55–120 nm) prepared by thermal oxidation, at 623 K, of metallic zinc films, using a flash-heating method. Zinc films were deposited in vacuum by quasi-closed volume technique onto unheated glass substrates in two arrangements: horizontal and vertical positions relative to incident vapour. Depending on the preparation conditions, both quasi-amorphous and (0 0 2) textured polycrystalline ZnO films were obtained. The surface morphologies were characterized by atomic force microscopy and scanning electron microscopy. By in situ electrical measurements during two heating–cooling cycles up to a temperature of 673 K, an irreversible decrease of electrical conductivity of as flash-oxidized Zn films was revealed. The influence of deposition arrangement and oxidation conditions on the structural, morphological and electrical properties of the ZnO films is discussed

Structural and optical properties of ZnO thin films deposited onto ITO/glass substrates

ZnO films were prepared by post deposition thermal oxidation in the ambient atmosphere of metallic Zn films (d = 100–170 nm) vacuum evaporated onto unheated indium tin oxide (ITO)-coated glass substrates. To study the effect of the substrate position during the Zn film deposition on the microstructure and optical properties (transmittance, reflectance and absorbance) of as obtained ZnO films, two set of Zn samples simultaneously deposited onto horizontally and obliquely arranged substrates were prepared. The as obtained ZnO films had a polycrystalline wurtzite structure, those obtained from normally deposited Zn films having a higher c-axis preferred orientation and a lower optical transmittance in the visible wavelength range. The optical band-gap was found to be of 3.14 eV for oxidized normally deposited virgin Zn films and of 3.16 eV for those obliquely deposited

Thermal stability of poly(3,4-ethylenedioxythiophene)–polystyrenesulfonic acid films electrical properties

Present research on organic solar cells and organic light emitting diodes is based on devices using frequently films of poly(3,4-ethylenedioxythiophene)–polystyrenesulfonic acid (PEDOT–PSS). In this paper we present the results of thermal treatments in the open atmosphere on morphological, optical and electrical properties of PEDOT-PSS films. Studies on electrical conductivity and transport mechanisms were carried out on thin films in the temperature range 300–400 K in the dark and under illumination

Optical characterization of vacuum evaporated CdZnTe thin films deposited by a multilayer method

International audienc

Preparation and characterization of ZnO thin films prepared by thermal oxidation of evaporated Zn thin films

International audienc

The influence of preparation conditions on the electrical and optical properties of oxidized indium thin films

cited By 27Highly conductive indium oxide thin films (ρ = 5 × 10-3 Ω cm) have been prepared by thermal oxidation in an open atmosphere of indium films deposited in vacuum by evaporation. The rate of indium film deposition was high (5 Å s-1), and the oxidation has been carried out by exposing the samples to the atmosphere directly at high temperature (500°C) for different times. Structural, optical and electrical properties of these samples were investigated. Films exhibit a (111) preferred orientation, The value of the transmittance coefficient in the visible region of the spectrum was low (50%) but, concerning the electrical properties, an interesting behaviour was observed: at temperatures above room temperature the electrical resistance depends on the sense of the electrical current flow. © 2000 Elsevier Science S.A. All rights reserved

Influence of oxidation conditions on the properties of indium oxide thin films

cited By 49Indium oxide (In2O3) thin films have been prepared by thermal evaporation of indium in vacuum on a glass substrate at room temperature, followed by thermal oxidation in air. It was experimentally established that the heating velocity during the oxidation process has a strong influence on the electrical and optical properties of films as prepared. The temperature was increased from room temperature to 450 °C, with velocities ranging between 0.1 °C/s and 0.5 °C/s. In2O3 thin films as obtained have been examined for optical transparency function on wavelength. The calculated values of optical band gap range between 2.99 and 3.31 eV. Electrical conductivity measurements have also been carried out on the above oxide thin films as a function of temperature. Both the electrical and optical studies showed that In2O3 thin films with higher transparency and electrical conductivity are obtained at higher oxidation velocities. Also, the experimental results show linear dependences of transmission coefficient on the oxidation velocity