Graphene formation on SiC substrates

Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2 etching the on-axis sub-strates was developed to produce surface steps with heights of 0.5 nm on the Si-face and 1.0 to 1.5 nm on the C-face for each polytype. A process was developed to form graphene on the substrates immediately after H2 etching and Raman spectroscopy of these samples confirmed the formation of graphene. The morphology of the graphene is described. For both faces, the underlying substrate morphology was significantly modified during graphene formation; sur-face steps were up to 15 nm high and the uniform step morphology was sometimes lost. Mo-bilities and sheet carrier concentrations derived from Hall Effect measurements on large area (16 mm square) and small area (2 and 10 um square) samples are presented and shown to compare favorably to recent reports.Comment: European Conference on Silicon Carbide and Related Materials 2008 (ECSCRM '08), 4 pages, 4 figure

Pilot and feasibility studies : extending the conceptual framework

Acknowledgements Not applicable. Funding No specific funding was received for this work.Peer reviewedPublisher PD

A multi-agency project of the Western Australian Salinity Action Plan supported by the Natural Heritage Trust

Land Monitor is a multi-agency project of the Western Australian Salinity Action Plan supported by the Natural Heritage Trust. It will provide land managers and administrators with baseline salinity and vegetation data for monitoring changes over time, and land height data from which contours accurate to two metre intervals can be produced. The Project will also provide estimates of areas at risk from secondary or future salinisation. Land Monitor will cover the 18 million hectares of agricultural area of south-west, Western Australia. Sequences of calibrated Landsat Thematic Mapper satellite images integrated with landform information derived from height data, ground truthing and other existing mapped data sets are used as the basis for monitoring changes in salinity and woody vegetation. Heights are derived on a 10m grid from stereo aerial photography flown at 1:40,000 scale, using soft-copy automatic terrain extraction (image correlation) techniques. Proposed Land Monitor products include salinity maps, predicted salinity maps, enhanced imagery, vegetation status maps and spectral / temporal statistics. These products will be available in a range of formats and scales, from paddock, farm to catchment and shire scales to suit customer needs

Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide

Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force microscopies and it was found that growth under argon led to improved morphologies on the C-face films but the Si-face films were not significantly affected. Free carrier transport studies were conducted through Hall effect measurements, and carrier mobilities were found to increase and sheet carrier densities were found to decrease for those films grown under argon as compared to high vacuum conditions. The improved mobilities and concurrent decreases in sheet carrier densities suggest a decrease in scattering in the films grown under argon.Comment: 215th Meeting of the Electrochemical Society (ECS 215), 14 pages, 6 figure

Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide

Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended on the growth face. About 40% of the samples exhibited holes as the dominant carrier, independent of face. Generally, mobilities increased with decreasing carrier density, independent of carrier type and substrate polytype. The contributions of scattering mechanisms to the conductivities of the films are discussed. The results suggest that for near-intrinsic carrier densities at 300 K epitaxial graphene mobilities will be ~150,000 cm2V-1s-1 on the (000-1) face and ~5,800 cm2V-1s-1 on the (0001) face.Comment: Accepted for publication in Applied Physics Letters, 10 pages, 2 figure

The Land Monitor Project

The Land Monitor Project is providing information over the southwest agricultural region of WA. It is assembling and processing sequences of Landsat TM data, a new highresolution digital elevation model (DEM) and other spatial data to provide monitoring information on the area of salt-affected land, and on changes in the area and status of perennial vegetation over the period 1988-2000. Land Monitor is a multi-agency project of the Western Australian Salinity Action Plan supported by the Natural Heritage Trust. The Project will also providing estimates of areas at risk from secondary or future salinisation, based on the historical salinity maps and a set of landform variables derived from the high resolution DEM. Sequences of calibrated Landsat Thematic Mapper satellite images integrated with landform information derived from height data, ground truthing and other existing mapped data are used as the basis for monitoring changes in salinity and woody vegetation. Procedures for accurate registration and calibration were developed by CSIRO Mathematical and Information Sciences (CMIS), as were the data integration procedures for salinity mapping and prediction. For the DEM, heights are derived on a 10m grid from stereo aerial photography flown at 1:40,000 scale, using soft-copy automatic terrain extraction (image correlation) techniques. Land Monitor products include: high resolution DEMs; calibrated sequences of Landsat imgery; present and historical salinity maps; predicted salinity maps; maps of change in vegetation status and spectral/temporal statistics. These products are available in a range of formats and scales, from paddock to catchment and shire scales to suit customer needs

Morphology Characterization of Argon-Mediated Epitaxial Graphene on C-face SiC

Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of the islands and continuous films indicated that island nucleation and coalescence is the growth mechanism for C-face graphene.Comment: 12 pages, 4 figure

Acute Management and Outcomes of Patients with Diabetes Mellitus Presenting to Canadian Emergency Departments with Hypoglycemia

Objectifs: Cette vérification rétrospective des dossiers a permis d\u27examiner les données démographiques, les examens, la prise en charge et les résultats des patients adultes souffrant de diabète sucré qui se sont présentés aux services des urgences (SU) au Canada. Méthodes: Tous les sites ont mené une recherche dans leurs dossiers médicaux électroniques à l\u27aide des codes de la Classification internationale des maladies, dixième révision, pour relever les visites aux SU entre 2008 et 2010 qui étaient liées à l\u27hypoglycémie. Les caractéristiques des patients, les données démographiques, la prise en charge aux SU, les ressources des SU et les résultats sont rapportés. Résultats: Un total de 1039 patients de plus de 17 ans ont été inclus dans l\u27étude; 347 (33,4 %) ont été classifiés comme étant des cas de diabète de type 1 et 692 (66,6 %) ont été classifiés comme étant des cas de diabète de type 2. Les patients souffrant du diabète de type 2 étaient beaucoup plus âgés (73 ans vs 49 ans; p\u3c0,0001) et avaient plus d\u27affections chroniques inscrites à leur dossier (tous p\u3c0,001). La plupart des sujets arrivaient par ambulance, et 39 % des cas montraient des scores de triage qui révélaient des tableaux cliniques graves. Les traitements contre l\u27hypoglycémie étaient fréquents (75,7 %) durant le transport préhospitalier; 38,5 % recevaient du glucose et 40,1 % recevaient du glucagon par voie intraveineuse. Les traitements administrés dans les SU contre l\u27hypoglycémie comprenaient le glucose par voie orale (76,8 %), le glucose par voie intraveineuse (29,6 %) et en perfusion continue (27,7 %). Les examens diagnostiques (81,9 %) comprenaient fréquemment les électrocardiogrammes (51,9 %), la radiographie thoracique (37,5 %) et la tomodensitométrie crânienne (14,5 %). La plupart des patients (73,5 %) recevaient leur congé. Cependant, plus de sujets souffrant du diabète de type 2 nécessitaient une admission (30,3 vs 8,8 %). Les instructions de congé étaient étayées chez seulement 55,5 % des patients, et l\u27orientation vers des services de diabète se rencontrait chez moins de 20 % des cas. Une variation considérable dans la prise en charge de l\u27hypoglycémie existait entre les SU. Conclusions: Les patients souffrant de diabète qui se présentaient à un SU en raison d\u27une hypoglycémie consomment considérablement de ressources en soins de santé, puis une variation est observée dans la pratique. Les SU devraient élaborer des protocoles de prise en charge de l\u27hypoglycémie en portant une attention à la planification du congé pour réduire la récurrence

Epitaxial Graphene Growth on SiC Wafers

An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and electrical properties of EG are described. Raman spectra of EG on Si-face samples were dominated by monolayer thickness. This approach was used to grow EG on 50 mm SiC wafers that were subsequently fabricated into field effect transistors with fmax of 14 GHz.Comment: 215th Meeting of the Electrochemical Society, 8 pages, 8 figure