Low temperature MBE grown GaAs for terahertz radiation applications

Attempts to optimize recombination characteristics of LTG GaAs layers for their use in terahertz (THz) radiation devices were performed. Femtosecond laser based transient reflectivity and optical pump – THz or mid-IR probe techniques were employed for the electron and, respectively, hole trapping time determination. THz range devices manufactured from LTG GaAs layers grown and annealed at different temperatures were investigated

Low-Temperature MBE Grown GaAs for Pulsed THz Radiation Applications

Attempts to optimize recombination characteristics of low-temperature MBE grown GaAs layers for their use in terahertz radiation devices are described and the characteristics of this material are compared with its alternative - As-ion implanted GaAs crystals

Puslaidininkės medžiagos ultrasparčiajai optoelektronikai

The paper presents a review of experimental investigations of various semiconductor materials used for the development of ultrafast optoelectronic devices activated by femtosecond laser pulses that have been performed at the Optoelectronics Laboratory of the Semiconductor Physics Institute during the period from 1997 to 2008. Technology and physical characteristics of low-temperature-grown GaAs and GaBiAs layers as well as the effect of terahertz radiation from the femtosecond laser excited semiconductor surfaces are described and analysed.Lietuviška santrauka. Pateikta įvairių puslaidininkinių medžiagų, naudojamų kuriant ultrasparčius optoelektronikos prietaisus, žadinamus femtosekundiniais lazeriais, ekspwerimentinių tyrimų apžvalga. Tyrimai atlikti Puslaidininkių fizikos instituto Optoelektronikos laboratorijoje1997-2008 metais. Aprašyta žemoje temperatūroje augintų GaAs ir GaBiAssluoksnių technologija ir fizikinės savybės. Išsamiai aptyartas ir išanalizuotas THz spinduliuotės generavimas iš femtosekundiniu lazeriu sužadintų puslaidininkių paviršiaus

Valence band anticrossing in GaBixAs1-x

The optical properties of GaBixAs1-x (0.04< x< 0.08) grown by molecular beam epitaxy have been studied by photomodulated reflectance spectroscopy. The alloys exhibit a strong reduction in the bandgap as well as an increase in the spin-orbit splitting energy with increasing Bi concentration. These observations are explained by a valence band anticrossing model, which shows that a restructuring of the valence band occurs as the result of an anticrossing interaction between the extended states of the GaAs valence band and the resonant T2 states of the Bi atoms

Low-Temperature MBE Grown GaAs for Pulsed THz Radiation Applications

Attempts to optimize recombination characteristics of low-temperature MBE grown GaAs layers for their use in terahertz radiation devices are described and the characteristics of this material are compared with its alternative - As-ion implanted GaAs crystals

Be-doped low-temperature-grown GaAs material for optoelectronic switches

International audienc

Nintedanib in children and adolescents with fibrosing interstitial lung diseases

BACKGROUND: Childhood interstitial lung disease (ILD) comprises a spectrum of rare ILDs affecting infants, children and adolescents. Nintedanib is a licensed treatment for pulmonary fibrosis in adults. The primary objectives of the InPedILD trial were to determine the dose-exposure and safety of nintedanib in children and adolescents with fibrosing ILD. METHODS: Patients aged 6–17 years with fibrosing ILD on high-resolution computed tomography and clinically significant disease were randomised 2:1 to receive nintedanib or placebo for 24 weeks and then open-label nintedanib. Dosing was based on weight-dependent allometric scaling. Co-primary end-points were the area under the plasma concentration–time curve at steady state (AUC(τ,ss)) at weeks 2 and 26 and the proportion of patients with treatment-emergent adverse events at week 24. RESULTS: 26 patients received nintedanib and 13 patients received placebo. The geometric mean (geometric coefficient of variation) AUC(τ,ss) for nintedanib was 175 µg·h·L(−1) (85.1%) in patients aged 6–11 years and 160 µg·h·L(−1) (82.7%) in patients aged 12–17 years. In the double-blind period, adverse events were reported in 84.6% of patients in each treatment group. Two patients discontinued nintedanib due to adverse events. Diarrhoea was reported in 38.5% and 15.4% of the nintedanib and placebo groups, respectively. Adjusted mean±se changes in percentage predicted forced vital capacity at week 24 were 0.3±1.3% in the nintedanib group and −0.9±1.8% in the placebo group. CONCLUSIONS: In children and adolescents with fibrosing ILD, a weight-based dosing regimen resulted in exposure to nintedanib similar to adults and an acceptable safety profile. These data provide a scientific basis for the use of nintedanib in this patient population