Multi-wavelength laser based on an arrayed waveguide grating and Sagnac loop reflectors monolithically integrated on InP

In this paper, a multi-wavelength laser monolithically integrated on InP is presented. A linear laser cavity is built between two integrated Sagnac loop reflectors, with an Arrayed Waveguide Grating (AWG) as frequency selective device, and Semiconductor Optical Amplifiers (SOA) as gain sections. The power is out coupled from the cavity using a side diffraction order of the AWG. Simultaneous laser operation is provided for four wavelengths/cavities in the device. The termination of the laser cavities with integrated Sagnac loop reflectors avoids using high reflection coating. Only anti-reflection coating is used in the output facet of the chip

InP monolithically integrated label swapper device for spectral amplitude coded optical packet networks

In this paper a label swapping device, for spectral amplitude coded optical packet networks, fully integrated using InP technology is presented. Compared to previous demonstrations using discrete component assembly, the device footprint is reduced by a factor of 105 and the operation speed is increased by a factor of 103. This is, to the best of our knowledge, the first demonstration of a totally integrated label swapping device

InP monolithically integrated label swapper device for spectral amplitude coded optical packet networks

In this paper a label swapping device, for spectral amplitude coded optical packet networks, fully integrated using InP technology is presented. Compared to previous demonstrations using discrete component assembly, the device footprint is reduced by a factor of 105 and the operation speed is increased by a factor of 103. This is, to the best of our knowledge, the first demonstration of a totally integrated label swapping device

Multi-wavelength laser based on an arrayed waveguide grating and Sagnac loop reflectors monolithically integrated on InP

In this paper, a multi-wavelength laser monolithically integrated on InP is presented. A linear laser cavity is built between two integrated Sagnac loop reflectors, with an Arrayed Waveguide Grating (AWG) as frequency selective device, and Semiconductor Optical Amplifiers (SOA) as gain sections. The power is out coupled from the cavity using a side diffraction order of the AWG. Simultaneous laser operation is provided for four wavelengths/cavities in the device. The termination of the laser cavities with integrated Sagnac loop reflectors avoids using high reflection coating. Only anti-reflection coating is used in the output facet of the chip