An analytical model for scanning electron microscope Type I magnetic contrast with energy filtering

10.1063/1.1145243Review of Scientific Instruments652374-38

An analytical model for Type I magnetic contrast enhancement with sample tilting

Journal of Applied Physics8294143-4147JAPI

Germanium nanostructures for electronic memory application

10.1109/SMELEC.2008.4770262IEEE International Conference on Semiconductor Electronics, Proceedings, ICSEA7-A1

A novel correction scheme for quantitative voltage contrast measurements using low extraction fields in the scanning electron microscope

10.1088/0957-0233/6/5/009Measurement Science and Technology65488-49

A neural-network-based local-field-effect correction scheme for quantitative voltage contrast measurements in the scanning electron microscope

10.1088/0957-0233/7/6/004Measurement Science and Technology76882-887MSTC

Synthesis and electronic application of germanium nanocrystals in silicon oxide matrix

Materials Research Society Symposium Proceedings95995-100MRSP

Conductance-voltage measurements on germanium nanocrystal memory structures and effect of gate electric field coupling

10.1063/1.2186738Applied Physics Letters8811-APPL

Random telegraphic signals and low-frequency noise in rapid-thermal-annealed silicon-silicon oxide structures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers4011-6JAPN

Electrical and structural properties of rapid thermal annealed RF sputtered silicon oxide films

Thin Solid Films343-3441-2108-110THSF