Enhanced Photoresponse of SnSe-Nanocrystals-Decorated WS₂ Monolayer Phototransistor

Single-layer WS₂ has shown excellent photoresponse properties, but its promising applications in high-sensitivity photodetection suffer from the atomic-thickness-limited adsorption and band-gap-limited spectral selectivity. Here we have carried out investigations on WS₂ monolayer based phototransistors with and without decoration of SnSe nanocrystals (NCs) for comparison. Compared to the solely WS₂ monolayer, SnSe NCs decoration leads to not only huge enhancement of photoresponse in visible spectrum but also extension to near-infrared. Under excitation of visible light in a vacuum, the responsivity at zero gate bias can be enhanced by more than 45 times to ∼99 mA/W, and the response time is retained in millisecond level. Particularly, with extension of photoresponse to near-infrared (1064 nm), a responsivity of 6.6 mA/W can be still achieved. The excellent photoresponse from visible to near-infrared is considered to benefit from synergism of p-type SnSe NCs and n-type WS₂ monolayer, or in other words, the formed p-n heterojunctions between p-type SnSe NCs and n-type WS₂ monolayer

Flexible Black-Phosphorus Nanoflake/Carbon Nanotube Composite Paper for High-Performance All-Solid-State Supercapacitors

We proposed a simple route for fabrication of the flexible BP nanoflake/carbon nanotube (CNT) composite paper as flexible electrodes in all-solid-state supercapacitors. The highly conductive CNTs not only play a role as active materials but also increase conductivity of the hybrid electrode, enhance electrolyte shuttling and prevent the restacking between BP nanoflakes. The fabricated flexible all-solid-state supercapacitor (ASSP) device at the mass proportion of BP/CNTs 1:4 was found to deliver the highest volumetric capacitance of up to 41.1 F/cm³ at 0.005 V/s, superior to the ASSP based on the bare graphene or BP. The BP/CNTs (1:4) device delivers a rapid charging/discharging up to 500 V/s, which exhibits the characteristic of a high power density of 821.62 W/cm³, while having outstanding mechanical flexibility and high cycling stability over 10 000 cycles (91.5% capacitance retained). Moreover the BP/CNTs (1:4) ASSP device still retains large volumetric capacitance (35.7 F/cm³ at the scan rate of 0.005 V/s) even after 11 months. In addition, the ASSP of BP/CNTs (1:4) exhibits high energy density of 5.71 mWh/cm³ and high power density of 821.62 W/cm³. As indicated in our work, the strategy of assembling stacked-layer composites films will open up novel possibility for realizing BP and CNTs in new-concept thin-film energy storage devices

Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability

Black phosphorus (BP) has drawn great attention owing to its tunable band gap depending on thickness, high mobility, and large <i>I</i>_on/<i>I</i>_off ratio, which makes BP attractive for using in future two-dimensional electronic and optoelectronic devices. However, its instability under ambient conditions poses challenge to the research and limits its practical applications. In this work, we present a feasible approach to suppress the degradation of BP by sulfur (S) doping. The fabricated S-doped BP few-layer field-effect transistors (FETs) show more stable transistor performance under ambient conditions. After exposing to air for 21 days, the charge-carrier mobility of a representative S-doped BP FETs device decreases from 607 to 470 cm² V^–1 s^–1 (remained as high as 77.4%) under ambient conditions and a large <i>I</i>_on/<i>I</i>_off ratio of ∼10³ is still retained. The atomic force microscopy analysis, including surface morphology, thickness, and roughness, also indicates the lower degradation rate of S-doped BP compared to BP. First-principles calculations show that the dopant S atom energetically prefers to chemisorb on the BP surface in a dangling form and the enhanced stability of S-doped BP can be ascribed to the downshift of the conduction band minimum of BP below the redox potential of O₂/O₂^–. Our work suggests that S doping is an effective way to enhance the stability of black phosphorus

MOESM6 of Comparative liver transcriptome analysis in ducklings infected with duck hepatitis A virus 3 (DHAV-3) at 12 and 48Â hours post-infection through RNA-seq

Additional file 6. Genes expressed only in the livers of ducklings at 48 hpi. Compared with the control group, genes expressed only in the livers of ducklings at 48 hpi

MOESM10 of Comparative liver transcriptome analysis in ducklings infected with duck hepatitis A virus 3 (DHAV-3) at 12 and 48Â hours post-infection through RNA-seq

Additional file 10. GO annotation information of genes in the livers of ducklings at 48 hpi

MOESM4 of Comparative liver transcriptome analysis in ducklings infected with duck hepatitis A virus 3 (DHAV-3) at 12 and 48Â hours post-infection through RNA-seq

Additional file 4. Differentially expressed genes in the uninfected and 48 hpi duckling livers. The list of all differentially expressed genes in the livers of ducklings in the control group and 48 hpi group

MOESM8 of Comparative liver transcriptome analysis in ducklings infected with duck hepatitis A virus 3 (DHAV-3) at 12 and 48Â hours post-infection through RNA-seq

Additional file 8. Description of all genes in the livers of ducklings at 48 hpi. Structure, expression level, difference information, and annotation information for all genes at 48 hpi are described

MOESM3 of Comparative liver transcriptome analysis in ducklings infected with duck hepatitis A virus 3 (DHAV-3) at 12 and 48Â hours post-infection through RNA-seq

Additional file 3. Differentially expressed genes in the uninfected and 12 hpi duckling livers. The list of all differentially expressed genes in the livers of ducklings in the control group and 12 hpi group

MOESM9 of Comparative liver transcriptome analysis in ducklings infected with duck hepatitis A virus 3 (DHAV-3) at 12 and 48Â hours post-infection through RNA-seq

Additional file 9. GO annotation information of genes in the livers of ducklings at 12 hpi