3 research outputs found
Anomaly close to an electronic topological semimetal-insulator transition in elemental fcc-Yb under pressure
The Lifshitz-type semimetal-insulator transition, which is a transition of the
electronic topology, has been considered as the most fundamental metal-
insulator transition. Here, we present resistivity measurements under pressure
in the vicinity of the quantum critical point of fcc Yb. We apply a previously
suggested scaling for this type of transition and identify its universality
class. Moreover, we observe an anomaly in the screening coefficient A of the T
2 term in the resistivity at low temperatures in the metallic phase. We
suggest an interpretation of this phenomenon as an effect of doping by Ca
impurities unintentionally present in the Yb crystals. The observed behavior
may very well be applicable to any doped system in the vicinity of such a
transition