Optimisation of CdTe electrodeposition voltage for development of CdS/CdTe solar cells

Cadmium telluride (CdTe) thin films have been deposited on glass/conducting glass (FTO) substrates using low-cost two electrode system and aqueous electrodeposition method. The glass/FTO substrates were used to grow the CdTe layers at different deposition voltages. The structural, electrical, optical and morphological properties of the resulting films have been characterized using X-ray diffraction (XRD), Photoelectrochemical (PEC) cell measurements, optical absorption spectroscopy and Scanning Electron Microscopy (SEM). The XRD results indicate that at voltages less than or higher than 1.576 V, crystallinity is poor due to presence of two phases. When CdTe is grown at 1.576 V, the composition is stoichiometric, and the (111) peak has the highest intensity in the XRD diffractogram indicating a high degree of crystallinity. SEM studies showed that all layers had pin-holes and gaps between the grains. These openings seem to be more common in the samples grown at voltages away from the stoichiometric voltage (1.576 V). The linear I–V curves of glass/FTO/CdS/CdTe/Au structures fabricated using stoichiometric CdTe showed efficiency of 10.1 % under AM 1.5 illuminatio

Electro-plating and characterisation of cadmium sulphide thin films using ammonium thiosulphate as the sulphur source

Cadmium sulphide (CdS) thin films have been successfully prepared from an aqueous electrolyte bath containing CdCl2 and ammonium thiosulphate ((NH4)2S2O3) using electrodeposition technique. The structural, compositional, optical, morphological and electrical properties of these thin films have been characterized using X-ray diffraction (XRD), Raman spectroscopy, energy dispersive X-ray spectroscopy, UV–Vis spectrophotometry, scanning electron microscopy (SEM), atomic force microscopy (AFM), photoelectrochemical cell and D.C. current–voltage (I–V) measurements. The optimum deposition cathodic potential has been observed at 1,455 mV, in a 2-electrode system with respect to carbon anode. Structural analysis using XRD shows a mixture of hexagonal and cubic phases in the as-deposited CdS samples and a phase transformation to the hexagonal structure occurred after heat treatment at 400 °C for 20 min. Optical studies demonstrate an improvement in the band edge, producing 2.42 eV for the band gap of the films after heat treatment. The heat treated CdS thin films show better transmission for wavelengths longer than 500 nm. SEM and AFM show that the heat-treated samples are more uniform, smoother and have larger grain size. Electrical studies confirm that the CdS thin films have n-type electrical conductivity and heat treated CdS thin films have resistivities of the order of 105 Ω cm

Electrodeposition of CdTe thin films using nitrate precursor for applications in solar cells

Cadmium telluride (CdTe) thin films have been electrodeposited (ED) on glass/fluorine-doped tin oxide (FTO) substrates using simplified two-electrode system in acidic and aqueous solution containing Cd(NO3)2 4H2O and TeO2. The X-ray diffraction (XRD), optical absorption, photoelectrochemical (PEC) cell measurements, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) have been carried out to study the structural, optical, electrical and morphological properties of the CdTe layers. The XRD study shows that the ED-CdTe layers are polycrystalline with cubic crystal structure. Results obtained from optical absorption reveal that the bandgaps of the as-deposited and the CdCl2 treated CdTe layers are in the ranges ~1.50 to ~1.54 eV and ~1.46 to ~1.51 eV, respectively. Observation from PEC measurements indicates a p-, i- and n-type electrical conductivity for as-deposited CdTe layers grown in the cathodic voltage range (1,247–1,258) mV. The SEM images indicate noticeable change in CdTe grain size from ~85 to ~430 nm after CdCl2 treatment with uniform surface coverage of the glass/FTO substrate. The TEM images show the columnar growth structure for as-deposited and CdCl2 treated CdTe layers. The TEM images also indicate an increase in grain’s diameter from ~50 to ~200 nm after CdCl2 treatment

Analysis of electrodeposited CdTe thin films grown using cadmium chloride precursor for applications in solar cells

Deposition of cadmium telluride (CdTe) from cadmium chloride (CdCl2) and tellurium oxide has been achieved by electroplating technique using two-electrode configuration. Cyclic voltammetry shows that near-stoichiometric CdTe is achievable between 1330 and 1400 mV deposition voltage range. The layers grown were characterised using X-ray diffraction (XRD), UV–Visible spectrophotometry, scanning electron microscopy (SEM), energy-dispersive X-ray analysis (EDX), photoelectrochemical (PEC) cell and DC conductivity measurements. The XRD shows that the electrodeposited CdTe layer is polycrystalline in nature. The UV–Visible spectrophotometry shows that the bandgap of both as-deposited and heat-treated CdTe films are in the range of (1.44–1.46) eV. The SEM shows grain growth after CdCl2 treatment, while, the EDX shows the effect of growth voltage on the atomic composition of CdTe layers. The PEC results show that both p- and n-type CdTe can be electrodeposited and the DC conductivity reveals that the high resistivity is at the inversion growth voltage (Vi) for the as-deposited and CdCl2 treated layers

Effects of deposition time and post-deposition annealing on the physical and chemical properties of electrodeposited CdS thin films for solar cell application

CdS thin films were cathodically electrodeposited by means of a two-electrode deposition system for different durations. The films were characterised for their structural, optical, morphological and compositional properties using x-ray diffraction (XRD), spectrophotometry, scanning electron microscopy (SEM) and energy dispersive x-ray (EDX) respectively. The results obtained show that the physical and chemical properties of these films are significantly influenced by the deposition time and post-deposition annealing. This influence manifests more in the as-deposited materials than in the annealed ones. XRD results show that the crystallite sizes of the different films are in the range (9.4 – 65.8) nm and (16.4 – 66.0) nm in the as-deposited and annealed forms respectively. Optical measurements show that the absorption coefficients are in the range (2.7×104 – 6.7×104) cm-1 and (4.3×104 – 7.2×104) cm-1 respectively for as-deposited and annealed films. The refractive index is in the range (2.40 – 2.60) for as-deposited films and come to the value of 2.37 after annealing. The extinction coefficient varies in the range (0.1 – 0.3) in asdeposited films and becomes 0.1 in annealed films. The estimated energy bandgap of the films is in the range (2.48 – 2.50) eV for as-deposited films and becomes 2.42 eV for all annealed films. EDX results show that all the films are S-rich in chemical composition with fairly uniform Cd/S ratio after annealing. The results show that annealing improves the qualities of the films and deposition time can be used to control the film thickness. Keywords: Electrodeposition; two-electrode system; CdS; annealing; deposition time; thin-film

Electrodeposition and characterisation of CdS thin films using thiourea precursor for application in solar cells

CdS thin films have been successfully electrodeposited on glass/FTO substrates using acidic and aqueous solution of CdCl2.xH2O and thiourea (SC(NH2)2). The electrodeposition of CdS thin films were carried out potentiostatically using a 2-electrode system. The prepared films were characterised using X-ray diffraction (XRD), Raman spectroscopy, Scanning electron microscopy (SEM), Atomic force microscopy (AFM), Photoelectrochemical (PEC) cell measurements, Electrical resistivity measurements and UV-Vis spectrophotometry to study their structural, compositional, morphological, electrical and optical properties, respectively. The structural studies show that the as-deposited and annealed CdS layers are polycrystalline with hexagonal crystal structure and preferentially oriented along (200) planes. The optical studies indicate that the ED-CdS layers have direct bandgaps in the range (2.53-2.58) eV for the as-deposited and (2.42-2.48) eV after annealing at 400oC for 20 minutes in air. The morphological studies show the good coverage of the FTO surface by the CdS grains. The average grain sizes for the as-deposited and annealed layers were in the range (60-225) nm. These grains or clusters are made out of smaller nano crystallites with the sizes in the range ~(11-33) nm. The electrical resistivity shows reduction as thickness increases. The resistivity values for the as-deposited and annealed layers were in the range (0.82-4.92)×105 Ωcm. The optimum growth voltage for the CdS thin films was found to be at the cathodic potential of 797 mV with respect to the graphite anode. No visible precipitations of elemental S or CdS particles were observed in the deposition electrolyte showing a stable bath using thiourea during the growth

Scientific complications and controversies noted in the field of CdS/CdTe thin film solar cells and the way forward for further development

Cadmium telluride-based solar cell is the most successfully commercialised thin film solar cell today. The laboratory-scale small devices have achieved ~ 22%, and commercial solar panels have reached ~ 18% conversion efficiencies. However, there are various technical complications and some notable scientific contradictions that appear in the scientific literature published since the early 1970s. This review paper discusses some of these major complications and controversies in order to focus future research on issues of material growth and characterisation, post-growth processing, device architectures and interpretation of the results. Although CdTe can be grown using more than 14 different growth techniques, successful commercialisation has been taken place using close-space sublimation and electrodeposition techniques only. The experimental results presented in this review are mainly based on electrodeposition. Historical trends of research and commercial successes have also been discussed compared to the timeline of novel breakthroughs in this field. Deeper understanding of these issues may lead to further increase in conversion efficiencies of this solar cell. Some novel ideas for further development of thin film solar cells are also discussed towards the end of this paper

Effect of stirring rate of electrolyte on properties of electrodeposited CdS layers

CdS is the most matching window material available for the CdTe absorber layer of CdS/CdTe solar cells and electrodeposition is a promising technique adaptable for fabrication of thin films of CdS owing to its simplicity, low cost, scalability and manufacturability. The quality of electrodeposited thin film semiconductor layers depends significantly on the electrodeposition potential, concentrations of precursor salts, pH, temperature and the rate of stirring of the electrolyte. In this study, the attention was focused on the effect of “stirring rate of electrolyte” since it has not been studied in detail in the past, despite of its strong relation to the rate of mass transport towards the working electrode where the thin film semiconductors are electrodeposited. This study was carried out via electrodepositing of CdS thin layers on fluorine doped tin oxide conducting glass working electrodes at different rates of stirring of the electrolyte while keeping the rest of the electrodeposition parameters unchanged at a previously identified set of values. The morphological, electrical and optical properties of the CdS layers grown at different stirring rates were used to determine the effect of stirring rate on the quality of CdS layers. The study revealed that, a stirring rate in the range of 60–125 rpm which produced orderly flows in the electrolyte around the working electrode (1 × 3 cm2) placed at the center of a 100 ml electrolytic bath with a distance of 2 cm apart between the graphite counter electrode and the conducting glass electrode could produce good quality CdS layers when electrodeposition was carried out at a cathodic deposition potential of 660 mV with respect to the saturated calomel electrode. The concentrations of CdCl2 and Na2S2O3 in the bath used were 0.10 and 0.01 M respectively. The temperature and pH of it were 60 °C and 1.80 respectively