Evidence for defect-mediated tunneling in hexagonal boron nitride-based junctions

We investigate tunneling in metal-insulator-metal junctions employing few atomic layers of hexagonal boron nitride (hBN) as the insulating barrier. While the low-bias tunnel resistance increases nearly exponentially with barrier thickness, subtle features are seen in the current-voltage curves, indicating marked influence of the intrinsic defects present in the hBN insulator on the tunneling transport. In particular, single electron charging events are observed, which are more evident in thicker-barrier devices where direct tunneling is substantially low. Furthermore, we find that annealing the devices modifies the defect states and hence the tunneling signatures.Comment: 5 pages, 5 figure

Coulomb Drag in the Extreme Quantum Limit

Coulomb drag resulting from interlayer electron-electron scattering in double layer 2D electron systems at high magnetic field has been measured. Within the lowest Landau level the observed drag resistance exceeds its zero magnetic value by factors of typically 1000. At half-filling of the lowest Landau level in each layer (nu = 1/2) the data suggest that our bilayer systems are much more strongly correlated than recent theoretical models based on perturbatively coupled composite fermion metals.Comment: 4 pages, 4 figure

Spin and the Coulomb Gap in the Half-Filled Lowest Landau Level

The Coulomb gap observed in tunneling between parallel two-dimensional electron systems, each at half filling of the lowest Landau level, is found to depend sensitively on the presence of an in-plane magnetic field. Especially at low electron density, the width of the Coulomb gap at first increases sharply with in-plane field, but then abruptly levels off. This behavior appears to coincide with the known transition from partial to complete spin polarization of the half-filled lowest Landau level. The tunneling gap therefore opens a new window onto the spin configuration of two-dimensional electron systems at high magnetic field.Comment: 6 pages, 4 postscript figures. Minor changes. To appear in Physical Review

Evidence for a Goldstone Mode in a Double Layer Quantum Hall System

The tunneling conductance between two parallel 2D electron systems has been measured in a regime of strong interlayer Coulomb correlations. At total Landau level filling $\nu_T=1$ the tunnel spectrum changes qualitatively when the boundary separating the compressible phase from the ferromagnetic quantized Hall state is crossed. A huge resonant enhancement replaces the strongly suppressed equilibrium tunneling characteristic of weakly coupled layers. The possible relationship of this enhancement to the Goldstone mode of the broken symmetry ground state is discussed.Comment: 4 pages, 3 figures, 2 minor typeos fixe

Interlayer tunneling in double-layer quantum Hall pseudo-ferromagnets

We show that the interlayer tunneling I--V in double-layer quantum Hall states displays a rich behavior which depends on the relative magnitude of sample size, voltage length scale, current screening, disorder and thermal lengths. For weak tunneling, we predict a negative differential conductance of a power-law shape crossing over to a sharp zero-bias peak. An in-plane magnetic field splits this zero-bias peak, leading instead to a ``derivative'' feature at $V_B(B_{||})=2\pi\hbar v B_{||}d/e\phi_0$, which gives a direct measure of the dispersion of the Goldstone mode corresponding to the spontaneous symmetry breaking of the double-layer Hall state.Comment: 4 pgs. RevTex, submitted to Phys. Rev. Let

Separately contacted electron-hole double layer in a GaAs/AlxGa1−xAs heterostructure

We describe a method for creating closely spaced parallel two-dimensional electron and hole gases confined in 200 Å GaAs wells separated by a 200 Å wide AlxGa1−xAs barrier. Low-temperature ohmic contacts are made to both the electrons and holes, whose densities are individually adjustable between 10^(10)/cm^2 to greater than 10^(11)/cm^2

Evidence for a fractional quantum Hall state with anisotropic longitudinal transport

At high magnetic fields, where the Fermi level lies in the N=0 lowest Landau level (LL), a clean two-dimensional electron system (2DES) exhibits numerous incompressible liquid phases which display the fractional quantized Hall effect (FQHE) (Das Sarma and Pinczuk, 1997). These liquid phases do not break rotational symmetry, exhibiting resistivities which are isotropic in the plane. In contrast, at lower fields, when the Fermi level lies in the $N\ge2$ third and several higher LLs, the 2DES displays a distinctly different class of collective states. In particular, near half filling of these high LLs the 2DES exhibits a strongly anisotropic longitudinal resistance at low temperatures (Lilly et al., 1999; Du et al., 1999). These "stripe" phases, which do not exhibit the quantized Hall effect, resemble nematic liquid crystals, possessing broken rotational symmetry and orientational order (Koulakov et al., 1996; Fogler et al., 1996; Moessner and Chalker, 1996; Fradkin and Kivelson, 1999; Fradkin et al, 2010). Here we report a surprising new observation: An electronic configuration in the N=1 second LL whose resistivity tensor simultaneously displays a robust fractionally quantized Hall plateau and a strongly anisotropic longitudinal resistance resembling that of the stripe phases.Comment: Nature Physics, (2011

Numerical Investigation on Asymmetric Bilayer System at Integer Filling Factor

Deformation of the easy-axis ferromagnetic state in asymmetric bilayer systems are investigated numerically. Using the exact diagonalization the easy-axis to easy-plane ferromagnetic transition at total filling factor 3 or 4 is investigated. At still higher filling, novel stripe state in which stripes are aligned in the vertical direction occurs. The Hartree-Fock energies of relevant ordered states are calculated and compared.Comment: 4 pages, 6 figures, Proceedings of EP2DS-15, to appear in Physica

The Onset of Anisotropic Transport of Two-Dimensional Electrons in High Landau Levels: An Isotropic-to-Nematic Liquid Crystal Phase Transition?

The recently discovered anisotropy of the longitudinal resistance of two-dimensional electrons near half filling of high Landau levels is found to persist to much higher temperatures T when a large in-plane magnetic field B|| is applied. Under these conditions we find that the longitudinal resistivity scales quasi-linearly with B||/T. These observations support the notion that the onset of anisotropy at B||=0 does not reflect the spontaneous development of charge density modulations but may instead signal an isotropic-to-nematic liquid crystal phase transition.Comment: 5 pages, 4 figure

Electron Correlations in Partially Filled Lowest and Excited Landau Levels

The electron correlations near the half-filling of the lowest and excited Landau levels (LL's) are studied using numerical diagonalization. It is shown that in the low lying states electrons avoid pair states with relative angular momenta ${\cal R}$ corresponding to positive anharmonicity of the interaction pseudopotential $V({\cal R})$. In the lowest LL, the super-harmonic behavior of $V({\cal R})$ causes Laughlin correlations (avoiding pairs with ${\cal R}=1$) and the Laughlin-Jain series of incompressible ground states. In the first excited LL, $V({\cal R})$ is harmonic at short range and a different series of incompressible states results. Similar correlations occur in the paired Moore-Read $\nu={5\over2}$ state and in the $\nu={7\over3}$ and ${8\over3}$ states, all having small total parentage from ${\cal R}=1$ and 3 and large parentage from ${\cal R}=5$. The $\nu={7\over3}$ and ${8\over3}$ states are different from Laughlin $\nu={1\over3}$ and ${2\over3}$ states and, in finite systems, occur at a different LL degeneracy (flux). The series of Laughlin correlated states of electron pairs at $\nu=2+2/(q_2+2)={8\over3}$, ${5\over2}$, ${12\over5}$, and ${7\over3}$ is proposed, although only in the $\nu={5\over2}$ state pairing has been confirmed numerically. In the second excited LL, $V({\cal R})$ is sub-harmonic at short range and (near the half-filling) the electrons group into spatially separated larger $\nu=1$ droplets to minimize the number of strongly repulsive pair states at ${\cal R}=3$ and 5.Comment: 10 pages, 8 figures, submitted to PR