In-situ electrochemical fabrication of natural contacts on single nanowires

We report a template-based in-situ electrochemical method for fabricating natural electric contacts on single nanowires using a pair of cross-patterned electrodes. Such electric contacts are highly stable upon thermal cycling between room temperature and milli-Kelvin temperatures. Direct imaging of the single-nanowire contacts using scanning electron microscopy is also demonstrated.Comment: 13 pages, 4 figure

Electrical conduction of silicon oxide containing silicon quantum dots

Current-voltage measurements have been made at room temperature on a Si-rich silicon oxide film deposited via Electron-Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) and annealed at 750 - 1000$^\circ$C. The thickness of oxide between Si quantum dots embedded in the film increases with the increase of annealing temperature. This leads to the decrease of current density as the annealing temperature is increased. Assuming the Fowler-Nordheim tunneling mechanism in large electric fields, we obtain an effective barrier height $\phi_{eff}$ of $\sim$ 0.7 $\pm$ 0.1 eV for an electron tunnelling through an oxide layer between Si quantum dots. The Frenkel-Poole effect can also be used to adequately explain the electrical conduction of the film under the influence of large electric fields. We suggest that at room temperature Si quantum dots can be regarded as traps that capture and emit electrons by means of tunneling.Comment: 14 pages, 5 figures, submitted to J. Phys. Conden. Mat

In Situ Imaging of the Conducting Filament in a Silicon Oxide Resistive Switch

The nature of the conducting filaments in many resistive switching systems has been elusive. Through in situ transmission electron microscopy, we image the real-time formation and evolution of the filament in a silicon oxide resistive switch. The electroforming process is revealed to involve the local enrichment of silicon from the silicon oxide matrix. Semi-metallic silicon nanocrystals with structural variations from the conventional diamond cubic form of silicon are observed, which likely accounts for the conduction in the filament. The growth and shrinkage of the silicon nanocrystals in response to different electrical stimuli show energetically viable transition processes in the silicon forms, offering evidence to the switching mechanism. The study here also provides insights into the electrical breakdown process in silicon oxide layers, which are ubiquitous in a host of electronic devices.Comment: 7 pages, 7 figure

Realization of an Energetic Hub Based on a High-Performance Dish Stirling Plant

In this work the realization of an energetic hub based on a high-performances dish Stirling system, at the DEIM of the University of Palermo, is presented. The realized system is the first top rated solar thermodynamic plant directly connected to the national electric grid. The connection permits the electricity injection into the grid and allows to access to national renewable energy incentives regime. The system realization was possible thanks to an international cooperation between the University of Palermo and the private company Horizon S.r.l., official partner of Ripasso Energy AB, owner of this technology. Initial data of the plant energy production and the foreseen improvements for the hybridization of the system and its integration with an electrical and geothermal storage system are also presented