31 research outputs found

    Ferromagnetic (Ga,Mn)As nanowires grown by Mn-assisted molecular beam epitaxy

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    (Ga,Mn)As nanowires were grown by molecular beam epitaxy using Mn as a growth catalyst on GaAs(001) substrates at 485 °C, i.e., at intermediate temperatures higher than ones used for the growth of (Ga,Mn)As thin films, but lower than the ordinary temperatures of Au-assisted growth of GaAs nanowires. (Ga,Mn)As nanowires obtained with typical lengths between 0.8 and 4 μm and diameters 50–90 nm do not have defects, such as dislocations or precipitates, except for the stacking faults lying parallel to the growth direction. The investigation of magnetic and optical properties has been carried out not only for as-grown samples with nanowires but also for peeled off nanowires from the host substrate. The results obtained demonstrate that (Ga,Mn)As nanowires exhibit ferromagnetic ordering around 70 K.Peer reviewe

    Nanowire quantum dots tuned to atomic resonances

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    Quantum dots tuned to atomic resonances represent an emerging field of hybrid quantum systems where the advantages of quantum dots and natural atoms can be combined. Embedding quantum dots in nanowires boosts these systems with a set of powerful possibilities, such as precise positioning of the emitters, excellent photon extraction efficiency and direct electrical contacting of quantum dots. Notably, nanowire structures can be grown on silicon substrates, allowing for a straightforward integration with silicon-based photonic devices. In this work we show controlled growth of nanowire-quantum-dot structures on silicon, frequency tuned to atomic transitions. We grow GaAs quantum dots in AlGaAs nanowires with a nearly pure crystal structure and excellent optical properties. We precisely control the dimensions of quantum dots and their position inside nanowires, and demonstrate that the emission wavelength can be engineered over the range of at least 30 nm30\,nm around 765 nm765\,nm. By applying an external magnetic field we are able to fine tune the emission frequency of our nanowire quantum dots to the D2D_{2} transition of 87^{87}Rb. We use the Rb transitions to precisely measure the actual spectral linewidth of the photons emitted from a nanowire quantum dot to be 9.4±0.7μeV9.4 \pm 0.7 \mu eV, under non-resonant excitation. Our work brings highly-desirable functionalities to quantum technologies, enabling, for instance, a realization of a quantum network, based on an arbitrary number of nanowire single-photon sources, all operating at the same frequency of an atomic transition.Comment: main text (20 pages, 3 figures) plus supplementary information, Nano Letters (2018

    Resonant excitation of nanowire quantum dots

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