Conformality of Al2O3 deposited by thermal, plasma-enhanced and ozone-based atomic layer deposition

C

Thin film solid-state reactions forming carbides as contact materials for carbon-containing semiconductors

A

Stability of switchable SmS for piezoresistive applications

In this work samarium sulfide thin films have been deposited by using e-beam evaporation under H2S atmosphere. Optical and structural properties were studied in several environments. The stability in several environments allows further processing into piezoelectronic devices

Atomic layer deposition of aluminum phosphate based on the plasma polymerization of trimethyl phosphate

Aluminum phosphate thin films were deposited by plasma-assisted atomic layer deposition (ALD) using a sequence of trimethyl phosphate (TMP, Me3PO4) plasma, O-2 plasma, and trimethylaluminum (TMA, Me3Al) exposures. In situ characterization was performed, including spectroscopic ellipsometry, optical emission spectroscopy, mass spectrometry and FTIR. In the investigated temperature region between 50 and 320 degrees C, nucleation delays were absent and linear growth was observed, with the growth per cycle (GPC) being strongly dependent on temperature. The plasma polymerization of TMP was found to play an important role in this process, resulting in CVD-like behavior at low temperatures and ALD-like behavior at high temperatures. Films grown at 320 degrees C had a GPC value of 0.37 nm/cycle and consisted of amorphous aluminum pyrophosphate (Al4P6O21). They could be crystallized to triclinic AlPO4 (tridymite) by annealing to 900 degrees C, as evidenced by high-temperature XRD measurements. The use of a TMP plasma might open up the possibility of depositing many other metal phosphates by combining it with appropriate organometallic precursors