6 research outputs found
A Robust Ship Scheduling based on Mean-Variance Optimization Model
Given a set of available carriers under control, and a set of cargoes to be transported from origin to destination, a robust ship scheduling to minimize a mean-variance objective function with a required level of profit can be modeled as a quadratic programming problem. The Single index model is used to calculate the variance-covariance matrix efficiently. Computational experiments concerning relevant maritime transportation problems are performed on randomly generated configurations of tanker scheduling in bulk trade and some significant results are reported. The results of experiments confirm that the model is validated and its effectiveness is satisfactorily demonstrated.1. μ λ‘ 1
1.1 μ°κ΅¬μ λ²μ 2
1.2 μ°κ΅¬μ λ°©λ² 4
2. λΆμ κΈ°μ μ΄νμ μ λ°μ΄νμΌμ κ³ν λ¬Έμ 6
2.1 μ νμ°κ΅¬ 6
2.2 λΆμ κΈ°μ ν΄μ¬μμ‘ μ§ν©ν¨νΉ λͺ¨ν μ°κ΅¬ [SPK λͺ¨ν] 8
3. μνμ κ³ λ €ν νκ· -λΆμ°(Mean-variance) λͺ¨ν 10
3.1 νκ· -λΆμ° λͺ¨ν (Mean-Variance Model) 10
3.2 λ¨μΌμ§μλͺ¨ν (Single Index Model) 12
4. μ΄μ°¨κ³νλ²μ μ΄μ©ν λ‘λ²μ€νΈ μ λ°μ΄νμΌμ κ³ν λͺ¨ν 16
4.1 μ΄μ°¨κ³νλ²μ μ΄μ©ν λ‘λ²μ€νΈ μ λ°μ΄νμΌμ κ³νλͺ¨ν [ROQ λͺ¨ν] 16
4.2 μμ‘, μ μ , λ°°λΆ λ€νΈμν¬ 18
4.3 νν΄μ©μ κ³μ½ (Voyage Charter)μ κ³Όμ 20
4.4 μ μ‘°μ μ μμ₯μ§ν 22
5. κ³μ°μ€ν 25
5.1 [SPK λͺ¨ν]μ μν κ³μ° κ²°κ³Ό 25
5.2 [ROQ λͺ¨ν]μ μν κ³μ° κ²°κ³Ό 31
6. κ²°κ³Ό λ° κ²ν 37
κ°μ¬μ κΈ 39
μ°Έκ³ λ¬Έν 4
Low Temperature Processing using Pulsed Laser for Electronic Oxide-Based Device
MasterTraditionally, Thermal treatment is necessary to control of material properties in metal oxides due to the ability such as control of stoichiometry, phase transformation and improvement in purity. However, this process has some problems such as long processing time, energy loss. In addition, thermal process is incompatible with thermally sensitive substrates such as amorphous alloys, polymers and glass. Here in, we introduce the low temperature laser process for oxide-based device instead of thermal process.
The first topic is control of stoichiometry and crystallization about NbOx. ALD growth Niobium oxide (NbO2) thin films have been fabricated by pulsed-laser, which open the possibility to applicate NbO2 metal-insulator transition (MIT) in microelectronics since ALD system has advantages at constructing uniform, conformal, and ultrathin films with atomic level accuracy. Pulsed laser annealing under reducing environment enables crystallization and phase transition by inducing oxygen vacancies in ALD deposited Nb2O5 films. The two-terminal devices based on NbO2 made by laser treatment exhibit reliable and reversible threshold switch with high ION/IOFF ratio and low IOFF. Phase transition of ALD deposited multivalent metal oxide using pulsed laser can develop of ALD grown oxide-based threshold switches for advanced electronic device.
The second theme is about fabrication of c-axis aligned crystal indium gallium zinc oxide (CAAC-IGZO) films at room temperature by pulsed laser. A range of laser condition for CAAC-IGZO structure were studied. The XRD peak of CAAC (0012) near 33 Β° is observed. The as-deposited a-IGZO TFTs exhibited an on/off ratio of 1.15Γ10^3 and a subthreshold swing of 2.61 Vdecade^-1. For laser annealed device, a high on/off ratio of 8.6Γ10^6 and a subthreshold swing of 0.32 Vdecade^-1. These results occur a development of IGZO TFTs using pulsed laser process
λ―Έκ°μ κ²½νμ μ¬νμ ν¨μ
νμλ
Όλ¬Έ (μμ¬)-- μμΈλνκ΅ λνμ : λ―Ένκ³Ό, 2014. 2. κΉμ§μ½.λ³Έ λ
Όλ¬Έμ νλ μ¬νμμ λ―Έκ°μ κ²½νμ΄ κ°λ μ¬νμ ν¨μλ₯Ό νꡬνλ€. μ΄λ₯Ό μν΄ λ―Έκ°μ κ²½νμ κ΄ν λΆλ₯΄λμΈμ μ¬ννμ λΉνμ κ²½μ ν΄, κ·Έ νκ³λ₯Ό λ
Όλ°νκ³ λ―Έκ°μ κ²½νμ μ 볡μ κ°λ₯μ±μ μμ€νλ λμμλ₯΄μ κ°μ±λ‘ μ κ³ μ°°ν¨μΌλ‘μ¨ λ―Έκ°μ κ²½νμ λ΄μ¬νλ νλ±κ³Ό ν΄λ°©μ ν¨μλ₯Ό μ‘°λͺ
νκ³ μ νλ€.
μ€λλ λ―Έκ°μ κ²½νμ μμμ§λ ν κ°μ§ μ¬νμ νμλ κ·Έκ²μ΄ κ°μΈμ μ¬νμ κ³κΈμ μλ°ν μ§ν μν μ νκ³ μλ€λ μ μΌ κ²μ΄λ€. νλ μ¬ννμ λΆλ₯΄λμΈλ κ°μΈμ λ―Έκ°μ κ²½νκ³Ό μ¬νμ κ³κΈ 쑰건 κ° μκ΄κ΄κ³μ λν μ€μ¦μ μ°κ΅¬λ₯Ό ν΅ν΄, μΉΈνΈμ μ ν΅μ λ―Έν μ΄λ‘ μμ μ£Όμ₯λ 무κ΄μ¬μ μ·¨λ―Ένλ¨μ 보νΈμ±μ λ°λ°ν λ° μλ€. λΆλ₯΄λμΈμ λ°λ₯΄λ©΄ μμ λ―Έν λ΄λ‘ μ νΉμν μμ¬ μ¬νμ 쑰건μ μ°λ¬Όμ μ§λμ§ μλ 무κ΄μ¬μ μ·¨λ―Ένλ¨μ μΈκ° 보νΈμ μΈ κ²μΌλ‘ κ°μ£Όν΄ μ·¨λ―Έμ μκ³λ₯Ό μ‘°μ₯νλ€. μ΄λ μ·¨λ―Έμ μκ³μ μμνλ μ μ μ μκ³λ₯Ό μ¬λλ€μκ² λ΄λ©΄ννκ³ , λ€μ κ·Έμ λ°λ₯Έ μ¬νμ μ°¨λ³κ³Ό κ³κΈμ μ¬μμ°μ μ λΉννλ κ²°κ³Όλ₯Ό λ³λλ€.
κ·Έλ¬λ λΆλ₯΄λμΈμ κ΄μ μ μμ μ λ¬Έμ μμμλ λΆκ΅¬νκ³ κ³κΈμ λΆλ¦¬ λ° κ³ μ°©μ κΈ°μ¬νλ€λ λμΌν λΉν μμ μ·¨μ½νλ€. μ¬νμ μ€μ‘΄ 쑰건μ λ°λΌ κ°μΈμ μ€μ²μ κ°κ° λμμ΄ νμ±λκ³ , λ€μ κ·Έλ‘λΆν° μ°μΆλ κ°μΈμ μ¬μ μ νλμ μν΄ μ¬ν μ§μκ° μ¬κ΅¬μΆλλ€λ λ«ν μνμ ꡬ쑰μμμ λ³νμ κ³κΈ°λ₯Ό μ€λͺ
ν΄λ΄κΈ° μ΄λ ΅κΈ° λλ¬Έμ΄λ€.
μ΄μ λμλ μ² νμ λμμλ₯΄λ λΆλ₯΄λμΈκ° λΉννλ μΉΈνΈμ μ¬μ μ μ€κ±°ν΄ λ―Έκ°μ κ²½νμ μ μ¬μ μλμ κ³ μ°°ν¨μΌλ‘μ¨ λΆλ₯΄λμΈμ λΉνμ λμ΄μκ³ μ νλ€. λμμλ₯΄κ° μμ μ μ¬μ κ·Όκ°μ λκ³ μλ μΈκ°μ κ·Όμμ μΈ μ§μ νλ± κ°λ
μ μΉΈνΈμκ²μμ μ νμ μΈμλ₯λ ₯μ 보νΈμ±κ³Ό μΉμ°μ±μ κ°λλ€. λμμλ₯΄λ μ΄ μ§μ νλ±μ μ μ λ₯Ό μΈκ°μ μν΅κ³Ό μ¬ν μ§μμ μ±λ¦½ κ°λ₯μ±μ μν΄ μ μ λμ΄μΌ νλ μ κ°μ ν λλ‘μ μμ€νλ€. κ·Έλ μΈκ°μ νλ±μ λͺ©νκ° μλ μ μ λ‘ λ μΌλ‘μ¨, 주체μ μμ λ‘μ΄ μλ λ°νλ₯Ό μν λλ ₯μΌλ‘ μΌλλ€.
μ΄ μ μμ λ―Έκ°μ κ²½νμ νλ±μ μκ°νλ κ³κΈ°μ΄μ νλ±μ μ
μ¦νλ 무λκ° λλ€. λμμλ₯΄λ μ¬νμ μ§μκ° μΈκ³μ λν κ°κ°μΌλ‘ μ£Όμ΄μ§λ κ²μ μ£Όλͺ©ν΄ μ μΉμ κ°μ±μ λ¬Έμ λ₯Ό μ°κ²°νλ€. κ·Έλ μΉΈνΈμ μ΄λ¬μ λ―Ένμμ λ―Έκ°μ κ²½νμ κ³ μ ν νΉμ§μΌλ‘ λΆμλλ μ΄μ€μ μ€μ§λ‘λΆν°, 주체λ₯Ό λΉλ‘―ν νμλ€μ κ·μ μ§λ μ’
λμ κ΄κ³λ€λ‘λΆν°μ λΆλ¦¬μ κ³κΈ°λ₯Ό μ½μ΄λΈλ€. μ΄ κ°μμ λΆλ¦¬μ κ²½νμΌλ‘λΆν° 주체λ κΈ°μ‘΄ μ§μμ μ°μ°μ±μ κΉ¨λ«κ³ , νλ±μ μ μ μ μ
κ°ν΄ μλ‘μ΄ κ°κ°μ μ§μλ₯Ό ꡬμ±ν μ μλ€. κ·Έλ¦¬κ³ μ΄κ²μ μ£Όμ΄μ§ μ§μμ λ§μΈμ°λ λΆνμ 무λνλ₯Ό ν΅ν΄ μΈκ³μ λν κ°κ°μ μ§μμ΄ λ³νλ μ μλ€.
μ΄μ²λΌ λμμλ₯΄λ λ―Έκ°μ κ²½νμ 보νΈμ±κ³Ό κ°μμ±μ νλ±μ μ μ μ ν΄λ°©μ κ³κΈ°λ‘ μ¬ν΄μν¨μΌλ‘μ¨, λ―Έκ°μ κ²½νμ κ΄ν μ΄μμ λ
Όμλ₯Ό κ²½νμ μ°¨μμμ κΈμ μ μΌλ‘ μ¬μ μ νλ€. μ΄λ‘λΆν° 주체λ μνΈ νλ±μ μμμ μ
κ°ν μν΅μμ μμ§λ₯Ό κ³ μ·¨νκ³ , μλ‘μ΄ κ°κ° μ§μμ λ°λͺ
μ ν΅ν μΈκ³μμ κ°μ
μ λͺ¨μν μ μλ€. μ΄κ²μ μ£Όμ²΄λ‘ νμ¬κΈ μμ μ ꡬ쑰μ§λ μ¬νμ μ€μ‘΄ 쑰건μ λμΈμνμ§ μμΌλ©΄μλ κ·Έμ κ°νμ§ μκ³ , μμ μ΄ μ μ¬ν λ΄ μ리μ νλ±μ 무λλ₯Ό κ°λ‘μ§λ₯΄λ μ λ§λ€μ μ€μ²μ μ¬μ νκ³ νλνλλ‘ μ΄λλ€λ μμλ₯Ό κ°λλ€.μλ‘
1μ₯. μλΉμ μ΄ν΄ : μΉΈνΈμ μΈμλ‘ κ³Ό μ·¨λ―Ένλ¨λ‘
1) μ΄μμ μΈμλ‘
2) μ·¨λ―Ένλ¨μ λΆμκ³Ό μ°μ
2μ₯. λ¬Έμ μμμ λ°°κ²½ : λΆλ₯΄λμΈμ ꡬλ³μ§κΈ°λ‘
1) 무κ΄μ¬μ μμ μ μμ¬ μ¬νμ 쑰건
2) μ€μ¬λ₯Ό ꡬμ±νλ μ§μμΌλ‘μμ μ·¨λ―Έ
3) λΆλ₯΄λμΈμ ν보νΈμ κ΄μ μ νκ³
3μ₯. λμμλ₯΄ κ°μ±λ‘ μ κΈ°λ° : μ μ λ‘μμ νλ±
1) μ§μ λ₯λ ₯μ 보νΈμ±
2) λ‘κ³ μ€μ 곡ν΅μ±
4μ₯. λμμλ₯΄ κ°μ±λ‘ μ μ κ° : λ―Έκ°μ κ²½νμ ν΅ν νλ± μ
μ¦
1) βesthΓ©tiqueβμ μ΄μ€μ μλ―Έ
2) μ΄μ€μ μ€μ§
3) λΆνμ 무λν
5μ₯ λμμλ₯΄ κ°μ±λ‘ μ μμ
1) μΈμ΄λ‘μμ κ°κ°
2) μν΅μμ μμ§
κ²°λ‘ Maste