1,002 research outputs found
Raoult's Formalism in Understanding Low Temperature Growth of GaN Nanowires using Binary Precursor
Growth of GaN nanowires are carried out via metal initiated
vapor-liquid-solid mechanism, with Au as the catalyst. In chemical vapour
deposition technique, GaN nanowires are usually grown at high temperatures in
the range of 900-1100 ^oC because of low vapor pressure of Ga below 900 ^oC. In
the present study, we have grown the GaN nanowires at a temperature, as low as
700 ^oC. Role of indium in the reduction of growth temperature is discussed in
the ambit of Raoult's law. Indium is used to increase the vapor pressure of the
Ga sufficiently to evaporate even at low temperature initiating the growth of
GaN nanowires. In addition to the studies related to structural and vibrational
properties, optical properties of the grown nanowires are also reported for
detailed structural analysis.Comment: 24 pages, 7 figures, journa
The Social Networks of Rural Business Owners in East Central Alberta
Community/Rural/Urban Development,
Direct Evidence of Mg Incorporation Pathway in Vapor-Liquid-Solid Grown p-type Nonpolar GaN Nanowires
Doping of III-nitride based compound semiconductor nanowires is still a
challenging issue to have a control over the dopant distribution in precise
locations of the nanowire optoelectronic devices. Knowledge of the dopant
incorporation and its pathways in nanowires for such devices is limited by the
growth methods. We report the direct evidence of incorporation pathway for Mg
dopants in p-type nonpolar GaN nanowires grown via vapour-liquid-solid (VLS)
method in a chemical vapour deposition technique for the first time. Mg
incorporation is confirmed using X-ray photoelectron (XPS) and electron energy
loss spectroscopic (EELS) measurements. Energy filtered transmission electron
microscopic (EFTEM) studies are used for finding the Mg incorporation pathway
in the GaN nanowire. Photoluminescence studies on Mg doped GaN nanowires along
with the electrical characterization on heterojunction formed between nanowires
and n-Si confirm the activation of Mg atoms as p-type dopants in nonpolar GaN
nanowires.Comment: 29 pages, 6 figures, journa
- âŠ