28 research outputs found
๋ฑ์ค์ฅ์์ ์์ฐ๋ฐ์ํ ์์ ์์ข ์ ๋ณ๋ฆฌ์กฐ์งํ์ ๋ฐ ๋ฉด์ญ์กฐ์งํํ์ ์ฐ๊ตฌ
ํ์๋
ผ๋ฌธ(์์ฌ)--์์ธ๋ํ๊ต ๋ํ์ :์์ํ๊ณผ ์์๋ณ๋ฆฌํ์ ๊ณต,1995.Maste
ํ๊ตญ์ธ ์ด์์ํ ์ํฌ์ฑ ํํผ๋ฐ๋ฆฌ์ฆ ํ์์์์ ์ VIIํ ์ฝ๋ผ๊ฒ ์ ์ ์ ๋์ฐ๋ณ์ด ๋ถ์
Dept. of Medicine/์์ฌ[ํ๊ธ]์ด์์ํ ์ํฌ์ฑ ํํผ๋ฐ๋ฆฌ์ฆ(dystrophic epidermolysis bullosa, ์ดํ DEB)์ ์ VIIํ ์ฝ๋ผ๊ฒ์ ์ ์ ์์ธ COL7A1์ ๋์ฐ๋ณ์ด์ ์ํด ๊ณ ์ ์์ฌ์ (anchoring fibril)์ ๊ฒฐํจ์ด ์๊ฒจ ์ฝํ ์๊ทน์๋ ์ฝ๊ฒ ์ํฌ๊ฐ ํ์ฑ๋๋ ์งํ์ด๋ค. COL7A1์ 32kb์ ํฌ๊ธฐ๋ก 118๊ฐ์ ์์(exon)์ผ๋ก ๊ตฌ์ฑ๋์ด ์์ผ๋ฉฐ ์ธ๊ฐ์ ๋จ์ผ ์ ์ ์๋ก์๋ ๊ฐ์ฅ ํฐ ์ ์ ์์ด๋ค. ์ VIIํ ์ฝ๋ผ๊ฒ์ ์ค์์ collagenous domain๊ณผ ์์ชฝ ์๋ฏธ๋
ธ๊ธฐ(amino) ๋ฐ ์นด๋ฅด๋ณต์๊ธฐ(carboxy) ๋ง๋จ์ ์ด๋ฃจ๋ non-collagenous domain(๊ฐ๊ฐ NC-1, NC-2)์ผ๋ก ์ด๋ฃจ์ด์ ธ ์๋ค. DEB๋ ์์ผ์์ฒด ์ฐ์ฑ ๋๋ ์ด์ฑ์ผ๋ก ์ ์ ๋๋ฉฐ, ์ผ๋ฐ์ ์ผ๋ก ์ด์ฑํ์ธ ๊ฒฝ์ฐ ์ฐ์ฑํ๋ณด๋ค ์์์ ์ผ๋ก ๋ ์ฌํ ์์์์์ ๋ํ๋ด์ง๋ง ๊ฐ์ ์ ์ ๋ฐฉ์์ ๊ฐ๋ ๊ฒฝ์ฐ์์๋ ๋์ฐ๋ณ์ด์ ์์น ๋ฐ ์ข
๋ฅ์ ๋ฐ๋ผ ๋ค์ํ ์์์์์ ๋ํ๋ผ ์ ์๋ค. ์ผ๋ก๋ก ์ด์ฑํ DEB ์ค ์ฌํ ์์์์์ ๋ณด์ด๋ ๊ฒฝ์ฐ ๋ ๋๋ฆฝ์ ์ ์ ๋ชจ๋์์ ์กฐ๊ธฐ ์ค๋จ ์ฝ๋(premature termination codon, PTC)์ด ์๋ ๋ฐ๋ฉด, ์ฐ์ฑํ์์๋ collagenous domain์ glycine ์นํ ๋์ฐ๋ณ์ด(glycine substitution, GS)๋ฅผ ๋ณด์ด๋ ๊ฒฝ์ฐ๊ฐ ๋ง๋ค. ํ์ฌ๊น์ง 300๊ฐ ์ด์์ COL7A1 ๋์ฐ๋ณ์ด๊ฐ ๋ณด๊ณ ๋์์ผ๋ ์์ง ์ ํํ ์ ์ ํ-ํํํ์ ๊ด๊ณ๋ ์๋ ค์ ธ ์์ง ์๋ค. ๋์ฑ์ด ๊ตญ๋ด์ DEB์ ๋ํ ์ฐ๊ตฌ๋ ๊ฐํ์ ์ธ ์ฆ๋ก๋ณด๊ณ ์ธ์๋ ์๋ ์ค์ ์ด๋ค.๋ณธ ์ฐ๊ตฌ๋ 18๊ฐ๊ณ(์ฐ์ฑํ 4๊ฐ๊ณ, ์ด์ฑํ 14๊ฐ๊ณ)๋ฅผ ๋์์ผ๋ก ํ์๊ณ , ์ด 33๊ฐ์ ๋๋ฆฝ์ ์ ์(ํ ๊ฐ๊ณ์์ 3๊ฐ์ ๋์ฐ๋ณ์ด ๋ฐ๊ฒฌ๋ ๊ฒ ํฌํจ)์์ 30๊ฐ์ ๋์ฐ๋ณ์ด๋ฅผ ๋ฐ๊ฒฌํ์ฌ 90.9%์ ๋ฐ๊ฒฌ์จ์ ๋ณด์๋ค. ์ด 24๊ฐ์ง์ ๋์ฐ๋ณ์ด ์ค ๊ธฐ์กด์ ๋ณด๊ณ ๋์ง ์์ ์๋ก์ด ๋์ฐ๋ณ์ด๋ 10๊ฐ์ง ์์ผ๋ฉฐ, PTC 8๊ฐ, insertion/deletion 6๊ฐ, GS 5๊ฐ, alternative splicing 5๊ฐ์๋ค. ๋ฐ๋ณต์ ์ผ๋ก ๋ํ๋๋ ๋์ฐ๋ณ์ด(recurrent mutation)๋ R669X, G798R, G2043R, G2204S, E2857X์์ผ๋ฉฐ ์ ์ฒด ๋์ฐ๋ณ์ด์ 30%๋ฅผ ์ฐจ์งํ์๋ค. ๋ฐ๊ฒฌ๋ ๊ฐ ๋์ฐ๋ณ์ด์ ๋ํด์ COL7A1 mRNA์ splicing์ ๋ํ ์ํฅ์ ์์๋ณด๊ธฐ ์ํด in silico study๋ฅผ ์ํํ์์ผ๋ฉฐ donor ํน์ acceptor site์ Ri ๊ฐ์ ๋ณํ๊ฐ 10๊ฐ์์ ๊ด์ฐฐ๋์๋ค. 10๊ฐ์ ๋์ฐ๋ณ์ด์์ Ri ๊ฐ์ ์ ์ํ ๋ณํ๋ 1094-G>C, 2392G>A (G798R), 6899A>G (Q2300R), 341G>T (G114V), 682+1G>A์ 5๊ฐ์์ ๋ํ๋ฌ๋ค. ์์์์์ ๋ฐ๋ฅธ ๋์ฐ๋ณ์ด์ ์์์ ๋ค์๊ณผ ๊ฐ์๋ค. 4๋ช
์ ์ฐ์ฑํ์์ 3๊ฐ์ GS์ 1๊ฐ์ alternative splicing์ ๋ฐ๊ฒฌํ์๋ค. ์ด์ฑํ์ ๊ฒฝ์ฐ ์์์์์ ๊ฒฝ์ฆ(mitis or mild), ์ค๋ฑ์ฆ(moderate severe), ์ค์ฆ(Hallopeau-Siemens or severe)์ผ๋ก ๋๋์์ ๋ ๊ฒฝ์ฆ์์๋ alternative splicing/GS, alternative splicing/PTC์ ๋ ์๊ฐ ์์๊ณ , ์ค๋ฑ์ฆ ๋ฐ ์ค์ฆ์์๋ PTC๊ฐ ๊ฐ์ฅ ๋ง์ด ๊ด์ฐฐ๋์๋ค. 1์์์ Transient bullous dermolysis of newborn์ ์์์์์ ๋ณด์์ผ๋ฉฐ ๋์ฐ๋ณ์ด๋ ์ด์ฑํ์ผ๋ก G798R/6246del27์ ์กฐํฉ์ด์๋ค.
[์๋ฌธ]Dystrophic epidermolysis bullosa (DEB) is characterized by mucocutaneous blistering, scarring and nail dystrophy following minor trauma. DEB is caused by mutations in the COL7A1 encoding type VII collagen, which is the major component of the anchoring fibrils. DEB occurs as either autosomal dominant or recessive trait, usually recessive form having more severe clinical presentation. However, the phenotypical variability also depends on the different type of mutations in DEB alleles and their position within the gene. To date, more than 300 different mutations have been reported, but we cannot predict the exact genotype-phenotype correlation. Furthermore, no systematic study has thus far revealed detailed delineation of COL7A1 mutations in Korean DEB patients except several case reports.In this study, we performed mutational analysis of 18 distinct Korean DEB families (4 dominant and 14 recessive). The result demonstrated 30 pathogenic COL7A1 mutations among total 33 alleles. It included total 24 kinds of COL7A1 mutation: 8 premature termination codons (PTC), 6 insertion/deletion frameshift mutations, 6 glycine substitutions (GS), 4 alternative splicings. We found out 10 novel mutations and 5 different recurrent mutations, R669X, G798R, G2043R, G2204S and E2857X. A computer analysis was carried out to assess the potential for each mutation to affect the splicing of the COL7A1 mRNA. It predicted information contents score (Ri) changes in 10 distinct mutations. Among the 10 mutations, 1094-G>C, 2392G>A (G798R), 6899A>G (Q2300R), 341G>T (G114V), 682+1G>A show significant Ri changes, which was confirmed to induce cryptic splicing in the previous reports or in this study. We classified the patients into four categories to investigate the genotype-phenotype correlation: dominant DEB; mild (mitis type), moderate severe, severe recessive DEB (Hallopeau-Siemens type). The mutations of DDEB families were 3 and 1 alternative splicing, and two patients of mild RDEB had compound heterozygosity of alternative splicing/GS and alternative splicing/PTC combinations. Most of mutations observed in moderate severe RDEB and HS-RDEB are PTC-causing mutations, which did not show any difference between two groups. This study also included 1 patient with rare variant of DEB, transient bullous dermolysis of newborn (TBDN), which was compound heterozygote for G798R and 6246del27.ope
์ํ๋ํธ ์ง๋์ฃผ ์ฐ๊ฒฐ๋ฐฉ์, ์ํ๋ํธ์ ์ง๊ฒฝ ๋ฐ ์ง๋์ฃผ ์ฐ๊ฒฐ๋ถ์์ ์ง๊ฒฝ ์ฐจ์ด์ ๋ฐ๋ฅธ ์๋ ฅ๋ถํฌ์ ๊ดํ ์ผ์ฐจ์ ์ ํ์์๋ถ์ ์ฐ๊ตฌ
ํ์๋
ผ๋ฌธ(์์ฌ)--์์ธ๋ํ๊ต ๋ํ์ :์น์ํ๊ณผ ์น๊ณผ๋ณด์ฒ ํ์ ๊ณต,2003.Maste
Crack-free and high efficiency III-V multi-junction solar cell grown on vicinal Si(100) substrate
ํ์๋
ผ๋ฌธ (๋ฐ์ฌ)-- ์์ธ๋ํ๊ต ๋ํ์ : ์ฌ๋ฃ๊ณตํ๋ถ, 2017. 2. ์ค์์ค.The primary goal of this research is to fabricate crack-free and high efficiency III-V multi-junction solar cells on Si. In order to achieve the final goals, this research has been focused on three parts: growth of GaAs on Si using LP-MOCVD, investigation of impacts of crack formation on the solar cell device, and the fabrication of crack-free device.
First, the device structures were grown on Si using LP-MOCVD using two-step growth modes, InGaAs/GaAs superlattice structure, and cycle annealing. By using two-step method, pure GaAs with flat surfaces were successfully grown on Si suppressing SK growth modes. In order to reduce the threading dislocation density (TDD) in GaAs layer, the in-situ cycle-annealing was performed in MOCVD chamber followed by In0.1Ga0.9As/GaAs structure. During the in-situ annealing, the AsH3 gases was introduced to prevent the evaporation of As from the GaAs layer. As the annealing-temperature increased from 700 to 820 oC, crystal quality was improved. The final GaAs buffer layer showed 6.0 x 10cm-7 value of TDD, and 146 arc sec FWHM of (004) rocking curves.
On the top of buffer layer, the III-V GaAs solar cell epitaxial layers were grown. The device performance were measured under AM 1.5g condition, the conversion efficiency was 10.14, and 15.47 %, for the device on the buffer layer grown with only two-step growth modes, and for the device on the buffer layer grown on two-step growth modes, and InGaAs/GaAs structure, and cycle annealing, respectively. The improvement of efficiency was due to the enhancement of short-circuit current density and open-circuit voltage. Based on the analysis of time resolved photoluminescence and external quantum efficiency measurements, these enhancements were due to the increase of minority carrier lifetime from 0.096 to 0.9 ns. The total thickness of epitaxial layer was 5.8 m including 2.4 m GaAs buffer layer on Si substrate, which was above the critical thickness of crack formation. All of devices contained the crack arrays, where the crack linear density was varied from 4 to 126 cm-1.
The impacts of crack formations on the device performance was investigated using TCAD simulations. Simulation results predicted that crack formations have the significant impacts on conversion efficiency especially due to reduction of open-circuit voltage in photovoltaic cells. At crack linear density with 200 cm-1, open-circuit voltage can be degraded to 86 % resulting in reduction of conversion efficiency from 24 % to 17% at 1105 cm-2 value of TDD. Based on the properties of recombination process at the GaAs surface, I assumed that the cleaved {110} surfaces have high surface recombination velocity as high as 3106 cm/s. This approach predicted reasonable the efficiency of GaAs photovoltaic cells on Si substrate.
Finally, the control of crack propagation was investigated using stress concentrators in order to obtain crack-free III-V compound solar cells on Si. The notch type patterns introduced into the Si substrate were found to successfully generate the crack-free areas of a 2 mm ร 2 mm size separated by the cracks for the 5.8 m-thick III-V compound semiconductor layers on it. The population of crack arrays was investigated in the wafer scale. The crack linear density was significantly reduced from 22.25 cm-1 to 1.10 cm-1 by controlling crack arrays. The value of 1.10 cm-1 crack density was due to unintentional crack arrays, which were generated with surface defects or particles underlying before growth.
By measuring dark I-V curves between adjacent cells, the individual solar cells on the crack-free areas were confirmed to be electrically isolated one another with the well-defined crack array, replacing conventional Mesa isolation process, which has undercut issue and area loss. The best cell efficiency was increased from 16.44 % for the device containing 16.8 cm-1 crack linear density, to 18.17 % for the device with crack-free conditions under AM 1.5g condition. The maximum efficiency under concentration was 19.8, 18.5, and 23.5 % for crack-free device, the device containing 16.8 cm-1 crack linear density, and the reference GaAs/GaAs cell, respectively. Above 10 suns of concentration level, cell efficiency reduced with the reduction of fill factor. The J-V curves showed that the reduction of fill factor was due to the parasitic resistance in the device. Based on analysis of dark J-V curves, the parasitic resistance was 0.43. . In order to increase maximum efficiency, the parasitic resistance should be reduced with the optimized metal grid design and the metal deposition process for the centration operationCHAPTER 1. INTRODUCTION AND MOTIVATION 1
1.1 Solar energy 1
1.2 Solar cells 3
1.3 Materials for multi-junction solar cell 10
1.4 Space and terrestrial applications 14
1.5 Integration of III-V based multi-junction solar cell on Si 18
1.6 Impacts of cell cost reduction on CPV module price 23
1.7 Technical issues related to multi-junction solar cells on Si 25
1.8 Crack formations in multi-junction solar cells 30
1.9 Research objective 35
1.9 References 36
CHAPTER 2. EXPERIMENTS AND ANALYSIS 38
2.1 Epitaxial growth using MOCVD 38
2.2 Sample preparation 41
2.3 Analysis tools 41
2.4 Fabrication process 45
CHAPTER 3. GROWTH OF GAAS BUFFER LAYER ON THE SI SUBSTRATE FOR SOLAR CELL OPERATION 48
3.1 Growth method of GaAs on Si substrate 48
3.2 Two-step GaAs growth on Si (100) substrates 51
3.3 Multi-annealing steps with the insertion of strained superlattice 58
3.4 Final GaAs buffer layer grown on Si (100) 64
3.5 References 68
CHAPTER 4. SOLAR CELL OPERATION ON THE GAAS BUFFER ON SI 69
4.1 Introduction 69
4.2 Experimental details 74
4.3 Performance of GaAs single junction solar cell on Si 77
4.4 Crack formations in GaAs solar cells on Si 82
4.5 Summary 86
4.6 References 87
CHAPTER 5. IMPACTS OF CRACK FORMATION ON THE DEVICE 88
5.1 Introduction 88
5.2 Finite element method for the analysis 90
5.3 Proposed model and back ground of simulations 91
5.4 Simulation parameters and conditions 96
5.5 Simulation results and discussions 98
5.6 Summary 104
5.7 References 105
CHAPTER 6. CRACK-FREE III-V GAAS SOLAR CELLS ON THE SI SUBSTRATE 106
6.1 Introduction 106
6.2 Making notch patterns and analysis of stress concentration 106
6.2.1 Fracture strength and biaxial stress in GaAs on Si system 106
6.2.2 Design of notch patterns for crack initiation 110
6.2.3 Fabrication process of notches patters on Si substrate 112
6.3 Periodic crack arrays 118
6.4 Process steps for crack-free solar cells 121
6.5 Results and discussion 123
6.5.1 Control of crack arrays with notches 123
6.5.2 Self-isolation with well defined crack-array 129
6.5.3 Crack-free solar cell performance 132
6.5.4 Crack-free solar cells for terrestrial applications 136
6.6 Summary 143
6.7 References 143
CHAPTER 7. CONCLUSIONS 146
๊ตญ ๋ฌธ ์ด ๋ก 148
PUBLICATION LIST 151Docto
A Study on the Location Analysis Using Spatial Analysis and Ordered Weighted Averaging(OWA) Operator Weighting Functions
ํด์์ด์ก๊ณผ ์ก์์ด์ก์ ์ ์ ์ด ๋๋ ํญ๋ง์ ํญ๋ง์์ค๋ก ๊ตฌ์ฑ๋์ด ์๋๋ฐ, ์ด ํญ๋ง์์ค์ ์ด์ฉํจ์ผ๋ก์ ์ ๋ฐ์ ์์ ํ ์
์ถํญ, ํ๋ฌผ์ ์ ยท ์ ํ ์์
์ด ์ด๋ฃจ์ด์ง๊ฒ ๋๋ค. ํญ๋ง์์ค์๋ ์์ญ์์ค, ์ธ๊ณฝ์์ค, ์ด์ก์์ค๋ก ๊ตฌ์ฑ๋ ๊ธฐ๋ณธ์์ค๊ณผ, ๊ณ๋ฅ์์ค, ํญํ๋ณด์กฐ์์ค, ํ์ญ์์ค, ์ ๋ฐ๋ณด๊ธ์์ค, ์น๊ฐ์ด์ฉ์์ค ๋ฑ์ผ๋ก ๊ตฌ์ฑ๋ ๊ธฐ๋ฅ์์ค๋ก ๊ตฌ์ฑ๋๋ค. ํด์๊ตํต ํ๋ฆ๊ณผ ๋ฐ์ ํ ๊ด๋ จ์ด ์๋ ํญ๋ก, ์ ๋ฐ์ง์ ์์ญ์์ค๊ณผ ํญ๋กํ์ง, ์ ํธ, ์กฐ๋ช
๊ณผ ๊ฐ์ ํญํ๋ณด์กฐ์์ค์ ์
์ง ๋ฐ ์ต์ ๊ด๋ฆฌ๋ ํด์๊ตํต ํ๋ฆ์ ์ํํ ํ๊ณ ์ ๋ฐ์ ์์ ์ดํญ์ ์ฉ์ดํ๊ฒ ํ๋ฏ๋ก ๋งค์ฐ ์ค์ํ ๋ฌธ์ ๋ผ ํ ์ ์๋ค.
ํญ๋ง์์ค ์ ๋น๋ฅผ ์ํ ๊ธฐ์กด ์ฐ๊ตฌ์์๋ ํด์๊ตํต์ฒด๊ณ๋ฅผ ์ ๋ฐ์ ์ผ๋ก ๋ถ์ํ๊ณ ๊ฐ์ ์ ์ ์ ์ํ๋ ํด์๊ตํต ํ๊ฒฝํ๊ฐ๊ฐ ์ด๋ฃจ์ด์ง๊ณ ์์ผ๋ฉฐ, ๋งค๋ฆฝ์ง ๊ฑด์ค, ํด์ ๋ฐฐ๊ด ์ด์ค, ๋ถ๋ ๊ฑด์ค, ์ ๋ฐ์ง ํ์ฅ ๋ฑ ์ ๋ฐ์ ํด์๊ตํต์ ์ํฅ์ ์ฃผ๋ ๊ตฌ์กฐ๋ฌผ ์ค์น์ ๋ฐ๋ฅธ ํ๊ธํจ๊ณผ๋ฅผ ํ์
ํ๊ธฐ ์ํด ์ ๋ฐ์กฐ์ข
์๋ฎฌ๋ ์ด์
์ ์ํํ๊ณ ์๋ค. ํญ๋ง์์ค ์ ๋น์ ๊ดํ ๊ธฐ์กด ์ฐ๊ตฌ์์๋ ํญ๋ง์ ์์ฐํ๊ฒฝ ๋ฐ ๊ตํต๋์ ์กฐ์ฌํ๊ฑฐ๋, ๋์ ์ฌ, ํญํด์ฌ ๋ฑ ์ ๋ฌธ๊ฐ ์๊ฒฌ์ ํ ๋๋ก ๊ณํ์ ์๋ฆฝํ๊ณ ์๋ค. ๊ทธ๋ฌ๋ ๊ธฐ์กด ์ฐ๊ตฌ์์๋ ์ ๋ฐ์ ๊ตํต ์์ ์ฑ์ ๊ฐ์กฐํ๋ ๋ฐ๋ฉด ํญ๋ง์์ค ์
์ง์ ๊ดํ ์ธ๋ถ์์ธ์ ๊ณ ๋ ค๊ฐ ๋ถ์กฑํ๋ฉฐ, ๋ถ์๊ฒฐ๊ณผ์์ ์์ฌ๊ฒฐ์ ์ผ๋ก ์ฐ๊ฒฐ๋๋ ๊ณผ์ ์ ์์ฌ๊ฒฐ์ ์์ ์ฃผ๊ด์ ์๊ฒฌ๊ฐ์
์ด ๋๊ณ , ์ธ๋ถํ๊ฒฝ์์ธ์ ๋ฐ๋ฅธ ์์ฌ๊ฒฐ์ ์ ๋ต์ ์กฐ์ ์ด ์ด๋ ค์ด ๋จ์ ์ด ์๋ค.
ํญ๋ง์์ค ์ ๋น ๋ฌธ์ ๋ ์ ๋ฐ์ ์กฐ์ข
์์ ์ฑ๋ฟ๋ง ์๋๋ผ ํญ๋ง ๊ด๋ จ์์ ์ดํด๊ด๊ณ, ํญ๋ง๊ฐ๋ฐ ๊ณํ, ํ ํญ๋ง์์ค๊ณผ์ ์ ํฉ๋ ๋ฑ ๋ค์ํ ์ธ๋ถ์์ธ์ด ๋ฐ์๋ ์ ์์ผ๋ฏ๋ก ๊ณต๊ฐ์ ๋ค๊ธฐ์ค์์ฌ๊ฒฐ์ ๊ด์ ์ ์ ๊ทผ๋ฒ์ด ํ์ํ๋ค. ๊ณต๊ฐ์ ๋ค๊ธฐ์ค์์ฌ๊ฒฐ์ ๋ฒ์ ๊ณต๊ฐ๋ฐ์ดํฐ๋ฅผ ์ด์ฉํ ๊ณต๊ฐ๋ถ์๊ณผ ๋ค์ํ ๊ธฐ์ค์ ๊ณ ๋ คํ์ฌ ๋ฌธ์ ์ ํด๊ฒฐ์ฑ
์ ๋ชจ์ํ๋ ๋ค๊ธฐ์ค ์์ฌ๊ฒฐ์ (MCDM : Multicriteria Decision Making)์ ๊ฒฐํฉํ ๋ฐฉ๋ฒ์ด๋ค. ๋ณธ ์ฐ๊ตฌ์์๋ ํญ๋ง์์ค์ ๋ฐฐ์น์ ๊ด๋ จ๋ ๊ณต๊ฐ๋ฐ์ดํฐ๋ฅผ ํ์ฉํ ๊ณต๊ฐ๋ถ์๊ณผ ํญ๋ง์์ค ์
์ง์ ์ ์ ์ํฅ์ ์ฃผ๋ ์์ธ์ ๊ฐ์ค์น ๊ฒฐ์ , ์์ฌ๊ฒฐ์ ์์ ์์ฌ๊ฒฐ์ ์ ๋ต์ ๋ฐ๋ฅธ ์ ์ฉ๋ฒ์ผ๋ก ๊ตฌ์ฑ๋ ํญ๋ง์์ค์ ๊ณต๊ฐ์ ๋ค๊ธฐ์ค ์์ฌ๊ฒฐ์ ๋ถ์๋ฒ์ ๊ฐ๋ฐํ์์ผ๋ฉฐ, ๋ณธ ๋ถ์๋ฒ์ ์ธ์ฐํญ์ ์ค์ํ ๋๊ธฐ์ ๋ฐ์ง ์
์ง์ ์ ๋ฌธ์ ์ ์ ์ฉํ์๋ค. ์ธ์ฐํญ์ ์ ๊ตญํ๋ฌผ์ 37%๋ฅผ ์ฒ๋ฆฌํ๋ ๊ฒฝ์ ์ ์ผ๋ก ์ค์ํ ํญ๋ง์ผ๋ก, ์ฒ๋ฆฌํ๋ฌผ ์ค ์ํํ๋ฌผ์ด 81%๋ฅผ ์ฐจ์งํ๊ณ ์๊ณ , ํญ๊ณ ๋ด์์ ์ํํ๋ฌผ์ ํด์ํ์ ์์
์ด ์ด๋ฃจ์ด์ง๊ณ ์์ด ์ ๋ฅ์ ์ถ์ฌ๊ณ ์ ์ํ์ฑ์ด ๋๋ค. ํนํ, ์ธ์ฐํญ์ ์ค์ํ ์ ๋ฐ ์ ๋ฐ์ง์ธ M1~M7 ์ ๋ฐ์ง์๋ ์ ๋ฐ์ ๋ฐ์ด ์ง์คํ์ฌ ๋๋จํ ํผ์กํ๊ณ ์ ์ ํ์ฉ ์ฒ์๋ฅผ ์ด๊ณผํ์ฌ ์ ๋ฐํ๊ณ ์๋ค. ๋ํ, ์จ์ฐํญ์ ์
ํญํ๋ ์ ๋ฐ์ด M์ ๋ฐ์ง๋ฅผ ์ด์ฉํจ์ผ๋ก์ 1ํญ๋ก๋ฅผ ํก๋จํ๊ณ , SK 1๋ฒ SBM ๋ฐ ๋๋ฐฉํ์ ๋ฑ ์กฐ์ ์์ญ์ด ํ์ํ ์์ญ์ ํญ๋ด ์ด๋ํจ์ผ๋ก์ ์ฌ๊ณ ์ ์ํ์ฑ์ ์ฆ๊ฐ์ํค๊ณ ์๋ค. ๋ํ ์จ์ฐ ์ ์ ํญ ๊ฐ๋ฐ๋ก ์ธํ์ฌ ์ธ์ฐํญ ์ ๋ฐ์ง๊ฐ ์ข์์ง ๊ฒ์ด๋ฏ๋ก ์ ๋ฐ์ง ํ๋ณด๊ฐ ์๊ธํ ํํธ์ด๋ค.
๋ณธ ์ฐ๊ตฌ์์๋ ํด์๊ตํต๊ณผ ๋ฌผ๋ฅํ๋ฆ์ ์ํฅ์ ์ฃผ๋ ํญ๋ง์์ค์ ์
์ง์์ฌ๊ฒฐ์ ์ ์ํด ๊ณต๊ฐ๋ถ์๊ณผ ์์๊ฐ์ค์น ๊ฒฐ์ ๋ฒ์ ์ด์ฉํ ๊ณต๊ฐ์ ๋ค๊ธฐ์ค์์ฌ๊ฒฐ์ ๊ธฐ๋ฒ์ ๊ฐ๋ฐํ์๋ค. ๊ทธ๋ฆฌ๊ณ , ์ค์ํ ๋๊ธฐ์ ๋ฐ์ง ํ์ฅ์ด ์๊ตฌ๋๋ ์ธ์ฐํญ์ ๋๊ธฐ์ ๋ฐ์ง ์
์ง ๊ฒฐ์ ๋ฌธ์ ์ ์ ์ฉํ์ฌ, ์์ฌ๊ฒฐ์ ์์ ์์ฌ๊ฒฐ์ ์ ๋ต๋ณ ๋๊ธฐ์ ๋ฐ์ง ์ฐ์ ์์๋ฅผ ๋์ถํ์๋ค. ๋ณธ ์ฐ๊ตฌ์์ ๊ฐ๋ฐํ ๊ณต๊ฐ์ ๋ค๊ธฐ์ค์์ฌ๊ฒฐ์ ๊ธฐ๋ฒ์ ํญ๋ง์์ค ์
์ง ๊ฒฐ์ ์ ๋ฌผ๋ฆฌ์ ์ผ๋ก ์ํฅ์ ์ฃผ๋ ๊ณต๊ฐ๋ฐ์ดํฐ๋ฅผ ์ด์ฉํ์ฌ, ์ค์ ์ ์ฉ ๊ฐ๋ฅํ ์
์ง ํ๋ณด์ง๋ฅผ ๋์ถํ์์ผ๋ฉฐ, Fuzzy AHP ๊ธฐ๋ฒ์ ํตํ ์
์ง์์ธ ๊ฐ์ค์น ์ฐ์ , ์์ ๊ฐ์ค์น ๊ฒฐ์ ๋ฒ์ 7๊ฐ์ง ์ข
๋ฅ์ ์์ฌ๊ฒฐ์ ์ ๋ต์ ๋ฐ๋ฅธ ํ๋ ฅ์ ์ธ ๊ฒฐ๊ณผ๋ฅผ ๋์ถํ์๋ค.์ 1 ์ฅ ์ ๋ก
1.1 ์ฐ๊ตฌ์ ๋ฐฐ๊ฒฝ ๋ฐ ๋ชฉ์
1.2 ์ฐ๊ตฌ ๋ฐฉ๋ฒ ๋ฐ ์ ์ฐจ
์ 2 ์ฅ ์ ํ ์ฐ๊ตฌ ๊ณ ์ฐฐ
2.1 ์
์ง๋ถ์
2.1.1 ๊ฐ๋
๋ฐ ํน์ง
2.1.2 ์ ํต์ ์ธ ์
์ง์ฐ๊ตฌ
2.2 ํด์๊ตํต์์คํ
์ฐ๊ตฌ
2.2.1 ํด์๊ตํต ๋ฐ ํด์๊ตํต๊ณตํ
2.2.2 ํด์๊ตํตํ๊ฒฝ ํ๊ฐ์ฐ๊ตฌ
2.3 ๊ณต๊ฐ ๋ถ์
2.3.1 ๊ณต๊ฐ ์์ฌ๊ฒฐ์ ๋๊ตฌ
2.3.2 ์
์ง๋ถ์์ ์ํ ๊ณต๊ฐ๋ถ์ ๊ธฐ๋ฒ
2.3.3 ๊ณต๊ฐ์ ๋ค๊ธฐ์ค ์์ฌ๊ฒฐ์ ๋ฐฉ๋ฒ๋ก
2.4 ๋ค๊ธฐ์ค ์์ฌ๊ฒฐ์ ๋ชจํ
2.4.1 ๋ค๊ธฐ์ค ์์ฌ๊ฒฐ์ ๋ชจํ์ ์ฐ๊ตฌ๊ฐ์น
2.4.2 ๋ค๊ธฐ์ค ์์ฌ๊ฒฐ์ ๋ชจํ์ ์ ํ๋ณ ํน์ง
์ 3 ์ฅ ํญ๋ง ์์ค
3.1 ํญ๋ง ๊ณํ ๋ฐ ํญ๋ง์์ค์ ๊ฐ์
3.2 ๋๊ธฐ์ ๋ฐ์ง ์ค๊ณ
3.3 ํญ๋ก์ ์ ํ์ฅ
์ 4 ์ฅ ๋๊ธฐ์ ๋ฐ์ง ํ๊ฐ๊ธฐ๋ฒ
4.1 ๊ณต๊ฐ ๋ถ์ ๊ธฐ๋ฒ
4.1.1 GIS ์ ์ ๋ฐ ๊ตฌ์ฑ์์
4.1.2 GIS์ ๊ตฌ์ฑ์์
4.1.3 GIS ๊ธฐ๋ฅ
4.2 ๊ฐ์ค์น ์ฐ์ ๊ธฐ๋ฒ
4.2.1 ํผ์ง์ด๋ก
4.2.2 AHP ๊ธฐ๋ฒ
4.2.3 ํผ์ง ๊ณ์ธต๋ถ์๋ฒ(Fuzzy AHP)
4.3 ์์ฌ๊ฒฐ์ ์ ๋ต ์ ํ๊ธฐ๋ฒ
4.3.1 ๊ฐ์ค์น ๊ฒฐํฉ ๊ธฐ๋ฒ์ ์ข
๋ฅ
4.3.2 ์์๊ฐ์ค์น ํ๊ท ๋ฒ(OWA)
์ 5 ์ฅ ์ธ์ฐํญ ๋๊ธฐ ์ ๋ฐ์ง ์
์ง ๋ถ์
5.1 ์ธ์ฐํญ ๊ฐ์
5.1.1 ์ธ์ฐํญ์ ์์ฐํ๊ฒฝ
5.1.2 ์ธ์ฐํญ ์ผ๋ฐํํฉ
5.1.3 ์์ฝ
5.2 ๋๊ธฐ ์ ๋ฐ์ง ์ ์ ์์ธ ๋ถ์
5.2.1 ํญ๋ง์์ค ๊ด๋ จ ์ฐ๊ตฌ ๋ฌธํ
5.2.2 ๋๊ธฐ ์ ๋ฐ์ง ์ ํ์์ธ ์ ๋ฆฌ
5.3 ๊ณต๊ฐ๋ถ์์ ์ด์ฉํ ๋๊ธฐ์ ๋ฐ์ง ํ๋ณด์ง ์ ์
5.3.1 ์ํ ๋ฐฉ๋ฒ
5.3.2 ํ๊ฐ๊ธฐ์ค๋ ๊ฐ๋ฐ
5.3.3 ํ๊ฐ๊ธฐ์ค๋์ ํ์คํ
5.4 ํ๋ณด์ง ์
์งํ๊ฐ ๋ฐ ์ ์ง ์ ์
5.4.1 ๋๊ธฐ์ ๋ฐ์ง ์ ์ ์์ธ ๊ณ์ธต๋
5.4.2 ์ค๋ฌธ๋ถ์ ์ํ
5.4.3 ํ๊ฐ์น ๊ณ์ฐ
5.4.4 ์์๊ฐ์ค์นํ๊ท ๋ฒ ์ ์ฉ
5.4.5 ์์ฝ์ ๋ฆฌ
์ 6 ์ฅ ๊ฒฐ ๋ก
6.1 ์ฐ๊ตฌ๊ฒฐ๊ณผ ์ ๋ฆฌ
6.2 ์ฐ๊ตฌ์ ํน์ง ๋ฐ ํ๊ณ์
โป ๋ถ๋ก - ์ค๋ฌธ
๋ฐฐ์์ค๊ธฐ์ธํฌ๋ฅผ ์ด์ฉํ ์ฌ๊ทผ์ธํฌ ๋ถํ์ด์ง ์ ๊ทํํฉ๋ฌผ์ ์์ฉ๊ธฐ์ ์ฐ๊ตฌ
Thesis(doctors) --์์ธ๋ํ๊ต ๋ํ์ :์์ํ๊ณผ,2008.Docto
INFLUENCE OF IMPLANT-ABUTMENT INTERFACE DESIGN, IMPLANT DIAMETER AND PROSTHETIC TABLE WIDTH ON STRENGTH OF IMPLANT-ABUTMENT INTERFACE : THREE-DIMENSIONAL FINITE ELEMENT ANALYSIS
Statement of problem. Higher incidence of prosthetic complications such as screw loosening, screw fracture has been reported for posterior single tooth implant. So, there is ongoing research regarding stability of implant-abutment interface. One of those research is increasing the implant diameter and prosthetic table width to improve joint stability. In another part of this research, internal conical type implant-abutment interface was developed and reported joint strength is higher than traditional external hex interface. Purpose. The purpose of this study is to compare stress distribution in single molar implant between external hex butt joint implant and internal conical joint implant when increasing the implant diameter and prosthetic table width : 4mm diameter, 5mm diameter, 5mm diameter/6mm prosthetic table width. Material and method. Non-linear finite element models were created and the 3-dimensional finite element analysis was performed to see the distribution of stress when 300N static loading was applied to model at off-axis angle. Results. The following results were obtained : 1. Internal conical joint showed lower tensile stress value than that of external hex butt joint. 2. When off-axis loading was applied, internal conical joint showed more effective stress distribution than external hex butt joint. 3. External hex butt joint showed lower tensile stress value when the implant diameter was increased. 4. Internal conical joint showed lower tensile stress value than external hex butt joint when the implant diameter was increased. 5. Both of these joint mechanism showed lower tensile stress value when the prosthetic table width was increased. Conclusion. Internal conical joint showed more effective stress distribution than external hex joint. Increasing implant diameter showed more effective stress distribution than increasing prosthetic table width