Topological Weyl and Node-Line Semimetals in Ferromagnetic Vanadium-Phosphorous-Oxide β\beta-V2_2OPO4_4 Compound

We propose that the topological semimetal features can co-exist with ferromagnetic ground state in vanadium-phosphorous-oxide $\beta$-V$_2$OPO$_4$ compound from first-principles calculations. In this magnetic system with inversion symmetry, the direction of magnetization is able to manipulate the symmetric protected band structures from a node-line type to a Weyl one in the presence of spin-orbital-coupling. The node-line semimetal phase is protected by the mirror symmetry with the reflection-invariant plane perpendicular to magnetic order. Within mirror symmetry breaking due to the magnetization along other directions, the gapless node-line loop will degenerate to only one pair of Weyl points protected by the rotational symmetry along the magnetic axis, which are largely separated in momentum space. Such Weyl semimetal phase provides a nice candidate with the minimum number of Weyl points in a condensed matter system. The results of surface band calculations confirm the non-trivial topology of this proposed compound. This findings provide a realistic candidate for the investigation of topological semimetals with time-reversal symmetry breaking, particularly towards the realization of quantum anomalous Hall effect in Weyl semimetals.Comment: 5 pages, 4 figure

A Two-Step Etching Method to Fabricate Nanopores in Silicon

A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching can be effectively carried out. An electrochemical system is employed to detect and record the ion diffusion current once the pre-etched cavities are etched into a through nanopore. Experimental results indicate that the proposed method can cost effectively fabricate nanopores in silicon.Comment: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/EDA-Publishing