Bandgap engineering in semiconductor alloy nanomaterials with widely tunable compositions

Over the past decade, tremendous progress has been achieved in the development of nanoscale semiconductor materials with a wide range of bandgaps by alloying different individual semiconductors. These materials include traditional II-VI and III-V semiconductors and their alloys, inorganic and hybrid perovskites, and the newly emerging 2D materials. One important common feature of these materials is that their nanoscale dimensions result in a large tolerance to lattice mismatches within a monolithic structure of varying composition or between the substrate and target material, which enables us to achieve almost arbitrary control of the variation of the alloy composition. As a result, the bandgaps of these alloys can be widely tuned without the detrimental defects that are often unavoidable in bulk materials, which have a much more limited tolerance to lattice mismatches. This class of nanomaterials could have a far-reaching impact on a wide range of photonic applications, including tunable lasers, solid-state lighting, artificial photosynthesis and new solar cells

Improvement of critical current in MgB2/Fe wires by a ferromagnetic sheath

Transport critical current (Ic) was measured for Fe-sheathed MgB2 round wires. A critical current density of 5.3 x 10^4 A/cm^2 was obtained at 32K. Strong magnetic shielding by the iron sheath was observed, resulting in a decrease in Ic by only 15% in a field of 0.6T at 32K. In addition to shielding, interaction between the iron sheath and the superconductor resulted in a constant Ic between 0.2 and 0.6T. This was well beyond the maximum field for effective shielding of 0.2T. This effect can be used to substantially improve the field performance of MgB2/Fe wires at fields at least 3 times higher than the range allowed by mere magnetic shielding by the iron sheath. The dependence of Ic on the angle between field and current showed that the transport current does not flow straight across the wire, but meanders between the grains

Template epitaxial growth of thermoelectric Bi/BiSb superlattice nanowires by charge-controlled pulse electrodeposition

© The Electrochemical Society, Inc. 2009. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in The Journal of The Electrochemical Society, 156(9), 2009.Bi/BiSb superlattice nanowires (SLNWs) with a controllable and very small bilayer thickness and a sharp segment interface were grown by adopting a charge-controlled pulse electrodeposition. The deposition parameters were optimized to ensure an epitaxial growth of the SLNWs with a preferential orientation. The segment length and bilayer thickness of the SLNWs can be controlled simply by changing the modulating time, and the consistency of the segment length can be well maintained by our approach. The Bravais law in the electrodeposited nanowires is verified by the SLNW structure. The current–voltage measurement shows that the SLNWs have good electrical conductance, particularly those with a smaller bilayer thickness. The Bi/BiSb SLNWs might have excellent thermoelectric performances.National Natural Science Foundation of China and the National Major Project of Fundamental Research for Nanomaterials and Nanostructures

Contrast‐Aided Diagnostic Ultrasound Does Not Enhance Lung Metastasis in a Mouse Melanoma Tumor Model

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/135357/1/jum2005243349.pd