Radiation induced zero-resistance states in GaAs/AlGaAs heterostructures: Voltage-current characteristics and intensity dependence at the resistance minima

High mobility two-dimensional electron systems exhibit vanishing resistance over broad magnetic field intervals upon excitation with microwaves, with a characteristic reduction of the resistance with increasing radiation intensity at the resistance minima. Here, we report experimental results examining the voltage - current characteristics, and the resistance at the minima vs. the microwave power. The findings indicate that a non-linear V-I curve in the absence of microwave excitation becomes linearized under irradiation, unlike expectations, and they suggest a similarity between the roles of the radiation intensity and the inverse temperature.Comment: 3 color figures; publishe

Classification of Higher Dimensional Spacetimes

We algebraically classify some higher dimensional spacetimes, including a number of vacuum solutions of the Einstein field equations which can represent higher dimensional black holes. We discuss some consequences of this work.Comment: 16 pages, 1 Tabl

Quantum Hall Effect in a Two-Dimensional Electron System Bent by 90 Degrees

Using a new MBE growth technique, we fabricate a two-dimensional electron system which is bent around an atomically sharp 90 degree corner. In the quantum Hall regime under tilted magnetic fields, we can measure equilibration between both co- and counter-propagating edge channels of arbitrary filling factor ratio. We present here 4-point magnetotransport characterization of the corner junction with filling factor combinations which can all be explained using the standard Landauer-Buttiker edge channel picture. The success of this description confirms the realization of a new type of quantum Hall edge geometry.Comment: 4 pages, figures included Typographical errors corrected, reference adde

Novel metallic and insulating states at a bent quantum Hall junction

A non-planar geometry for the quantum Hall (QH) effect is studied, whereby two quantum Hall (QH) systems are joined at a sharp right angle. When both facets are at equal filling factor nu the junction hosts a channel with non-quantized conductance, dependent on nu. The state is metallic at nu = 1/3, with conductance along the junction increasing as the temperature T drops. At nu = 1, 2 it is strongly insulating, and at nu = 3, 4 shows only weak T dependence. Upon applying a dc voltage bias along the junction, the differential conductance again shows three different behaviors. Hartree calculations of the dispersion at the junction illustrate possible explanations, and differences from planar QH structures are highlighted.Comment: 5 pages, 4 figures, text + figs revised for clarit