Magnetoresistance of atomic-sized contacts: an ab-initio study

The magnetoresistance (MR) effect in metallic atomic-sized contacts is studied theoretically by means of first-principle electronic structure calculations. We consider three-atom chains formed from Co, Cu, Si, and Al atoms suspended between semi-infinite Co leads. We employ the screened Korringa-Kohn-Rostoker Green's function method for the electronic structure calculation and evaluate the conductance in the ballistic limit using the Landauer approach. The conductance through the constrictions reflects the spin-splitting of the Co bands and causes high MR ratios, up to 50%. The influence of the structural changes on the conductance is studied by considering different geometrical arrangements of atoms forming the chains. Our results show that the conductance through s-like states is robust against geometrical changes, whereas the transmission is strongly influenced by the atomic arrangement if p or d states contribute to the current.Comment: Revised version, presentation of results is improved, figure 2 is splitted to two figure

Thermal and mechanical properties of advanced impregnation materials for HTS cables and coils

In the growing field of high-temperature superconducting (HTS) applications, finding an appropriate impregnation material for cables and coils remains a challenging task. In HTS cables and coils, tapes have to be able to withstand mechanical loads during operation. Impregnation is playing a role as mechanical stabilization. However, material properties usually change significantly when going to low temperatures which can decrease performance of superconducting devices. For example, a large mismatch in thermal expansion between a conductor and impregnation material at low temperatures can lead to delamination and to degradation of the critical current. Impregnation materials can insulate tapes thermally which can lead to damage of the superconducting device in case of quench. Thus, thermal conductivity is an important property which is responsible for the temperature distribution in a superconducting cable or in a coil. Due to Lorentz forces acting on structural materials in a superconducting device, the mechanical properties of these materials should be investigated at operating temperatures of this device. Therefore, it is important to identify an advanced impregnation material meeting all specific requirements. In this paper, thermal and mechanical properties of impregnation material candidates with added fillers are presented in a temperature range from 300 K to 4 K

Thermal and mechanical properties of selected 3D printed thermoplastics in the cryogenic temperature regime

Insulating materials for use in cryogenic boundary conditions are still limited to a proved selection as Polyamid, Glasfiber reinforced resins, PEEK, Vespel etc. These materials are usually formed to parts by mechanical machining or sometimes by cast methods. Shaping complex geometries in one piece is limited. Innovative 3D printing is now an upcoming revolutionary technology to construct functional parts from a couple of thermoplastic materials as ABS, Nylon and others which possess quite good mechanical stability and allow realizing very complex shapes with very subtle details. Even a wide range of material mixtures is an option and thermal treatments can be used to finish the material structure for higher performance. The use of such materials in cryogenic environment is very attractive but so far poor experience exists. In this paper, first investigations of the thermal conductivity, expansion and mechanical strength are presented for a few selected commercial 3D material samples to evaluate their application prospects in the cryogenic temperature regime

Does Giant Magnetoresistance Survive in Presence of Superconducting Contact?

The giant magnetoresistance (GMR) of ferromagnetic bilayers with a superconducting contact (F1/F2/S) is calculated in ballistic and diffusive regimes. As in spin-valve, it is assumed that the magnetization in the two ferromagnetic layers F1 and F2 can be changed from parallel to antiparallel. It is shown that the GMR defined as the change of conductance between the two magnetic configurations is an oscillatory function of the thickness of F2 layer and tends to an asymptotic positive value at large thickness. This is due to the formation of quantum well states in F2 induced by Andreev reflection at the F2/S interface and reflection at F1/F2 interface in antiparallel configuration. In the diffusive regime, if only spin-dependent scattering rates in the magnetic layers are considered (no difference in Fermi wave-vectors between spin up and down electrons) then the GMR is supressed due to the mixing of spin up and down electron-hole channels by Andreev reflection.Comment: 7 pages, 4 figures, submitted to Phys.Rev.Let

Shot Noise in Mesoscopic Transport Through Localised States

We show that shot noise can be used for studies of hopping and resonant tunnelling between localised electron states. In hopping via several states, shot noise is seen to be suppressed compared with its classical Poisson value $S_I=2eI$ ($I$ is the average current) and the suppression depends on the distribution of the barriers between the localised states. In resonant tunnelling through a single impurity an enhancement of shot noise is observed. It has been established, both theoretically and experimentally, that a considerable increase of noise occurs due to Coulomb interaction between two resonant tunnelling channels.Comment: 7 pages, 5 figures; Proceedings of the 10th Conference on Hopping and Related Phenomena (Trieste 2003); requires Wiley style files (included

Enhanced shot noise in resonant tunnelling via interacting localised states

In a variety of mesoscopic systems shot noise is seen to be suppressed in comparison with its Poisson value. In this work we observe a considerable enhancement of shot noise in the case of resonant tunnelling via localised states. We present a model of correlated transport through two localised states which provides both a qualitative and quantitative description of this effect.Comment: 4 pages, 4 figure

Kondo Conductance in an Atomic Nanocontact from First Principles

The electrical conductance of atomic metal contacts represents a powerful tool to detect nanomagnetism. Conductance reflects magnetism through anomalies at zero bias -- generally with Fano lineshapes -- due to the Kondo screening of the magnetic impurity bridging the contact. A full atomic-level understanding of this nutshell many-body system is of the greatest importance, especially in view of our increasing need to control nanocurrents by means of magnetism. Disappointingly, zero bias conductance anomalies are not presently calculable from atomistic scratch. In this Letter we demonstrate a working route connecting approximately but quantitatively density functional theory (DFT) and numerical renormalization group (NRG) approaches and leading to a first-principles conductance calculation for a nanocontact, exemplified by a Ni impurity in a Au nanowire. A Fano-like conductance lineshape is obtained microscopically, and shown to be controlled by the impurity s-level position. We also find a relationship between conductance anomaly and geometry, and uncover the possibility of opposite antiferromagnetic and ferromagnetic Kondo screening -- the latter exhibiting a totally different and unexplored zero bias anomaly. The present matching method between DFT and NRG should permit the quantitative understanding and exploration of this larger variety of Kondo phenomena at more general magnetic nanocontacts.Comment: 11 pages, 3 figures. Supplementary materials under request at [email protected]

Influence of s-d interfacial scattering on the magnetoresistance of magnetic tunnel junctions

We propose the two-band s-d model to describe theoretically a diffuse regime of the spin-dependent electron transport in magnetic tunnel junctions (MTJ's) of the form F/O/F where F's are 3d transition metal ferromagnetic layers and O is the insulating spacer. We aim to explain the strong interface sensitivity of the tunneling properties of MTJ's and investigate the influence of electron scattering at the nonideal interfaces on the degradation of the TMR magnitude. The generalized Kubo formalism and the Green's functions method were used to calculate the conductance of the system. The vertex corrections to the conductivity were found with the use of "ladder" approximation combined with the coherent-potential approximation (CPA) that allowed to consider the case of strong electron scattering. It is shown that the Ward identity is satisfied in the framework of this approximation that provides the necessary condition for a conservation of a tunneling current. Based on the known results of ab-initio calculations of the TMR for ballistic junctions, we assume that exchange split quasi-free s-like electrons with the density of states being greater for the majority spin sub-band give the main contribution to the TMR effect. We show that, due to interfacial inter-band scattering, the TMR can be substantially reduced even down to zero value. This is related to the fact that delocalized quasi-free electrons can scatter into the strongly localized d sub-band with the density of states at the Fermi energy being larger for minority spins compared to majority spins. It is also shown that spin-flip electron scattering on the surface magnons within the interface leads to a further decrease of the TMR at finite temperature.Comment: REVTeX4, 20 pages, 9 figures, 1 table, submitted to Phys.Rev.B; In Version 2 the text is substantially improved, the main results and conclusions left the sam