917 research outputs found
Giant Fluctuations of Coulomb Drag in a Bilayer System
We have observed reproducible fluctuations of the Coulomb drag, both as a
function of magnetic field and electron concentration, which are a
manifestation of quantum interference of electrons in the layers. At low
temperatures the fluctuations exceed the average drag, giving rise to random
changes of the sign of the drag. The fluctuations are found to be much larger
than previously expected, and we propose a model which explains their
enhancement by considering fluctuations of local electron properties.Comment: 10 pages, 4 figure
Electron-electron interactions in the conductivity of graphene
The effect of electron-electron interaction on the low-temperature
conductivity of graphene is investigated experimentally. Unlike in other
two-dimensional systems, the electron-electron interaction correction in
graphene is sensitive to the details of disorder. A new temperature regime of
the interaction correction is observed where quantum interference is suppressed
by intra-valley scattering. We determine the value of the interaction
parameter, F_0 ~ -0.1, and show that its small value is due to the chiral
nature of interacting electrons.Comment: 4 pages, 4 figures, 1 tabl
Conductance of p-n-p graphene structures with 'air-bridge' top gates
We have fabricated graphene devices with a top gate separated from the
graphene layer by an air gap--a design which does not decrease the mobility of
charge carriers under the gate. This gate is used to realise p-n-p structures
where the conducting properties of chiral carriers are studied. The band
profile of the structures is calculated taking into account the specifics of
the graphene density of states and is used to find the resistance of the p-n
junctions expected for chiral carriers. We show that ballistic p-n junctions
have larger resistance than diffusive ones. This is caused by suppressed
transmission of chiral carriers at angles away from the normal to the junction.Comment: to be published in Nano Letter
Re-entrant resonant tunneling
We study the effect of electron-electron interactions on the
resonant-tunneling spectroscopy of the localized states in a barrier. Using a
simple model of three localized states, we show that, due to the Coulomb
interactions, a single state can give rise to two resonant peaks in the
conductance as a function of gate voltage, G(Vg). We also demonstrate that an
additional higher-order resonance with Vg-position in between these two peaks
becomes possibile when interactions are taken into account. The corresponding
resonant-tunneling process involves two-electron transitions. We have observed
both these effects in GaAs transistor microstructures by studying the time
evolution of three adjacent G(Vg) peaks caused by fluctuating occupation of an
isolated impurity (modulator). The heights of the two stronger peaks exibit
in-phase fluctuations. The phase of fluctuations of the smaller middle peak is
opposite. The two stronger peaks have their origin in the same localized state,
and the third one corresponds to a co-tunneling process.Comment: 9 pages, REVTeX, 4 figure
Metallic and insulating behaviour of the two-dimensional electron gas on a vicinal surface of Si MOSFETs
The resistance R of the 2DEG on the vicinal Si surface shows an unusual
behaviour, which is very different from that in the (100) Si MOSFET where an
unconventional metal to insulator transition has been reported. The crossover
from the insulator with dR/dT0 occurs at a low
resistance of R_{\Box}^c \sim 0.04h/e^2. At the low-temperature transition,
which we attribute to the existence of a narrow impurity band at the interface,
a distinct hysteresis in the resistance is detected. At higher temperatures,
another change in the sign of dR/dT is seen and related to the crossover from
the degenerate to non-degenerate 2DEG.Comment: 4 pages, 4 figure
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