Analysis and Measurement Technique for 1- dB Compression Point of Single Balanced RF Mixer

The present paper discusses the basic working and operation of RF Mixers being used broadly for communication purposes. In the present paper we have discussed various important parameters of Mixer and elaborately described the instrument setup and measurement techniques for measuring the most vital parameter for analyzing performance of mixer i.e., 1-dB Compression Point (P1dB). 1- dB compression point is very significant parameter as it indicates the power level that causes the gain to drop by 1 dB from its small signal value. In this paper we have described test set up for measuring this important parameter with various measuring instruments and has obtained good agreement between the predictions and experimental data. Index Terms- Single diode mixers, 1 dB Compression Point (P1dB), Down Converter, VM-3 Receiver, Power meter, Attenuato

Comparative Analysis Among Steganographic LSB Variants

Combining the best features of steganography and cryptography is the trending concept which is being followed for the purpose of information security. Steganography provides the provision for hiding secret data in some cover file in order to make it undiscovered by the perpetrators. On the complementary, cryptography secures that secret data by manipulating its original form and converting it into an unintelligent form. Hence, making the data more powerful and secure against the prevailing security attacks and breaches. This paper represents the implementation of this combination on the two LSB variants namely sequential LSB and randomized LSB. A comparison among the two approaches is carried out by adding a secret text into a video cover file. The concept of chaotic sequence has been used as the security approach that converts the secret data into random bits pattern. The proposed work uses the traditional LSB approach as basic steganographic model. The inference on the basis of parameters concludes that the randomized LSB shows better results than the sequential LSB scheme

Study of the Phase Transition Phenomenon in SrTe under Pressure

The phase transition pressure and volume collapse of SrTe have been studied. A three body interaction potential (TBIP) model is developed to study the high pressure phase transition of present compound having NaCl (B1) structure at room temperature. This model includes the long range Columbic, three body interaction forces, short range overlap forces operative up to next nearest neighbors and zero point energy effects.  It is found that the inclusion of zero point energy effects has improved the results. Keywords: Phase transition, volume collapse, three body interaction and zero point energy

Rapidity correlations in 800 GeV proton-nucleus interactions

Rapidity correlations in 800 GeV proton interactions with emulsion nuclei are investigated for different targets and multiplicity regions. To study the energy dependence, the results have been compared with proton interactions at 200 GeV and 400 GeV. A common feature of all the interactions is the existence of strong, short-range correlations. However, no dependence of cluster parameters on primary energy or target mass is found. A marginal increase of correlation strength with multiplicity is observed

Annealing behaviour of boron implanted defects in Si detector: impact on breakdown performance

Electrical properties of a device depend primarily on the active dopant concentration; understanding of the activation (annealing) process is crucial for the prediction of device behaviour. The present paper reports results from a computer based simulation approach to improve the breakdown performance of the device by studying the annealing behaviour of boron implanted in silicon. In order to have deep insight of the effect of defect complexes on the device performance, extended defect model has been incorporated in the simulation program. Optimization of annealing time, annealing temperature and dose has been performed, for the first time, incorporating a complete set of process induced defects like {113} defects, interface traps, dislocation loops and the optimization has been validated in terms of the breakdown performance of the device

Charged-particle multiplicity distributions in different rapidity windows in 800 GeV proton-nucleus interactions

Multiplicity distributions of charged particles produced in interactions of 800 GeV protons with emulsion nuclei in various rapidity windows are presented. The data is also analyzed separately for the forward and the backward hemispheres, for rapidity windows of different widths. It is found that the Negative Binomial Distribution (NBD) describes well the multiplicity distribution of secondary particles in various rapidity windows and also in both the hemispheres. We have compared the NBD parameters, in both the hemispheres, at 200 GeV and 360 GeV, with those at 800 GeV. The behaviour of NBD parameters in rapidity windows of different widths and for different targets has also been studied

Impact of radiation on breakdown performance of Si strip detectors

The very intense radiation environment of high luminosity future colliding beam experiments, like Large Hadron Collider (LHC etc.) makes radiation hardness the most urgent demand for Si detectors. The radiation hardness of Si strip detectors especially developed for LHC experiment was investigated with respect to ionizing and nonionizing radiation using computer simulations. (10 refs)

Techniques of Improving the Breakdown Voltage of Si Microstrip Preshower Detector

In this paper, a computer based analysis is performed to study layout solutions aimed at increasing the breakdown voltage in Si microstrip detectors. For optimum performance, it is crucial to achieve the maximum breakdown voltage for Si detectors that operate at very high bias due to extremely hostile radiation environment of LHC. The breakdown performance of Si microstrip detectors can be improved by implementing floating field-limiting rings (FLR) and metal-overhang structures around the active detector area. In the present work, we optimize various physical and geometrical parameters for improving the breakdown voltage. In order to optimize the guard ring spacing for multiple ring structure, we have studied the electrical properties of Si detector with seven guard rings in six different layouts. It is shown that an optimum value exists for oxide thickness and junction depth to realize maximum breakdown voltage in structures with overhanging metal strips. The simulated results are compared with the experimental data and good agreement between the two is observed

A new approach to the optimal design of multiple field-limiting ring structures

In this paper, a computer-based analysis is performed to study layout solutions aimed at increasing the breakdown voltage in Si-microstrip detectors. For optimum performance it is crucial to achieve maximum breakdown voltage for Si detectors operating at very high bias due to the extremely hostile radiation environment of next generation experiments such as LHC. The performance of Si-microstrip detectors can be improved by implementing floating field-limiting rings around the active detector area. A simulation study has been carried out to evaluate the distribution of breakdown voltage as a function of guard-ring spacing (GS). The purpose of this work is to find a criterion to optimize GS for multiple ring structures incorporating various physical and geometrical parameters as an aid to design optimization. Using this criterion the optimum spacing of guard rings for multiple ring structures was obtained. The proposed criterion is very robust and is insensitive to the number of guard rings, junction depth and radiation damage. The simulation results for the seven-ring design agree well with experimental measurements. (21 refs)

Impact of harsh radiation on metal-overhang equipped sensors in the LHC environment

The utility of silicon microstrip detectors in future high luminosity colliders, like LHC requires some serious issues concerning radiation hardness to be carefully considered. The performance of metal- overhang (MO) equipped Si micro-strip sensors has been studied after irradiation for the preshower detector to be used in CMS experiment at LHC, CERN. The parameterization of these effects has been performed using Hamburg model to simulate the operation scenario of MO equipped sensors over 10 years of LHC operation. The utility of overhanging metal extension as junction termination technique after type-inversion has been explored for the first time in this work Several interesting results like a shift in the optimal oxide thickness in MO equipped structures after irradiation have been reported. It has been found that the breakdown performance of the device actually improves after irradiation due to the beneficial effect of type-inversion. Dielectric and semi-insulator passivated MO equipped structures have been compared after irradiation in this study. Also, the impact of various crucial geometrical parameters like device depth (W/sub N/), width of back N+ layer used for ohmic contact (W/sub N//sup +/) and width of overhang extension (W/sub MO/) on the metal-overhang equipped structure after type-inversion has been presented in detail. (10 refs)