SURFACE MORTHOLOGY AND OPTICAL PROPERTIES OF SiO2/Si SYSTEM PRECIPITATED TIN

SiO2/Si samples were irradiated with 131Xe ions using an ion cyclotron accelerator DC-60 at Astana, Kazakhstan. We have reported results on SnO nanoclusters deposition into SiO2por/Si structures. Afterwards, nanoporous channels were fulfilled with Sn using chemical deposition techniques. Morphology of synthesized Si/SiO2/Sn system was investigated using scanning electron microscopy