The resistance R of the 2DEG on the vicinal Si surface shows an unusual
behaviour, which is very different from that in the (100) Si MOSFET where an
unconventional metal to insulator transition has been reported. The crossover
from the insulator with dR/dT0 occurs at a low
resistance of R_{\Box}^c \sim 0.04h/e^2. At the low-temperature transition,
which we attribute to the existence of a narrow impurity band at the interface,
a distinct hysteresis in the resistance is detected. At higher temperatures,
another change in the sign of dR/dT is seen and related to the crossover from
the degenerate to non-degenerate 2DEG.Comment: 4 pages, 4 figure
