Optimization of laser-plasma injector via beam loading effects using ionization-induced injection

Simulations of ionization induced injection in a laser driven plasma wakefield show that high-quality electron injectors in the 50-200 MeV range can be achieved in a gas cell with a tailored density profile. Using the PIC code Warp with parameters close to existing experimental conditions, we show that the concentration of $\mathrm{N_2}$ in a hydrogen plasma with a tailored density profile is an efficient parameter to tune electron beam properties through the control of the interplay between beam loading effects and varying accelerating field in the density profile. For a given laser plasma configuration, with moderate normalized laser amplitude, $a_0=1.6$ and maximum electron plasma density, $n_{e0}=4\times 10^{18}\,\mathrm{cm^{-3}}$, the optimum concentration results in a robust configuration to generate electrons at 150~MeV with a rms energy spread of 4\% and a spectral charge density of 1.8~pC/MeV.Comment: 13 pages, 10 figure

Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs and 4H-SiC semiconductors under light illumination at cryogenic temperatures

We report on extremely sensitive measurements of changes in the microwave properties of high purity non-intentionally-doped single-crystal semiconductor samples of gallium phosphide, gallium arsenide and 4H-silicon carbide when illuminated with light of different wavelengths at cryogenic temperatures. Whispering gallery modes were excited in the semiconductors whilst they were cooled on the coldfinger of a single-stage cryocooler and their frequencies and Q-factors measured under light and dark conditions. With these materials, the whispering gallery mode technique is able to resolve changes of a few parts per million in the permittivity and the microwave losses as compared with those measured in darkness. A phenomenological model is proposed to explain the observed changes, which result not from direct valence to conduction band transitions but from detrapping and retrapping of carriers from impurity/defect sites with ionization energies that lay in the semiconductor band gap. Detrapping and retrapping relaxation times have been evaluated from comparison with measured data.Comment: 7 pages, 6 figure

Switching the magnetic configuration of a spin valve by current induced domain wall motion

We present experimental results on the displacement of a domain wall by injection of a dc current through the wall. The samples are 1 micron wide long stripes of a CoO/Co/Cu/NiFe classical spin valve structure. The stripes have been patterned by electron beam lithography. A neck has been defined at 1/3 of the total length of the stripe and is a pinning center for the domain walls, as shown by the steps of the giant magnetoresistance curves at intermediate levels (1/3 or 2/3) between the resistances corresponding to the parallel and antiparallel configurations. We show by electric transport measurements that, once a wall is trapped, it can be moved by injecting a dc current higher than a threshold current of the order of magnitude of 10^7 A/cm^2. We discuss the different possible origins of this effect, i.e. local magnetic field created by the current and/or spin transfer from spin polarized current.Comment: 3 pages, 3 figure

Modified permittivity observed in bulk Gallium Arsenide and Gallium Phosphide samples at 50 K using the Whispering Gallery mode method

Whispering Gallery modes in bulk cylindrical Gallium Arsenide and Gallium Phosphide samples have been examined both in darkness and under white light at 50 K. In both samples we observed change in permittivity under light and dark conditions. This results from a change in the polarization state of the semiconductor, which is consistent with a free electron-hole creation/recombination process. The permittivity of the semiconductor is modified by free photocarriers in the surface layers of the sample which is the region sampled by Whispering Gallery modes.Comment: 8 pages, 3 figure

Switching a spin-valve back and forth by current-induced domain wall motion

We have studied the current-induced displacement of a domain wall (DW) in the permalloy (Py) layer of a Co/Cu/Py spin valve structure at zero and very small applied field. The displacement is in opposite direction for opposite dc currents, and the current density required to move DW is only of the order of 10^6 A/cm^2. For H = 3 Oe, a back and forth DW motion between two stable positions is observed. We also discuss the effect of an applied field on the DW motion.Comment: 4 pages, 3 figure

Coupling efficiency for phase locking of a spin transfer oscillator to a microwave current

The phase locking behavior of spin transfer nano-oscillators (STNOs) to an external microwave signal is experimentally studied as a function of the STNO intrinsic parameters. We extract the coupling strength from our data using the derived phase dynamics of a forced STNO. The predicted trends on the coupling strength for phase locking as a function of intrinsic features of the oscillators i.e. power, linewidth, agility in current, are central to optimize the emitted power in arrays of mutually coupled STNOs

Dynamics of two coupled vortices in a spin valve nanopillar excited by spin transfer torque

We investigate the dynamics of two coupled vortices driven by spin transfer. We are able to independently control with current and perpendicular field, and to detect, the respective chiralities and polarities of the two vortices. For current densities above $J=5.7*10^7 A/cm^2$, a highly coherent signal (linewidth down to 46 kHz) can be observed, with a strong dependence on the relative polarities of the vortices. It demonstrates the interest of using coupled dynamics in order to increase the coherence of the microwave signal. Emissions exhibit a linear frequency evolution with perpendicular field, with coherence conserved even at zero magnetic field

Laser-driven plasma waves in capillary tubes

The excitation of plasma waves over a length of up to 8 centimeters is, for the first time, demon- strated using laser guiding of intense laser pulses through hydrogen filled glass capillary tubes. The plasma waves are diagnosed by spectral analysis of the transmitted laser radiation. The dependence of the spectral redshift, measured as a function of filling pressure, capillary tube length and incident laser energy, is in excellent agreement with simulation results. The longitudinal accelerating field inferred from the simulations is in the range 1 -10 GV/m

Origin of the spectral linewidth in non linear oscillators based on MgO tunnel junctions

We demonstrate the strong impact of the oscillator agility on the line broadening by studying spin transfer induced microwave emission in MgO-based tunnel junctions with current. The linewidth is almost not affected by decreasing the temperature. At very low currents, a strong enhancement of the linewidth at low temperature is attributed to an increase of the non linearity, probably due to the field-like torque. Finally we evidence that the noise is not dominated by thermal fluctuations but rather by the chaotization of the magnetization system induced by the spin transfer torque.Comment: 12 pages, 3 figures, published in Phys. Rev. B 80, 060404 (2009