This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 107, 191111 (2015) and may be found at https://doi.org/10.1063/1.4935796.This work reports on non-degenerate four-wave mixing under dual-mode injection in metalorganic vapor phase epitaxy grown InP/InAs quantum-dash and quantum dot Fabry-Perot laser operating at 1550 nm. High values of normalized conversion efficiency of −18.6 dB, optical signal-to-noise ratio of 37 dB, and third order optical susceptibility normalized to material gain χ(3)/g0 of ∼4 × 10−19 m3/V3 are measured for 1490 μm long quantum-dash lasers. These values are similar to those obtained with distributed-feedback lasers and semiconductor optical amplifiers, which are much more complicated to fabricate. On the other hand, due to the faster gain saturation and enhanced modulation of carrier populations, quantum-dot lasers demonstrate 12 dB lower conversion efficiency and 4 times lower χ(3)/g0 compared to quantum dash lasers.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, BauelementeEC/FP7/EU/264687/Postgraduate Research on Photonics as an Enabling Technology/PROPHE
