ECRプラズマ ニ ヨル a-Si : Hマク ノ コウソクセイマクヨウ ハンノウソウチ ト セイセイマク ノ セキガイキュウシュウ スペクトラム ノ カンイテイリョウ ブンセキホウ

A novel microwave plasma reactor for high rate deposition of a-Si : H films is described with a special attention paid on decreasing plasma maintenance power. The reactor is a coaxial-line type composed of stainless inner conductor and mesh outer conductor covering a quartz tube. Secondary electron emission and ECR effects decrease drastically the plasma maintenance power. Furthermore simple quantitative analysis of infrared absorption spectra of the a-Si : H films is presented also. This is basically the deconvolution of the spectra to two Gaussian functions, using least sqare method, but it contains analytic solutions, in part, to decrease CPU time

テイコウシエネルギー オヨビ テイコウデンリュウ ニオケル ハンドウタイハクマク ノ CPMトクセイ ソクテイソウチ

A constant photocurrent method (CPM) system is developed for characterization of narrow-gap semiconductor films such as hydrogenated amorphous germanium (a-Ge : H), in which optical absorption spectra extend to low photon energy and photocurrent is significantly low in S/N (signal to noise ratio). Sufficient care is taken to enhance light intensity at the low photon energy in an optical system. The whole system is controlled by a personal computer to detect the low photocurrent using large time-constant integration. An empirical relation between lamp voltage and photocurrent at a fixed wavelength is adopted to reduce a measuring time. It is claimed that a photoresponse of pyroelectric detector should be flat in wavelength in order to obtain accurate CPM spectra. Preliminary results for a-Ge : H are also described

リサンテキ ナ ウェーブレット ヘンカンヨウ ノ クウカンフィルタ : D2/D4/D8/D16 ニヨル ディジタルガゾウアッシュク ト サイセイガゾウ ノ テイリョウテキ ナ ヒョウカ

A main characteristic of the DWT (Discrete Wavelet Transform) is to provide an intuitive and visual presentation of digital signals or image from the viewpoint of time-frequency or spatial space-scale relation, respectively In this study, four differnt types of spatial filters : D2/D4/D8/D16 proposed by Daubechies are used for the DWT and IDWT The visual deterioration of reconstructed gray level images and compression effect caused by deleting part of the orthgonal transform coefficients are discussed in connection with the quantitative evaluation of the reconstructed images : RMS

コクバンショウメイ ト シリョク

This report discusses the visual acuity to color of chalk under the various illuminance. At N0.612 class room, some Landolt\u27s circles colored by chalk were observed by several students to rank the visual acuity changing the illuminance on chalkboard from 50 lx to 500 lx. As a result almost students could show their ability of visual acuity 1.0 under illuminance over 170 lx on chalkboard. Also discriminating the illustration drawn by red or blue chalk was more difficult than by white or yellow one

チタンサファイアリングレーザ ニヨル I_2ブンシ ノ A^3Π_<1u>←X^1Σ^+_gヘンイ ノ コウブウンカイノウレーザブンコウ

The Doppler-limited absorption spectrum of the vib-rotational lines in the A^3II_←X^1Σ^+_g system of I_2 was measured in the region from 11650 to 12300 cm^ using a Ti : sapphire ring laser. The Q-branch lines of J=10 to 100 belonging to the v\u27←v"=29\u27～31\u27←O", 21"～30\u27←1" and 22\u27～31\u27←2" Progressions having no hyperfine splittings were assigned, and the values of ν^0_Q, B\u27_-B"_v, D7_-D"_v and H\u27_v-H"_v, were determined using a least squares fitting procedure. The calculated line positions of the Q-branches agreed with those observed within the accuracies of the wave-number measurements of 0.005 cm^. By using the Dunham expansion parameters of the X-state reported by Tromp and Le Roy, the spectroscopic constants of T\u27_v, B\u27_, D\u27_ and H\u27_ suitable for v\u27=21\u27～31\u27 in the A-state were calculated by a global least squares fitting procedure

ファブリペロカンショウケイ オ モチイテ ドウジアンテイカ シタ GaAsハンドウタイ レーザ ノ シュウハスウ オヨビ シュツリョク ノ オウトウトクセイ

周波数を安定化する帰還回路を注入電流源に,出力レベルを安定化する帰還回路を温度制御装置に接続し,GaAs半導体レーザの出力と周波数の同時安定化を行なった.出力や周波数のステップ応答を調べ,システムを二次系で近似し,減衰率を見積った.±0.5mWの範囲で出力を変化させた時の周波数シフトは±1.2MHz,1GHzの周波数掃引に対する出力レベルの変化は0.4μW以下である.出力制御回路の利得と,積分器の時定数を調整し,減衰率0.19,整定時間10sの動作条件を定めることができた.The simultaneous stabilization of the frequency and output power of a GaAs semiconductor laser has been done by using two kinds of feedback loops, i. e., one is connected to the injection current source for the frequency stabilization and the other to the temperature controller for the power level control. An approximate formula to estimate the effective damping factor similar to that obtained by a second order system is given. The frequency shift to the power level control of ±0.5 mW was ±1.2 MHz. The power level change to the frequency tuning of 1 GHz was O.4 μW. The settling time of 10 s at an effective damping factor of 0.19 was obtained by adjusting the time constant and the loop gain of the feedback loop for the power level eontrol

コウユウデンリツ セラミックス オ モチイタ TEMケツゴウブンプセンロケイ 2バンドデュープレクサ ノ テイアン ト セッケイリロン ： トクニブンプ リアクティプケツゴウ ニヨル ガイブQチ

最近移動体通信における携帯電話は、800MHz帯と1.5GHz帯の2バンドが用いられており、これらに対応した端末器が別々に作られているが、将来は低コストにするために2バンドを1機種で対応できる機器の開発が望まれている。ここではその一環として2バンドデュープレクサの開発に必要な分布回路の研究を行った。従来のデュープレクサでは2ヶの帯域通路フィルター(Band Pass Filter)を集中定数回路や、分布定数線路を用いて分波していたが、形状が大きくなるうえに、2ヶの周波数が夫々f_1及びf_2=2f_1の如く離れている場合には回路構成が複雑となる。そこで今回は高誘電率セラミックスのブロック中に形成されたTEM平行三線路を用いた分波回路を提案し、その設計理論と実験結果との照合を行ったものである。とくに2バンドに対する分布定数線路の長さは異なり、これらの結合に於いては、従来のインターディジタル結合の場合と異り、分布リアクティブ結合が行われる。この結合理論は従来無く、今回筆者により求められこれに基づいてフィルタの外部Q値を求めて実験結果とよく一致する結果を得たものである。Duplexers are usually used between the antenna and the equipments such as the transmitter and the receiver to separate their signals. In the portable movable communications, however, the frequency bands exist in arround about 0.9 and 1.8GHz. The co_used equipments available to the dual band will be demmanded to make low cost in future. This paper, therefore, presents the proposed dual band duplexers and the theory of the design to meet the requirement mentioned above, where the several types with multicoupled TEM lines in high dielectric material are proposed.In the proposed constructions, there are not only the interdigital coupling and lumped element coupling used in the past but also the newly proposed distributed reactive coupling for the duplexing function. This paper, therefore, is especially focused on the design theory of the distributed reactive coupling in connection with the newly proposed construction, and shows the good agreements with experimental results. The techniques and the theory will be available to not only such a devices mentioned above, but also other microwave circuits in general

トッド カラープリンタ ノ イロサイゲン ノ ケントウ

Reroduced color of the dot printer on the market was discussed about seven test color samples : cyan, magenta, yellow, red, green, blue and black. The color step consisted of picture elements from one dot to sixteen dots (full color) was nonlinear and the more the number of dot was the smaller the interval of color step was. To realized linear color interval, the method of printing the dot must be devised

ラジオハ マイクロハ ニジュウキョウメイ ブンコウホウ ヲ モチイタ クロロアセトニトリル ノ エンシンリョクヒズミテイスウ ノ カイセキ

he technique of the radio frequency-microwave double resonance spectroscopy has been applied in the analysis of the comolex high J rotational spectrum of an asymmetric rotor modifying the modulation system of a conventional Stark modulation microwave spectrometer. The a-type Q-branch transitions of CH_2CICN have been pumped by the highpower radio frequency field applied to the Stark septum, and the 22 P-branch lines of the b-type up to 48_8←49_7 transition have been assigned in the frequency regrion from 28 to 43 GHz. The rotational constants and the centrifugal distortion constants of the ^Cl species in the ground vibrational state have been determined by the least squares fitting procedure

パルスガタ ハンドウタイ レーザ ノ ブンコウトクセイ ソクテイソウチ

A detection system has been made for measuring Power emission spectrum of a pulsed diode laser. The system made is simple and lowcost compared with a method of gated photon counting or that of using a Boxcar integrator, and can be produced without difficulty by using commercial electronic devices. As the fluctuation of the emission power is averaged using the RC integrator connected with the gate circuit, the emission spectrum of the pulsed laser can be measured in a good signal-to-noise ratio even if in the condition close to the limiting resolving power of the grating spectrometer. By this system with a PIN photodiode detector the longitudinal mode of the pulsed GaAlAs diode laser has been clearly resolved in the near infrared region