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No full text在可商业获得的N型6H-SiC晶片上,通过化学气相淀积,进行同质外延生长,在此结构材料上,通过热蒸发,制作Ni/6H-SiC肖特基势垒二极管。测量并分析了肖特基二极管的电学特性,结果表明,肖特基二极管具有较好的整流特
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No full text报道了用LP-MOVPE技术在蓝宝石(α-Al_2O_3)衬底上生长出以双掺Zn和Si的InGaN为有源区的绿光InGaN/AlGaN双异质结结构,并研制成功发射波长为520-540nm的绿光LED