2 research outputs found
Hf-based high-k dielectrics for p-Ge MOS gate stacks
The physical and electrical properties of the gate stack high-k/Al2O3/GeO2/p-Ge were studied in detail, where the high-k is either HfO2 or alloyed HfO2 (HfZrOy, HfGdOx, or HfAlOx). Electrical measurements combined with x-ray photoelectron spectroscopy chemical bonding analysis and band alignment determination were conducted in order to assess the suitability of hafnium-based high-k for this kind of gate stacks, with emphasis on low density of interface states and border traps. HfAlOx was found to be the most promising high-k from those studied. The authors have also found that the current- voltage trends for the various systems studied can be explained by the band alignment of the samples obtained by our x-ray photoelectron spectroscopy analysis.Fil: Fadida, Sivan. Technion - Israel Institute of Technology; IsraelFil: Palumbo, FĂ©lix Roberto Mario. Technion - Israel Institute of Technology; Israel. Consejo Nacional de Investigaciones CientĂficas y TĂ©cnicas; ArgentinaFil: Nyns, Laura. Imec; BĂ©lgicaFil: Lin, Dennis. Imec; BĂ©lgicaFil: Van Elshocht, Sven. Imec; BĂ©lgicaFil: Caymax, Matty. Imec; BĂ©lgicaFil: Eizenberg, Moshe. Technion - Israel Institute of Technology; Israe