Sustained Robust Exciton Emission in Suspended Monolayer WSe_2 within the Low Carrier Density Regime for Quantum Emitter Applications

The development of semiconductor optoelectronic devices is moving toward low power consumption and miniaturization, especially for high-efficiency quantum emitters. However, most of these quantum sources work at low carrier density region, where the Shockley-Read-Hall recombination may dominant and seriously reduce the emission efficiency. In order to diminish the affection of carrier trapping and sustain a strong photoluminescence emission under low power pumping condition, we investigated on the influence of Suspending to monolayered tungsten diselenide, novel two-dimensional quantum material. Not only the PL intensity, but also the fundamental photoluminescence quantum yield has exhibited a huge, order-scale enhancement through suspending, even surprisingly, we found the PLQY improvement revealed far significantly under small pumping power and came out an exponential increase tendency toward even lower carrier density region. With its strong excitonic effect, suspended WSe_2 offers a solution to reduce carrier trapping and participate in non-radiative processes. Moreover, in the low-power range where SRH recombination dominates, suspended WSe_2 exhibited remarkably higher percentage of excitonic radiation compared to contacted WSe_2. Herein, we quantitatively demonstrate the significance of suspended WSe_2 monolayer at low carrier density region, highlighting its potential for developing compact, low-power quantum emitters in the future

Circular Dichroism Control of Tungsten Diselenide (WSe₂) Atomic Layers with Plasmonic Metamolecules

Controlling circularly polarized (CP) states of light is critical to the development of functional devices for key and emerging applications such as display technology and quantum communication, and the compact circular polarization-tunable photon source is one critical element to realize the applications in the chip-scale integrated system. The atomic layers of transition metal dichalcogenides (TMDCs) exhibit intrinsic CP emissions and are potential chiroptical materials for ultrathin CP photon sources. In this work, we demonstrated CP photon sources of TMDCs with device thicknesses approximately 50 nm. CP photoluminescence from the atomic layers of tungsten diselenide (WSe₂) was precisely controlled with chiral metamolecules (MMs), and the optical chirality of WSe₂ was enhanced more than 4 times by integrating with the MMs. Both the enhanced and reversed circular dichroisms had been achieved. Through integrations of the novel gain material and plasmonic structure which are both low-dimensional, a compact device capable of efficiently manipulating emissions of CP photon was realized. These ultrathin devices are suitable for important applications such as the optical information technology and chip-scale biosensing

Plasmonic Carbon-Dot-Decorated Nanostructured Semiconductors for Efficient and Tunable Random Laser Action

Carbon dots have emerged as popular materials in various research fields, including biological and photovoltaic areas, while significant reports are lacking related to their applications in laser devices, which play a significant role in our daily life. In this work, we demonstrate the first controllable random laser assisted by the surface plasmon effect of carbon dots. Briefly, carbon dots derived from candle soot are randomly deposited on the surface of gallium nitride (GaN) nanorods to enhance the ultraviolet fluorescence of GaN and generate plasmonically enhanced random laser action with coherent feedback. Furthermore, potentially useful functionalities of tunable lasing threshold and controllable optical modes are achieved by adjusting the numbers of carbon dots, enabling applications in optical communication and identification technologies. In addition to providing an efficient alternative for plasmonically enhanced random laser devices with simple fabrication and low cost, our work also paves a useful route for the application of environmentally friendly carbon dots in optoelectronic devices